INTEGRATED VCSEL DEVICE AND PHOTODIODE AND METHODS OF FORMING THE SAME
Various embodiments set forth a light-emitting device, comprising a single die formed from a portion of a semiconductor substrate of a first conductivity type, a first vertical cavity surface-emitting laser (VCSEL) that is formed from a set of material layers disposed on a surface of the portion of the semiconductor substrate. and a first photodiode that is formed at the surface of the portion of the semiconductor substrate.
1 . A light-emitting device, comprising:
a single die formed from a portion of a semiconductor substrate of a first conductivity type;
a first vertical cavity surface-emitting laser (VCSEL) that is formed from a set of material layers disposed on a surface of the portion of the semiconductor substrate; and
a first photodiode that is formed at the surface of the portion of the semiconductor substrate.
2 . The light-emitting device of claim 1 , wherein the first photodiode includes:
a first semiconductor region of the first conductivity type that includes a portion of the semiconductor substrate;
a second semiconductor region of a second conductivity type that is disposed on an intrinsic semiconductor region; and
the intrinsic semiconductor region that is disposed between the first semiconductor region and the second semiconductor region.
3 . The light-emitting device of claim 2 , wherein the intrinsic semiconductor region is formed from an edge region of the portion of the semiconductor substrate.
4 . The light-emitting device of claim 2 , further comprising a contact that is electrically coupled to the second semiconductor region.
5 . The light-emitting device of claim 1 , further comprising an array of VCSELs that includes the first VCSEL and is formed from the first set of material layers.
6 . The light-emitting device of claim 5 , wherein each VCSEL in the array of VCSELs is electrically coupled to at least one other VCSEL in the array of VCSELs by at least one metal trace included in the light-emitting device.
7 . The light-emitting device of claim 5 , wherein the first photodiode is disposed between two VCSELs in the array of VCSELs.
8 . The light-emitting device of claim 5 , wherein the first photodiode is disposed in a center region of the array of VCSELs.
9 . The light-emitting device of claim 1 , further comprising an array of photodiodes that includes the first photodiode, wherein each photodiode of the array of photodiodes is formed at the surface of the portion of the semiconductor substrate
10 . The light-emitting device of claim 9 , further comprising an array of VCSELs that includes the first VCSEL and is formed from the first set of material layers, wherein the first photodiode is disposed between two VCSELs of the array of VCSELS and a second photodiode of the array of photodiodes is disposed at an edge region of the array of VCSELs.
11 . The light-emitting device of claim 9 , further comprising an array of VCSELs that includes the first VCSEL and is formed from the first set of material layers, wherein the first photodiode is disposed in a center region of the array of VCSELs.
12 . The light-emitting device of claim 1 , wherein the set of material layers comprises a set of epitaxially grown layers.
13 . The light-emitting device of claim 1 , further comprising at least one metal trace that electrically coupled to the portion of the semiconductor substrate.
14 . A method of forming a light-emitting device, the method comprising:
forming a set of material layers on a semiconductor substrate of a first conductivity type, wherein the set of material layers includes a laser cavity;
etching a portion of the set of material layers to expose a surface of an edge region of the semiconductor substrate;
performing a first ion implantation on the edge region to form an intrinsic semiconductor region from the edge region;
performing a second ion implantation on a portion of the intrinsic semiconductor region to form a semiconductor region of a second conductivity type; and
separating a die portion from the semiconductor substrate, wherein the die portion includes the laser cavity, the intrinsic semiconductor region, and the semiconductor region of a second conductivity type.
15 . The method of claim 14 , further comprising performing a third ion implantation on the set of material layers to isolate the laser cavity included in the set of material layers.
16 . The method of claim 14 , wherein forming the set of material layers on the semiconductor substrate comprises epitaxially growing the set of material layers on the semiconductor substrate.
17 . The method of claim 14 , further comprising, prior to separating the die portion from the semiconductor substrate, forming a first electrical connection to a top region of the set of material layers and a second electrical connection to the semiconductor region of the second conductivity type.
18 . The method of claim 17 , wherein the top region of the set of material layers comprises a top mirror layer of a vertical cavity surface-emitting laser (VCSEL) that is formed from the set of material layers.
19 . The method of claim 17 , wherein the second electrical connection is electrically coupled to at least one other semiconductor region of the second conductivity type that is included in the die portion.
20 . The method of claim 14 , wherein etching the portion of the set of material layers to expose the surface of the edge region of the semiconductor substrate comprises etching a plurality of portions of the set of materials so that a plurality of edge regions of the semiconductor substrate associated with the die portion are exposed.