Microdisplay architecture with light extraction efficiency enhancement
A light source comprises a backplane wafer with electrical circuits fabricated thereon, and an array of LEDs coupled to the backplane wafer. Each LED of the array of LEDs comprises a mesa structure including semiconductor epitaxial layers and characterized by inwardly tilted mesa sidewalls, a high-refractive index material region (e.g., with a refractive index greater than about 1.75, such as equal to or greater than a refractive index of the semiconductor epitaxial layers) surrounding the semiconductor epitaxial layers of the mesa structure and including outwardly tilted sidewalls, and a reflective layer on the outwardly tilted sidewalls of the high-refractive index material region. In one example, each LED of the array of LEDs also include a passivation layer on the inwardly tilted mesa sidewalls of the mesa structure.
1. A light source comprising:
a backplane wafer including electrical circuits fabricated thereon; and
an array of light emitting diodes (LEDs) coupled to the backplane wafer, each LED of the array of LEDs comprising:
a mesa structure including semiconductor epitaxial layers and characterized by inwardly tilted mesa sidewalls;
a high-refractive index material region surrounding the mesa structure, the high-refractive index material region including outwardly tilted sidewalls and characterized by a refractive index greater than 1.75 for visible light; and
a reflective layer on the outwardly tilted sidewalls of the high-refractive index material region, wherein the high-refractive index material region fills an entire region between the mesa structure and the reflective layer.
2. The light source of claim 1 , wherein:
the mesa structure comprises a passivation layer at the inwardly tilted mesa sidewalls of the mesa structure;
the semiconductor epitaxial layers include an n-type semiconductor layer, an active layer configured to emit visible light, and a p-type semiconductor layer; and
the mesa structure further comprises:
a back reflector layer coupled to the semiconductor epitaxial layers; and
a bonding layer electrically connected to the back reflector layer and bonded to the backplane wafer.
3. The light source of claim 2 , wherein:
the back reflector layer is coupled to the p-type semiconductor layer; and
the array of LEDs includes a transparent conductive layer electrically coupled to the n-type semiconductor layer of the mesa structure of each LED of the array of LEDs.
4. The light source of claim 2 , wherein:
the back reflector layer is coupled to the n-type semiconductor layer; and
the array of LEDs includes a transparent conductive layer electrically coupled to the p-type semiconductor layer of the mesa structure of each LED of the array of LEDs.
5. The light source of claim 1 , wherein the reflective layer on the outwardly tilted sidewalls of the high-refractive index material region forms a compound parabolic concentrator.
6. The light source of claim 1 , wherein the high-refractive index material region is asymmetrical with respect to a center of the mesa structure.
7. The light source of claim 1 , further comprising an array of micro-lenses on the array of LEDs, wherein a width of each micro-lens of the array of micro-lenses is greater than a width of each LED of the array of LEDs.
8. The light source of claim 1 , further comprising dielectric material regions surrounding each LED of the array of LEDs, wherein the reflective layer is formed on surfaces of the dielectric material regions.
9. The light source of claim 8 , wherein at least a region of the dielectric material regions surrounding an LED of the array of LEDs is higher than the mesa structure of the LED.
10. The light source of claim 8 , wherein a portion of the reflective layer of an LED of the array of LEDs is higher than the mesa structure of the LED.
11. The light source of claim 1 , wherein the refractive index of the high-refractive index material region is equal to or greater than a refractive index of the semiconductor epitaxial layers.
12. The light source of claim 1 , wherein:
The semiconductor epitaxial layers include GaN; and
the high-refractive index material region includes TiO 2 , SiN, or an undoped semiconductor material.
13. A light source comprising:
a backplane wafer including electrical circuits fabricated thereon; and
an array of light emitting diodes (LEDs) coupled to the backplane wafer, each LED of the array of LEDs including:
a mesa structure including semiconductor epitaxial layers and characterized by inwardly tilted mesa sidewalls;
and
a reflective layer surrounding the semiconductor epitaxial layers of the mesa structure and including outwardly tilted inner sidewalls, wherein the reflective layer forms a compound parabolic concentrator that is configured to collimate light emitted from the mesa structure.
14. The light source of claim 13 , wherein the mesa structure includes a passivation layer at the inwardly tilted mesa sidewalls.
15. The light source of claim 13 , further comprising a high-refractive index material between the inwardly tilted mesa sidewalls and the reflective layer, the high-refractive index material characterized by a refractive index equal to or greater than a refractive index of the semiconductor epitaxial layers.
16. The light source of claim 13 , wherein the reflective layer surrounding the semiconductor epitaxial layers of the mesa structure is asymmetrical with respect to a center of the mesa structure.
17. The light source of claim 13 , wherein a portion of the reflective layer is higher than the mesa structure.
18. The light source of claim 13 , further comprising dielectric material regions surrounding each LED of the array of LEDs, wherein the reflective layer is on surfaces of the dielectric material regions.