Image sensor
The present description describes an image sensor including an array of pixels arranged inside and on top of a region of a semiconductor substrate electrically insulated from the rest of the substrate by insulating trenches crossing the substrate, each pixel including a photoconversion area and at least two assemblies, each including a memory area and a transfer gate coupling the memory area to the photoconversion area, and a circuit configured to apply, for each pixel and at least during each integration phase, a bias voltage different from ground to a portion of the substrate having the pixel arranged inside and on top of it.
1. An image sensor comprising:
an array of pixels arranged inside and on top of a region of a semiconductor substrate electrically insulated from a remainder of the substrate by insulating trenches crossing the substrate, wherein each pixel comprises a photoconversion area and at least two assemblies, wherein each assembly comprises a memory area and a transfer gate coupling the memory area to the photoconversion area; and
a first circuit configured to apply, for each pixel and at least during each integration phase, a first bias voltage different from a ground potential to a portion of the substrate having the pixel arranged inside and on top of it, wherein the first bias voltage is a positive voltage.
2. The image sensor of claim 1 , wherein, for each assembly of each pixel, the transfer gate of the assembly is blocked when the first bias voltage is applied to the portion of the substrate having the pixel arranged inside and on top of it and the ground potential is applied to the transfer gate.
3. The image sensor of claim 1 , wherein at least a portion of the remainder of the substrate is configured to be biased to the ground potential.
4. The image sensor of claim 1 , wherein each pixel comprises at least one detection node connected to a first electrode of a capacitive element, and a second electrode of the capacitive element is connected to the ground potential.
5. The image sensor of claim 4 , wherein the capacitive element is a metal-insulator-metal capacitive element.
6. The image sensor of claim 1 , wherein the first circuit is configured to control, for each transfer gate of each assembly of each pixel, a setting to a conductive state of the transfer gate by applying a control potential to the transfer gate, and a setting to a blocked state of the transfer gate by applying the ground potential to the transfer gate.
7. The image sensor of claim 6 , comprising a switched-mode power supply configured to deliver the control potential.
8. The image sensor of claim 7 , wherein the switched-mode power supply is implemented outside of the substrate.
9. The image sensor of claim 1 , wherein the first circuit is configured, for each pixel, to apply the first bias voltage to the portion of the substrate having the pixel arranged inside and on top of it all along a duration of operation of the sensor.
10. The image sensor of claim 1 , comprising a second circuit configured to receive a power supply voltage and to generate the first bias voltage from the power supply voltage.
11. The image sensor of claim 10 , wherein the second circuit comprises a class AB low dropout regulator configured to deliver the first bias voltage.
12. The image sensor of claim 1 , wherein the first circuit is configured, for each pixel, to apply a second bias voltage to the portion of the substrate having the pixel arranged inside and on top of it during each readout phase of the pixel.
13. The image sensor of claim 12 , wherein, for each assembly of each pixel, each transfer gate of the assembly is blocked when the second bias voltage is applied to the portion of the substrate having the pixel arranged inside and on top of it and the ground potential is applied to the transfer gate.
14. The image sensor of claim 12 , comprising a second circuit configured to receive a power supply voltage and to generate, from the power supply voltage, the first bias voltage and the second bias voltage.
15. The image sensor of claim 14 , wherein the second circuit comprises at least one class AB low dropout, LDO, regulator, configured to deliver the first bias voltage and the second bias voltage.
16. The image sensor of claim 1 , wherein each transfer gate of each assembly of each pixel has a buried channel.
17. The image sensor of claim 1 , wherein the sensor is of indirect time of flight type.
18. An image sensor comprising:
an array of pixels arranged inside and on top of a region of a first substrate electrically insulated from a remainder of the first substrate by insulating trenches crossing the first substrate, wherein each pixel comprises a photoconversion area and at least two assemblies, wherein each assembly comprises a memory area and a transfer gate coupling the memory area to the photoconversion area;
a readout circuit, configured to selectively receive, during each readout phase, output signals from each row of the array of pixels;
a second circuit, configured to generate, from a power supply voltage, a first bias voltage different from a ground potential, the second circuit being inside and on top of a second substrate, the second substrate being stacked on the first substrate; and
a first circuit, configured to apply, for each pixel and during each integration phase, the first bias voltage to a portion of the first substrate having the pixel arranged inside and on top of it.
19. The image sensor of claim 18 , further comprising:
a switched-mode power supply configured deliver a control potential to the first circuit, wherein the first circuit is configured to use the control potential and the ground potential to control a state of each transfer gate; and
a voltage regulator configured to provide the power supply voltage to the second circuit.
20. The image sensor of claim 18 , wherein, for each assembly of each pixel, the transfer gate of the assembly is blocked when the first bias voltage is applied to the portion of the first substrate having the pixel arranged inside and on top of it and the ground potential is applied to the transfer gate.
21. An image sensor comprising:
an array of pixels arranged inside and on top of a region of a semiconductor substrate electrically insulated from a remainder of the substrate by insulating trenches crossing the substrate, wherein each pixel comprises a photoconversion area and at least two assemblies, wherein each assembly comprises a memory area and a transfer gate coupling the memory area to the photoconversion area;
a first circuit configured to apply, for each pixel and at least during each integration phase, a first bias voltage different from a ground potential to a portion of the substrate having the pixel arranged inside and on top of it, the first bias voltage being in a range of 0.1 V to 1.5 V; and
a second circuit, configured to generate, from a power supply voltage, the first bias voltage.