IP Library Granted Patent US 12,389,721
Granted Patent B2
US 12,389,721 · App. 17/677,064 · Granted Aug 12, 2025

Luminescent nanostructure, production method thereof, and light emitting device including the same

Inventors: Sang Soo Jee (Hwaseong-si, KR); Shang Hyeun Park (Yongin-si, KR); Shin Ae Jun (Seongnam-si, KR)
Assignee: SAMSUNG ELECTRONICS CO., LTD.
H10H20/84C09K11/025H10H20/01335B82Y20/00B82Y40/00H10H20/034H10H20/812H10H20/825
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Quick Facts
Patent No.
US 12,389,721
App. No.
17/677,064
Granted
Aug 12, 2025
Kind
B2
Abstract

A luminescent nanostructure, a production method for making the luminescent nanostructure, and an electronic device including the luminescent nanostructure. The luminescent nanostructure includes a semiconductor nanocrystal including a Group 13 metal nitride. The luminescent nanostructure has an aspect ratio of greater than or equal to about 1, and an organic compound having an M-O moiety, wherein M is Ti, Al, Zr, Sn, or Si that is bound to at least a portion of the surface of the luminescent nanostructure.

Claims (43)

1. A luminescent nanostructure, comprising

a semiconductor nanocrystal comprising a Group 13 metal nitride, wherein the luminescent nanostructure does not include cadmium, and

has an aspect ratio of greater than or equal to about 1, and

an organic compound having an M-O moiety, wherein M is Ti, Al, Zr, Sn, or Si, that is bound to at least a portion of a surface of the luminescent nanostructure,

wherein the luminescent nanostructure comprises a p-type doped first semiconductor material, a n-type doped second semiconductor material, and an active layer disposed between the first semiconductor material and the second semiconductor material.

2. The luminescent nanostructure of claim 1 , wherein the Group 13 metal nitride comprises gallium nitride, indium nitride, indium gallium nitride, aluminum nitride, aluminum gallium nitride, indium aluminum gallium nitride, or a combination thereof.

3. The luminescent nanostructure of claim 1 , wherein the active layer comprises a material having a quantum well structure.

4. The luminescent nanostructure of claim 1 , wherein

the luminescent nanostructure further comprises an insulating layer on an outer surface of the luminescent nanostructure, and

the insulating layer comprises a metal oxide.

5. The luminescent nanostructure of claim 4 , wherein the metal oxide comprises an aluminum oxide, a silicon oxide, or a combination thereof.

6. The luminescent nanostructure of claim 1 , wherein

the luminescent nanostructure has a longitudinally extended shape, and

a diameter of the luminescent nanostructure is greater than or equal to about 50 nanometers and less than or equal to about 1000 nanometers.

7. The luminescent nanostructure of claim 1 , wherein the aspect ratio is greater than or equal to about 3.

8. The luminescent nanostructure of claim 1 , wherein the organic compound comprises one or more repeating units *-L-O—*, wherein L is a substituted or unsubstituted C 1 to 10 alkylene group,

* is a site bound to an adjacent atom in the organic compound.

9. The luminescent nanostructure of claim 1 , wherein the organic compound comprises an organosilicon compound containing a Si—O—Si linkage.

10. The luminescent nanostructure of claim 1 , wherein the organic compound comprises a carboxylate moiety, a phosphite moiety, a sulfonate moiety, an amine moiety, a carboxylic acid, an alkylene glycol moiety, or a combination thereof.

11. The luminescent nanostructure of claim 1 , wherein the organic compound comprises a compound represented by Chemical Formula 1 or Chemical Formula 2:

wherein n is an integer from 1 to 3,

n1 is an integer from 1 to 10,

group A of Chemical Formulae 1 or 2 is the same or different, and each independently a hydroxyl group, a substituted or unsubstituted C1 to C10 alkoxy group, chlorine, —O*, wherein * represents a portion connected to the surface of the luminescent nanostructure, or a combination thereof, provided that at least one A is —O*, and

group R of Chemical Formulae 1 or 2 is the same or different, and each independently a C1 to C40 substituted or unsubstituted aliphatic hydrocarbon group, a C6 to C40 substituted or unsubstituted aromatic hydrocarbon group, a C1 to C40 substituted or unsubstituted aliphatic hydrocarbon group in which at least one methylene is replaced by sulfonyl (—SO 2 —), carbonyl (CO), ether (—O—), sulfide (—S—), sulfoxide (—SO—), ester (—C(═O)O—), amide (—C(═O) NR′—), wherein R′ is hydrogen or a C1 to C10 alkyl group, a moiety represented by Chemical Formula 1-1, or a combination thereof;

wherein, R 1 is hydrogen, a substituted or unsubstituted C1 to C30 alkyl ester moiety, a substituted or unsubstituted C1 to C10 alkoxy group, a hydroxy group, a carboxyl group, a (meth)acrylate group, an amine group, a maleimide group, a thiol group, or a C1 to C10 fluorinated alkoxy group,

