Filter using piezoelectric film bonded to high resistivity silicon substrate with trap-rich layer
Acoustic resonator devices and filters are disclosed. An acoustic resonator includes a substrate having a trap-rich region adjacent to a surface and a single-crystal piezoelectric plate having parallel front and back surfaces, the back surface attached to the surface of the substrate except for a portion of the piezoelectric plate forming a diaphragm that spans a cavity in the substrate. An interdigital transducer (IDT) is formed on the front surface of the single-crystal piezoelectric plate such that interleaved fingers of the IDT are disposed on the diaphragm. The single-crystal piezoelectric plate and the IDT are configured such that a radio frequency signal applied to the IDT excites a shear primary acoustic mode within the diaphragm.
1. An acoustic resonator device comprising:
a substrate having a trap-rich region adjacent to a surface;
a piezoelectric layer having parallel front and back surfaces, the back surface facing the surface of the substrate, a portion of the piezoelectric layer forming a diaphragm that spans a cavity of the acoustic resonator device; and
an interdigital transducer (IDT) at the piezoelectric layer such that interleaved fingers of the IDT are on the diaphragm, the piezoelectric layer and the IDT configured such that a radio frequency signal applied to the IDT excites a primary shear acoustic mode in the diaphragm,
wherein the substrate comprises a silicon plate,
wherein the trap-rich region is a portion of the silicon plate that has been ion implanted to create defects in a crystalline structure of the silicon plate, and
wherein the back surface of the piezoelectric layer is bonded to the substrate via an intermediate dielectric layer.
2. The acoustic resonator device of claim 1 , wherein the diaphragm is contiguous with the piezoelectric layer around at least 50% of a perimeter of the cavity.
3. The acoustic resonator device of claim 1 , wherein the primary shear acoustic mode is excited by a predominantly lateral electric field in which atomic motions are predominantly parallel to the front and back surfaces of the piezoelectric layer to introduce a shear deformation within the piezoelectric layer.
4. The acoustic resonator device of claim 1 , wherein the trap-rich material is amorphous silicon or polycrystalline silicon.
5. The acoustic resonator device of claim 4 , wherein the trap-rich material is polycrystalline silicon, and an average grain size of the polycrystalline silicon is smaller than a minimum spacing between the interleaved fingers of the IDT.
6. The acoustic resonator device of claim 1 , wherein a depth of the trap-rich region is greater than a depth of an inversion layer that would form in the substrate in the absence of the trap-rich region.
7. An acoustic resonator device comprising:
a substrate having a trap-rich region adjacent to a surface;
a piezoelectric layer having parallel front and back surfaces, the back surface facing the surface of the substrate, a portion of the piezoelectric layer forming a diaphragm that spans a cavity of the acoustic resonator device; and
an interdigital transducer (IDT) at the piezoelectric layer such that interleaved fingers of the IDT are on the diaphragm, the piezoelectric layer and the IDT configured such that a radio frequency signal applied to the IDT excites a primary shear acoustic mode in the diaphragm,
wherein the substrate comprises a silicon plate,
wherein the trap-rich region is a deposited portion of the silicon plate that contains deep trap impurities, and
wherein the back surface of the piezoelectric layer is bonded to the substrate via an intermediate dielectric layer.
8. The acoustic resonator device of claim 7 , wherein the diaphragm is contiguous with the piezoelectric plate around at least 50% of a perimeter of the cavity.
9. The acoustic resonator device of claim 7 , wherein the primary shear acoustic mode is excited by a predominantly lateral electric field in which atomic motions are predominantly parallel to the front and back surfaces of the piezoelectric layer to introduce a shear deformation within the piezoelectric layer.
10. The acoustic resonator device of claim 7 , wherein the trap-rich material is amorphous silicon or polycrystalline silicon.
11. The acoustic resonator device of claim 10 , wherein the trap-rich material is polycrystalline silicon, and an average grain size of the polycrystalline silicon is smaller than a minimum spacing between the fingers.
