IP Library Granted Patent US 12,270,104
Granted Patent B2
US 12,270,104 · App. 17/696,101 · Granted Apr 8, 2025

Substrate with fluorinated yttrium coatings, and methods of preparing and using the substrates

Inventors: Nilesh Gunda (North Chelmsford, MA); Jayasri Narayanamoorthy (Acton, MA); Carlo Waldfried (Middleton, MA)
Assignee: ENTEGRIS, INC.
C23C16/45553C23C14/083C23C16/405C23C16/56H01L21/02274H01L21/0228
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Quick Facts
Patent No.
US 12,270,104
App. No.
17/696,101
Granted
Apr 8, 2025
Kind
B2
Abstract

Described are substrates that include high aspect ratio surfaces and non-high aspect ratio surfaces, at least two coatings, one coating at high aspect ratio surfaces and a second coating at non-high aspect ratio surfaces, and having fluorinated outer surfaces; methods of preparing these coatings; and substrates, surfaces, equipment, and components of equipment that include the coatings.

Claims (32)

1. A coated substrate comprising:

a substrate comprising high aspect ratio surfaces including a feature having an aspect ratio of least 2 to 1 and non-high aspect ratio surfaces which are not high aspect ratio surfaces; and

at least two coatings on the substrate, the coatings comprising:

a first yttrium oxide coating that covers high aspect ratio surfaces; and

a second yttrium oxide coating that covers non-high aspect ratio surfaces,

wherein an outermost portion of the coatings comprises fluorinated yttrium oxide at both high aspect ratio surfaces and non-high aspect ratio surfaces.

2. The substrate of claim 1 , wherein

the first yttrium oxide coating covers high aspect ratio surfaces and at least a portion of non-high aspect ratio surfaces, and

the second yttrium oxide coating covers non-high aspect ratio surfaces and at least a portion of high aspect ratio surfaces.

3. The substrate of claim 1 , wherein the first yttrium oxide coating is an atomic layer deposition coating.

4. The substrate of claim 1 , wherein the second yttrium oxide coating is a physical vapor deposition coating.

5. The substrate of claim 1 , wherein an outer portion of the first yttrium oxide coating comprises yttrium fluoride, yttrium oxyfluoride, or a composite that includes aluminum oxide and yttrium fluoride or yttrium oxyfluoride.

6. The substrate of claim 1 , wherein the first yttrium oxide coating has a thickness in a range from 50 to 500 nanometers.

7. The substrate of claim 1 , wherein an outer portion of the second yttrium oxide coating comprises yttrium oxyfluoride.

8. The substrate of claim 1 , wherein the second yttrium oxide coating has a thickness of at least 1 micron.

9. The substrate of claim 1 , comprising a non-yttrium-containing buffer layer between the substrate surface and the first yttrium oxide coating, the second yttrium oxide coating, or both.

10. The substrate of claim 9 , wherein the buffer layer comprises an atomic layer deposition layer that comprises aluminum oxide.

11. The substrate of claim 9 , further comprising:

the buffer layer covering high aspect ratio surfaces and non-high aspect ratio surfaces,

the first coating covering the buffer layer at high aspect ratio surfaces and non-high aspect ratio surfaces, and

the second coating covering the first coating at non-high aspect ratio surfaces.

12. The substrate of claim 1 , comprising:

the second yttrium oxide coating deposited onto the non-high aspect ratio surfaces, and

the first yttrium oxide coating deposited onto the high aspect ratio surface and covering the second yttrium oxide coating.

13. The substrate of claim 1 , wherein:

the substrate comprises:

two opposed surfaces each having a length and a width dimension,

a thickness between the two opposed surfaces, and

an aperture extending between the two opposed surfaces, the aperture comprising a high aspect ratio aperture surface extending along the thickness, and an aperture diameter, and

the ratio of the thickness to the aperture diameter (thickness:diameter) is greater than 5:1.

14. The substrate of claim 13 , wherein the feature has an aspect ratio of at least 10 to 1.

15. The substrate of claim 13 , wherein the substrate is a process chamber component of a semiconductor processing device.

Assignments (2)
SECURITY INTEREST Recorded Jun 2, 2023
From: ENTEGRIS, INC.; CMC MATERIALS LLC
To: MORGAN STANLEY SENIOR FUNDING, INC., AS COLLATERAL AGENT
Reel/Frame 063857/0199 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 16, 2022
From: GUNDA, NILESH; NARAYANAMOORTHY, JAYASRI; WALDFRIED, CARLO
To: ENTEGRIS, INC.
Reel/Frame 059923/0889 →