L 1 is a substituted or unsubstituted C1 to C5 alkylene group or a substituted or unsubstituted C1 to C5 fluorinated alkyl group,

R 2 is a direct bond, a substituted or unsubstituted C1 to C20 alkylene group, sulfonyl (—SO 2 —), carbonyl (CO), ether (—O—), sulfide (—S—), sulfoxide (—SO—), ester (—C(═O)O—), amide (—C(═O)NR—, wherein R is hydrogen or a C1 to C10 alkyl group), or a combination thereof,

* represents a portion connected to a Si atom of Chemical Formulae 1 or 2, and

m is 1 to 40.

12. The luminescent nanostructure of claim 1 , wherein an amount of the organic compound in the luminescent nanostructure is greater than or equal to about 0.1 weight percent and less than or equal to about 10 weight percent, based on the total weight of the luminescent nanostructure.

13. The luminescent nanostructure of claim 1 , wherein the luminescent nanostructure is configured to emit blue light, green light, or a combination thereof.

14. A light emitting device comprising the luminescent nanostructure of claim 1 .

15. The light emitting device of claim 14 , further comprising a conductor electrically connected to the semiconductor nanocrystal of the luminescent nanostructure.

16. A display device comprising the light emitting device of claim 14 .

17. A method of producing the luminescent nanostructure of claim 1 , comprising

preparing a substrate comprising a plurality of the luminescent nanostructures, and positioning the substrate into a deposition chamber; and

vapor depositing the organic compound on surfaces of the plurality of luminescent nanostructures in the deposition chamber.

18. The method of claim 17 , wherein the plurality of the luminescent nanostructures are arranged on the substrate in such a manner that the luminescent nanostructures have one end bound to the surface of the substrate and extended in a direction away from the surface.

19. The method of claim 17 , wherein the vapor depositing of the organic compound is conducted at a temperature of greater than or equal to about 100° C. and less than or equal to about 500° C.

20. A method of producing the luminescent nanostructure of claim 1 , comprising:

providing a plurality of the luminescent nanostructures without the organic compound;

dispersing the luminescent nanostructures in an organic solvent including the organic compound to obtain a mixture; and

stirring the mixture at a temperature of greater than or equal to about 100° C.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 1, 2022
From: JEE, SANG SOO; PARK, SHANG HYEUN; JUN, SHIN AE
To: SAMSUNG ELECTRONICS CO., LTD.
Reel/Frame 059687/0390 →
Priority Claims (1)
KR 10-2021-0024429 · Feb 23, 2021 · national
Continuity (1)
Related Publication 20220278256A1 · Sep 1, 2022
References Cited (18)
US 8163633B2 · Korgel et al. · 2012 [cited by applicant]
US 8455284B2 · Seong et al. · 2013 [cited by applicant]
US 8920685B2 · Jang et al. · 2014 [cited by applicant]
US 9553234B2 · Cha et al. · 2017 [cited by applicant]
US 10988598B2 · Bai et al. · 2021 [cited by applicant]
US 20120068153A1 · Seong · 2012 [cited by examiner]
US 20130252363A1 · Seong et al. · 2013 [cited by applicant]
US 20160096927A1 · Jee · 2016 [cited by examiner]
US 20180112069A1 · Bai · 2018 [cited by examiner]
US 20180239247A1 · Kwon · 2018 [cited by examiner]
CN 111446325A · 2020 [cited by applicant]
KR 20110110669A · 2011 [cited by applicant]
KR 20120028103A · 2012 [cited by applicant]
KR 1660364B1 · 2016 [cited by applicant]
KR 20170133370A · 2017 [cited by applicant]
Covalent Surface Modification of Oxide Surf, Angew. Chem. Int. Ed. 2014, 53, 6322-6356. [cited by applicant]
English Translation of Office Action dated Jul. 13, 2023 of the corresponding Korean Patent Application No. 10-2021-0024429, 10 pp. [cited by applicant]
Office Action dated Jul. 13, 2023 of the corresponding Korean Patent Application No. 10-2021-0024429, 9 pp. [cited by applicant]