High quantum efficiency Geiger-mode avalanche diodes including high sensitivity photon mixing structures and arrays thereof
A photodetector device includes a semiconductor material layer and at least one photodiode in the semiconductor material layer. The at least one photodiode is configured to be biased beyond a breakdown voltage thereof to generate respective electrical signals responsive to detection of incident photons. The respective electrical signals are independent of an optical power of the incident photons. A textured region is coupled to the semiconductor material layer and includes optical structures positioned to interact with the incident photons in the detection thereof by the at least one photodiode. Two or more photodiodes may define a pixel of the photodetector device, and the optical structures may be configured to direct the incident photons to any of the two or more photodiodes of the pixel.
1. An optical sensor array, comprising:
a plurality of pixels, a respective pixel of the plurality of pixels comprising two or more photodiodes that are configured to generate respective electrical signals responsive to incident photons when a reverse bias applied thereto is beyond a breakdown voltage thereof; and
respective isolation regions separating neighboring ones of the plurality of pixels.
2. The optical sensor array of claim 1 , wherein the two or more photodiodes comprise a first photodiode and a second photodiode adjacent a periphery of the first photodiode.
3. The optical sensor array of claim 2 , wherein the first and second photodiodes are concentrically arranged.
4. The optical sensor array of claim 3 , wherein the first photodiode has a polygonal shape, and the second photodiode provides a polygonal ring around the first photodiode.
5. The optical sensor array of claim 1 , wherein the two or more photodiodes comprise a first photodiode and a second photodiode that are vertically stacked.
6. The optical sensor array of claim 5 , wherein the first photodiode comprises a first semiconductive junction, and the second photodiode comprises a second semiconductive junction that is under the first semiconductive junction.
7. The optical sensor array of claim 6 , wherein the first photodiode is vertically stacked on the second photodiode via wafer-to-wafer bonding with electrical interconnection therebetween.
8. The optical sensor array of claim 1 , wherein the respective isolation regions comprise respective deep trench isolation (DTI) regions, and further comprising:
a shallower trench isolation (SrTI) structure between the two more photodiodes in the respective pixel, wherein the respective DTI regions protrude away from the two or more photodiodes beyond the SrTI structure.
9. The optical sensor array of claim 1 , wherein the two or more photodiodes respectively comprise a semiconductive junction that comprises a substantially planar region and a guard ring structure at edges thereof.
10. The optical sensor array of claim 1 , wherein, responsive to detection of the incident photons by any of the two or more photodiodes, the respective electrical signals generated by the two or more photodiodes are configured to be output to respective processing paths comprising respective electronic circuit elements that are not shared by the two or more photodiodes of the respective pixel.
11. The optical sensor array of claim 10 , wherein the pixels and the respective isolation regions are provided in or on a first semiconductor layer, and further comprising:
a second semiconductor layer comprising the respective electronic circuit elements, wherein the first semiconductor layer is stacked on a surface of the second semiconductor layer.
12. The optical sensor array of claim 11 , wherein the second semiconductor layer further comprises a controller configured to receive the respective electrical signals generated by the two or more photodiodes of each of the pixels and perform temporal correlation between respective times of arrival indicated by the respective electrical signals.
13. The optical sensor array of claim 11 , wherein the respective electronic circuit elements comprise respective quenching and/or recharge circuits.
14. The optical sensor array of claim 11 , further comprising:
metal layer structures in the second semiconductor layer adjacent the surface thereof, wherein the metal layer structures extend beneath the two or more photodiodes and are configured to provide electrical signals thereto or therefrom.
15. The optical sensor array of claim 14 , wherein the respective electronic circuit elements comprise an analog time integrator or an analog counter and the metal layer structures comprise integrating or counting capacitors thereof.
16. The optical sensor array of claim 1 , wherein at least one of the two or more photodiodes in the respective pixel are configured to be disabled independent of one another.
17. The optical sensor array of claim 1 , wherein the pixels are free of the respective isolation regions between the two or more photodiodes thereof.
18. The optical sensor array of claim 1 , wherein the two or more photodiodes comprises a single photon avalanche detector (SPAD).
19. The optical sensor array of claim 1 , wherein the optical sensor array is a light detection and ranging (LIDAR) detector array, and wherein a source of the incident photons is a LIDAR emitter array.
20. A light detection and ranging (LIDAR) detector array, comprising:
a plurality of pixels in a semiconductor material layer, the pixels respectively comprising at least one photodiode configured to generate an electrical signal responsive to incident photons when a reverse bias applied thereto is beyond a breakdown voltage thereof; and
optical structures configured to direct the incident photons to the at least one photodiode with an optical path length that is greater than a distance between a surface of the LIDAR detector array and the at least one photodiode.