12. The acoustic resonator device of claim 7 , wherein a depth of the trap-rich region is greater than a depth of an inversion layer that would form in the substrate in the absence of the trap-rich region.
13. A filter device, comprising:
a plurality of acoustic resonators comprising:
a substrate having a trap-rich region adjacent to a surface;
a piezoelectric layer having parallel front and back surfaces, the back surface facing the surface of the substrate, the piezoelectric layer having a portion that forms one or more diaphragms spanning respective cavities in the substrate; and
a conductor pattern at the piezoelectric layer, the conductor pattern including one or more interdigital transducers (IDTs) that each include interleaved fingers on the one or more diaphragms, respectively,
wherein the piezoelectric layer and all of the one or more IDTs are configured such that a respective radio frequency signal applied to each IDT excites a respective primary shear acoustic mode in the respective diaphragm,
wherein the substrate comprises a silicon plate,
wherein the trap-rich region is a portion of the silicon plate that has been ion implanted to create defects in a crystalline structure of the silicon plate, and
wherein the back surface of the piezoelectric layer is bonded to the substrate via an intermediate dielectric layer.
14. The filter device of claim 13 , wherein each of the one or more diaphragms is contiguous with the piezoelectric layer around at least 50% of a perimeter of the respective cavity.
15. The filter device of claim 13 , wherein the primary shear acoustic mode excited in each of the plurality of acoustic resonators is excited by a predominantly lateral electric field in which atomic motions are predominantly parallel to the front and back surfaces of the respective piezoelectric layer to introduce a shear deformation within the respective piezoelectric layer.
16. The filter device of claim 13 , wherein the trap-rich material is amorphous silicon or polycrystalline silicon.
17. The filter device of claim 16 , wherein the trap-rich material is polycrystalline silicon, and an average grain size of the polycrystalline silicon is smaller than a minimum spacing between the fingers.
18. The filter device of claim 13 , wherein a depth of the trap-rich region is greater than a depth of an inversion layer that would form in the substrate in the absence of the trap-rich region.
19. A filter device, comprising:
a plurality of acoustic resonators comprising:
a substrate having a trap-rich region adjacent to a surface;
a piezoelectric layer having parallel front and back surfaces, the back surface facing the surface of the substrate, the piezoelectric layer having a portion that forms one or more diaphragms spanning respective cavities in the substrate; and
a conductor pattern at the piezoelectric layer, the conductor pattern including one or more interdigital transducers (IDTs) that each include interleaved fingers on the one or more diaphragms, respectively,
wherein the piezoelectric layer and all of the one or more IDTs are configured such that a respective radio frequency signal applied to each IDT excites a respective primary shear acoustic mode in the respective diaphragm,
wherein the substrate comprises a silicon plate,
wherein the trap-rich region is a deposited portion of the silicon plate that contains deep trap impurities, and
wherein the back surface of the piezoelectric layer is bonded to the substrate via an intermediate dielectric layer.
20. The filter device of claim 19 , wherein the diaphragm is contiguous with the piezoelectric layer around at least 50% of a perimeter of the cavity.
21. The filter device of claim 19 , wherein the primary shear acoustic mode excited in each of the plurality of acoustic resonators is excited by a predominantly lateral electric field in which atomic motions are predominantly parallel to the front and back surfaces of the respective piezoelectric layer to introduce a shear deformation within the respective piezoelectric layer.
22. The filter device of claim 19 , wherein the trap-rich material is amorphous silicon or polycrystalline silicon.
23. The filter device of claim 22 , wherein the trap-rich material is polycrystalline silicon, and an average grain size of the polycrystalline silicon is smaller than a minimum spacing between the fingers.
24. The filter device of claim 19 , wherein a depth of the trap-rich region is greater than a depth of an inversion layer that would form in the substrate in the absence of the trap-rich region.