Resonator using YX-cut lithium niobate for high power applications
Acoustic resonator devices, filters, and methods are disclosed. An acoustic resonator includes a substrate and a lithium niobate (LN) plate having front and back surfaces and a thickness ts. The back surface is attached to a surface of the substrate. A portion of the LN plate forms a diaphragm spanning a cavity in the substrate. An interdigital transducer (IDT) is formed on the front surface of the LN plate with interleaved fingers of the IDT disposed on the diaphragm. The LN plate and the IDT are configured such that a radio frequency signal applied to the IDT excites a shear primary acoustic wave in the diaphragm. Euler angles of the LN plate are [0°, β, 0° ], where 0≤β≤60°. A thickness of the interleaved fingers of the IDT is greater than or equal to 0.8 ts and less than or equal to 2.0 ts.
1. An acoustic resonator device comprising:
a substrate;
at least one lithium niobate plate attached to the substrate directly or via one or more intermediate layers, the at least one lithium niobate plate having a portion that forms a diaphragm over a cavity; and
an interdigital transducer (IDT) at a surface of the at least one lithium niobate plate such that interleaved fingers of the IDT are at the diaphragm,
wherein a thickness of at least one of the interleaved fingers of the IDT is greater than or equal to 0.8 times a thickness of the diaphragm and less than or equal to 2.0 times the thickness of the diaphragm.
2. The acoustic resonator device of claim 1 , further comprising a dielectric layer on and between the interleaved fingers of the IDT.
3. The acoustic resonator device of claim 2 , wherein:
a thickness of the dielectric layer is less than or equal to 0.2 times the thickness of the diaphragm, and
the thickness of the at least one interleaved finger of the IDT is greater than or equal to 1.1 times the thickness of the diaphragm and less than or equal to 2.0 times the thickness of the diaphragm.
4. The acoustic resonator device of claim 2 , wherein:
a thickness of the dielectric layer is greater than 0.2 times the thickness of the diaphragm and less than or equal to 0.3 times a thickness of the diaphragm, and
the thickness of the at least one interleaved finger of the IDT is greater than or equal to 1.15 times the thickness of the diaphragm and less than or equal to 1.8 times the thickness of the diaphragm.
5. The acoustic resonator device of claim 2 , wherein a thickness of the dielectric layer is less than or equal to 0.35 times the thickness of the diaphragm.
6. The acoustic resonator device of claim 1 , wherein a direction of acoustic energy flow of the primary acoustic mode is substantially orthogonal to front and back surfaces of the diaphragm.
7. A filter device, comprising:
a plurality of acoustic resonators that each comprise:
a piezoelectric layer having a portion that forms a diaphragm over a cavity of the respective acoustic resonator; and
a conductor pattern that includes an interdigital transducer (IDT) with interleaved fingers at the respective diaphragm,
wherein at least one of the interleaved fingers of the IDT of at least one of the plurality of acoustic resonators has a thickness greater than or equal to 0.8 times a thickness of the respective diaphragm and less than or equal to 2.0 times the thickness of the respective diaphragm.
8. The filter device of claim 7 , further comprising a frequency setting dielectric layer on and between the interleaved fingers of a subset of the respective IDTs of the plurality of acoustic resonators.
9. The filter device of claim 8 , wherein:
a thickness of the frequency setting dielectric layer is less than or equal to 0.2 times the thickness of the respective diaphragm of the at least one acoustic resonator, and
the thickness of the at least one interleaved finger is greater than or equal to 1.1 times the thickness of the respective diaphragm of the at least one acoustic resonator and less than or equal to 2.0 times the thickness of the respective diaphragm of the at least one acoustic resonator.
10. The filter device of claim 8 , wherein:
a thickness of the frequency setting dielectric layer is greater than 0.2 times the thickness of the respective diaphragm of the at least one acoustic resonator and less than or equal to 0.3 times the thickness of the respective diaphragm of the at least one acoustic resonator, and
the thickness of the at least one interleaved finger is greater than or equal to 1.15 times the thickness of the respective diaphragm of the at least one acoustic resonator and less than or equal to 1.8 times the thickness of the respective diaphragm of the at least one acoustic resonator.
11. The filter device of claim 8 , wherein a thickness of the frequency setting dielectric layer is less than or equal to 0.35 times the thickness of the respective diaphragm of the at least one acoustic resonator.
12. The filter device of claim 8 , wherein:
the plurality of acoustic resonators includes one or more shunt resonators and one or more series resonator connected in a ladder filter circuit, and
the subset of the plurality of IDTs is the one or more shunt resonators.
13. The filter device of claim 7 , wherein respective directions of acoustic energy flow of all of the primary acoustic modes are substantially orthogonal to front and back surfaces of the diaphragm of each of the plurality of acoustic resonators.
14. The filter device of claim 7 , wherein the interleaved fingers of each of the IDTs of the plurality of acoustic resonators are disposed on a respective diaphragm spanning the respective cavity.
15. A method of fabricating an acoustic resonator device, comprising:
bonding a back surface of at least one lithium niobate plate to a substrate directly or via one or more intermediate layers, such that a portion of the at least one lithium niobate plate forms a diaphragm spanning a cavity;
forming an interdigital transducer (IDT) at a surface of the at least one lithium niobate plate such that interleaved fingers of the IDT are at the diaphragm; and
forming at least one of the interleaved fingers of the IDT to have a thickness that is greater than or equal to 0.8 times a thickness of the diaphragm and less than or equal to 2.0 times the thickness of the diaphragm.
16. The acoustic resonator device of claim 1 , wherein the at least one lithium niobate plate and the IDT are configured such that a radio frequency signal applied to the IDT excites a primary shear acoustic mode in the diaphragm.
17. The filter device of claim 7 , wherein the piezoelectric layer and the IDT of each of the plurality of acoustic resonators are configured such that respective radio frequency signals applied to the IDTs excite respective primary shear acoustic modes in the respective diaphragms.
18. The method of claim 15 , wherein the at least one lithium niobate plate and the IDT are configured such that a radio frequency signal applied to the IDT excites a primary shear acoustic mode in the diaphragm.
19. The acoustic resonator device of claim 1 , wherein the at least one lithium niobate plate comprises Euler angles that are [0°, β, 0° ], where β is greater than or equal to 0° and less than or equal to 60°.
20. The device of claim 7 , wherein the piezoelectric layer of the at least one acoustic resonator comprises Euler angles that are [0°, β, 0° ], where β is greater than or equal to 0° and less than or equal to 60°.