IP Library Granted Patent US 11,892,775
Granted Patent B2
US 11,892,775 · App. 17/676,235 · Granted Feb 6, 2024

Storage container storing treatment liquid for manufacturing semiconductor

Inventors: Tetsuya Shimizu (Shizuoka, JP); Tetsuya Kamimura (Shizuoka, JP)
Assignee: FUJIFILM Corporation
G03F7/32B65D25/14B65D85/00B65D85/70G03F7/16G03F7/30G03F7/322G03F7/325G03F7/40H01L21/0271H01L21/0274H01L21/308
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Quick Facts
Patent No.
US 11,892,775
App. No.
17/676,235
Granted
Feb 6, 2024
Kind
B2
Abstract

A storage container storing a treatment liquid for manufacturing a semiconductor is provided, wherein the occurrence of defects on the semiconductor, such as particles, is suppressed and a fine resist pattern or a fine semiconductor element is manufactured. The storage container includes a storage portion that stores the treatment liquid, wherein the treatment liquid includes one kind or two or more kinds of metal atoms selected from Cu, Fe, and Zn, and a total content of particulate metal that is a metal component derived from the metal atoms and that is a nonionic metal component present in the treatment liquid as a solid without being dissolved is 0.01 to 100 mass ppt with respect to a total mass of the treatment liquid.

Claims (47)

1. A storage container comprising:

a treatment liquid for manufacturing a semiconductor; and

a storage portion that stores the treatment liquid,

wherein the treatment liquid includes one kind or two or more kinds of metal atoms selected from Cu, Fe, and Zn, and

a total content of particulate metal that is a metal component derived from the metal atoms and that is a nonionic metal component present in the treatment liquid as a solid without being dissolved is 0.01 to 100 mass ppt with respect to a total mass of the treatment liquid for manufacturing the semiconductor,

wherein a mass of the particulate metal is measured by a SP-ICP-MS method.

2. The storage container according to claim 1 ,

wherein an inner wall of the storage portion that comes into contact with the treatment liquid is cleaned using a cleaning liquid having a contact angle of 10 degrees to 120 degrees on the inner wall before being filled with the treatment liquid.

3. The storage container according to claim 2 ,

wherein the cleaning liquid is ultrapure water or a liquid including at least one of components included in the treatment liquid.

4. The storage container according to claim 1 ,

wherein at least a portion of an inner wall of the storage portion that comes into contact with the treatment liquid is formed of a material including at least one selected from the group consisting of polyethylene, polypropylene, polytetrafluoroethylene, and perfluoroalkoxy alkane.

5. The storage container according to claim 1 ,

wherein at least a portion of an inner wall of the storage portion that comes into contact with the treatment liquid is formed of a material including at least one selected from the group consisting of stainless steel and nickel-chromium alloy.

6. The storage container according to claim 1 ,

wherein at least a portion of an inner wall of the storage portion that comes into contact with the treatment liquid is formed of a material including at least one selected from the group consisting of stainless steel and nickel-chromium alloy, and

a mass ratio represented by Cr/Fe in a portion having a depth of 1 nm from an outermost surface of the inner wall is 1 to 3.

7. The storage container according to claim 1 ,

wherein an occupancy ratio of a void portion in the storage portion storing the treatment liquid is 50 to 0.01 vol %.

8. The storage container according to claim 1 ,

wherein a void portion of the storage portion storing the treatment liquid is filled with gas in which the number of particles having a diameter of 0.5 μm or more is 10 particles/L or less.

9. The storage container according to claim 1 ,

wherein a void portion of the storage portion storing the treatment liquid is filled with inert gas, wherein the inert gas comprising nitrogen or argon.

10. The storage container according to claim 1 ,

wherein the treatment liquid is a developer or a rinsing liquid.

11. The storage container according to claim 1 ,

wherein the treatment liquid includes a quaternary ammonium salt.

12. The storage container according to claim 1 ,

wherein the treatment liquid includes at least one selected from the group consisting of butyl acetate, N-methyl-2-pyrrolidone, isopropanol, ethanol, and methyl isobutyl carbinol.

13. The storage container according to claim 1 ,

wherein the pH of the treatment liquid is 10.0 to 15.0.

14. The storage container according to claim 1 ,

wherein the treatment liquid includes a surfactant.

15. The storage container according to claim 1 ,

wherein the treatment liquid includes at least one selected from the group consisting of butyl acetate, N-methyl-2-pyrrolidone, isopropanol, ethanol, methyl isobutyl carbinol, propylene glycol monomethyl ether, cyclohexanone, γ-butyrolactone, ethyl lactate, dimethyl sulfoxide, isoamyl acetate, a mixed solution of propylene glycol monomethyl ether acetate and propylene glycol monomethyl ether, methyl 2-hydroxyisobutyrate, methyl ethyl ketone, and propylene carbonate.

16. The storage container according to claim 1 ,

wherein the treatment liquid includes at least one selected from the group consisting of butyl acetate, methyl isobutyl carbinol and isoamyl acetate.

17. The storage container according to claim 1 ,

wherein the treatment liquid includes at least one selected from the group consisting of propylene glycol monomethyl ether, cyclohexanone, ethyl lactate, a mixed solution of propylene glycol monomethyl ether acetate and propylene glycol monomethyl ether, and methyl 2-hydroxyisobutyrate.

18. The storage container according to claim 1 ,

wherein the treatment liquid includes at least isopropanol.

19. A storage container comprising:

a treatment liquid for manufacturing a semiconductor; and

a storage portion that stores the treatment liquid,

wherein the treatment liquid includes one kind or two or more kinds of metal atoms selected from Cu, Fe, and Zn, and

a total content of particulate metal that is a metal component derived from the metal atoms and that is a nonionic metal component present in the treatment liquid as a solid without being dissolved is 0.01 to 100 mass ppt with respect to a total mass of the treatment liquid for manufacturing the semiconductor,

wherein an inner wall of the storage portion that comes into contact with the treatment liquid is cleaned using a cleaning liquid having a contact angle of 10 degrees to 120 degrees on the inner wall before being filled with the treatment liquid.

Priority Claims (2)
JP 2016-073257 · Mar 31, 2016 · national
JP 2017-045864 · Mar 10, 2017 · national
Continuity (3)
Continuation 16143497 · Sep 27, 2018
Continuation PCTJP2017010618 · Mar 16, 2017
Related Publication 20220179320A1 · Jun 9, 2022