CLEANING SOLUTION AND CLEANING METHOD
There is provided a cleaning liquid for semiconductor substrates having undergone CMP, the cleaning liquid being excellent in storage stability. In addition, there is provided a method of cleaning semiconductor substrates having undergone CMP. The cleaning liquid for semiconductor substrates having undergone CMP shows alkaline properties and contains: an amine compound that is at least one selected from the group consisting of a primary amine, a secondary amine, a tertiary amine, and their salts; a chelating agent; and water. The amine compound content is not less than 25.5 mass % and less than 90 mass % based on the total mass of the cleaning liquid, and the water content is 10 to 60 mass % based on the total mass of the cleaning liquid.
1 . A cleaning liquid for semiconductor substrates having undergone a chemical mechanical polishing process,
wherein the cleaning liquid shows alkaline properties and comprising:
an amine compound that is at least one selected from the group consisting of a primary amine, a secondary amine, a tertiary amine, and their salts;
a chelating agent; and
water,
a content of the amine compound is not less than 25.5 mass % and less than 90 mass % based on a total mass of the cleaning liquid, and
a content of the water is 10 to 60 mass % based on the total mass of the cleaning liquid.
2 . The cleaning liquid according to claim 1 ,
wherein the cleaning liquid has a pH of 8.0 to 12.0 at 25° C.
3 . The cleaning liquid according to claim 1 ,
wherein a first acidity constant of a conjugated acid of the amine compound is not less than 7.0.
4 . The cleaning liquid according to claim 1 ,
wherein the amine compound contains an amino alcohol.
5 . The cleaning liquid according to claim 4 ,
wherein the amino alcohol has a primary amino group.
6 . The cleaning liquid according to claim 4 ,
wherein the cleaning liquid contains two or more amino alcohols.
7 . The cleaning liquid according to claim 4 ,
wherein the amino alcohol has a quaternary carbon atom situated at α position with respect to an amino group.
8 . The cleaning liquid according to claim 4 ,
wherein the amino alcohol is 2-amino-2-methyl-1-propanol.
9 . The cleaning liquid according to claim 1 ,
wherein the cleaning liquid further contains a quaternary ammonium compound.
10 . The cleaning liquid according to claim 9 ,
wherein the quaternary ammonium compound has an asymmetric structure.
11 . The cleaning liquid according to claim 1 ,
wherein the cleaning liquid further contains two or more quaternary ammonium compounds.
12 . The cleaning liquid according to claim 1 ,
wherein the cleaning liquid further contains a surfactant.
13 . The cleaning liquid according to claim 1 ,
wherein the cleaning liquid further contains two or more surfactants.
14 . The cleaning liquid according to claim 1 ,
wherein the cleaning liquid further contains a reducing agent.
15 . The cleaning liquid according to claim 1 ,
wherein the cleaning liquid further contains two or more reducing agents.
16 . The cleaning liquid according to claim 1 ,
wherein the chelating agent contains a sulfur-containing amino acid.
17 . The cleaning liquid according to claim 1 ,
wherein a content of the chelating agent is not more than 20 mass % based on the total mass of the cleaning liquid.
18 . The cleaning liquid according to claim 1 ,
wherein the cleaning liquid has no flash point.
19 . A method of cleaning semiconductor substrates, the method comprising a step of cleaning a semiconductor substrate having undergone a chemical mechanical polishing process by applying a diluted cleaning liquid to the semiconductor substrate, the diluted cleaning liquid being obtained by diluting the cleaning liquid according to claim 1 by 500 to 10000 times in mass ratio.