Light-emitting device and display device using the same
A light-emitting device and a display including the same can improve the process stability during the process of disposing the light-emitting device. A light-emitting device includes the n-type semiconductor layer and the p-type semiconductor layer, and a structure is disposed so as to minimize electrical short between electrodes even if the light-emitting device is misaligned. The structure may have at least one side surface in an inverted taper shape and may be disposed between electrodes to minimize a short-circuit therebetween during the process of connecting the electrodes.
1. A display device, comprising:
a substrate;
a thin-film transistor and a common power line disposed on the substrate;
a passivation layer disposed on the thin-film transistor and the common power line;
a light-emitting device disposed on the passivation layer and including a first electrode, a second electrode, and a structure disposed between the first electrode and the second electrode;
a planarization layer disposed on the passivation layer to cover a side surface of the light-emitting device;
a pixel electrode electrically connected to the thin-film transistor through a first circuit contact hole in the passivation layer and the planarization layer, and electrically connected to the first electrode through an electrode contact hole in the planarization layer; and
a common electrode electrically connected to the common power line through a second circuit contact hole formed in the passivation layer and planarization layer, and electrically connected to the second electrode through the electrode contact hole formed in the planarization layer.
2. The display device of claim 1 , wherein at least one side of the structure adjacent to the first electrode or the second electrode has an inverted taper shape.
3. The display device of claim 1 , wherein the structure overlaps at least partly with one or both of the first electrode and the second electrode.
4. The display device of claim 1 , wherein the light-emitting device further includes a LED element, and the first electrode and the second electrode are on a top surface of the LED element.
5. The display device of claim 1 , wherein the structure is made of an insulating material.
6. The display device of claim 1 , wherein the structure has an inverted taper shape with its smaller side attached to the light-emitting device.
7. The display device of claim 1 , wherein the structure is disposed to overlap with one or both of the first electrode and the second electrode, and
wherein one or both of the pixel electrode and the common electrode extend over the structure.
8. The display device of claim 1 , wherein the light-emitting device is disposed in a recess formed in the passivation layer of the substrate.
9. The display device of claim 1 , wherein an adhesive member is provided on the substrate, and
wherein the adhesive member is in contact with the bottom of the light-emitting device.
10. The display device of claim 1 , wherein a reflective layer is disposed under an emission region of the light-emitting device.
11. The display device of claim 10 , wherein the reflective layer is formed of the same material as an electrode of the thin-film transistor, or the reflective layer is disposed on the same layer as an electrode of the thin-film transistor.
12. The display device of claim 1 , wherein the planarization layer is made up of multi-layer structure including a first planarization layer and a second planarization layer.
13. A display device, comprising:
a substrate;
a thin-film transistor and a common power line disposed on the substrate;
an adhesive layer disposed on the thin-film transistor and the common power line;
a light-emitting device attached on the adhesive layer, the light-emitting device including:
a first semiconductor layer;
an emission layer on a part of a top surface of the first semiconductor layer;
a second semiconductor layer on the emission layer;
a first electrode on the second semiconductor layer;
a second electrode on another part of the top surface of the first semiconductor layer; and
a structure disposed between the first electrode and the second electrode and covering an edge of each of the first electrode and the second electrode;
a planarization layer disposed on the adhesive layer to fix the light-emitting device to the substrate;
a pixel electrode configured to connect the thin-film transistor and the first electrode; and
a common electrode configured to connect the common power line and the second electrode, and separated from the pixel electrode by the structure.
14. The display device of claim 13 , wherein a side surface of the emission layer is at a same plane with a side surface of the second semiconductor layer, and the structure covers both of the side surface of the emission layer and the side surface of the second semiconductor layer.
15. The display device of claim 14 , wherein an extended line of the side surface of the emission layer and an extended line of a side surface of the structure intersect each other.
16. The display device of claim 15 , wherein at least one side of the structure adjacent to the first electrode or the second electrode has an inverted taper shape.
17. The display device of claim 13 , wherein a top surface of the structure and a top surface of the planarization layer are parallel with each other.
18. The display device of claim 13 , further comprising:
a first circuit contact hole in the planarization layer and the adhesive layer; and
a second circuit contact hole in the planarization layer and the adhesive layer,
wherein the pixel electrode is disposed in the first circuit contact hole, and the common electrode is disposed in the second circuit contact hole.
19. The display device of claim 14 , wherein the first semiconductor layer is an n-type semiconductor, and the second semiconductor layer is a p-type semiconductor.