Method and system for manufacturing nanoporous structures on a substrate

1. An integrated system for manufacturing a nanoporous structure on a substrate, the integrated system comprising:

a reactor chamber equipped with a chamber heater effective to heat the reactor chamber and a substrate disposed in the reactor chamber, the reactor chamber having an inlet for introducing a vapor of an organic linker into the reactor chamber and an outlet for removing a gaseous stream from the reactor chamber;

a platform equipped with a platform heater and disposed inside the reactor chamber, the platform being effective to support and heat the substrate, wherein the platform heater is configured to heat the substrate to a temperature that is different from a temperature of the reactor chamber; and

an additive manufacturing apparatus disposed inside the reactor chamber, the additive manufacturing apparatus effective to additively forming a precursor structure on the substrate,

wherein the integrated system further comprises a vapor generation system outside of the reactor chamber, and

the vapor generation system is in fluid communication with the inlet of the reactor chamber, and comprises a vapor generation heater.

2. The integrated system of claim 1 , wherein the additive manufacturing apparatus is an aerosol jetting apparatus, a binder jetting apparatus, or a material jetting apparatus.

3. The integrated system of claim 1 , wherein the outlet of the reactor chamber is coupled to a pump.

4. The integrated system of claim 1 , wherein the platform is equipped with more than one heater to evenly heat the substrate.

5. The integrated system of claim 1 , wherein the reactor chamber is equipped with more than one heater mounted on walls of the reactor chamber.

6. The integrated system of claim 1 , further comprising the vapor of the organic linker in the reactor chamber.

7. The integrated system of claim 6 , wherein the organic linker comprises at least one of a carboxylate or a imidazolate.

8. A method of manufacturing a nanoporous structure on a substrate with the integrated system of claim 1 , the method comprising:

additively forming a precursor structure from at least one of a metal oxide or a metal cluster compound on the substrate;

exposing the precursor structure to a vapor of an organic linker generated from the vapor generation system and introduced into the reactor chamber via the inlet of the reactor chamber; and

reacting the at least one of the metal oxide or the metal cluster compound in the precursor structure with the organic linker to form the nanoporous structure comprising a metal-organic framework,

wherein the additively forming, the exposing, and the reacting occur in the reactor chamber.

9. The method of claim 8 , comprising additively forming the precursor structure via an aerosol jetting process, a binder jetting process, or a material jetting process.

10. The method of claim 8 , wherein the precursor structure is formed from the metal oxide, and the metal oxide comprises at least one of zinc oxide, aluminum oxide, magnesium oxide, iron oxide, cobalt oxide, nickel oxide, copper oxide, calcium oxide, barium oxide, cerium oxide, manganese oxide, gallium oxide, or cadmium oxide.

11. The method of claim 8 , wherein the precursor structure is formed from the metal cluster compound, and the metal cluster compound comprises at least one of a titanium-based cluster compound or a zirconium-based cluster compound.

12. The method of claim 8 , wherein the metal oxide and the metal cluster compound have a particle size of about 10 nm to about 100 μm.

13. The method of claim 8 , wherein the precursor structure has a thickness of about 10 nm to about 100 microns.

14. The method of claim 8 , further comprising depowdering the precursor structure to remove loose particles from the precursor structure before the precursor structure is exposed to the vapor of the organic linker.

15. The method of claim 8 , wherein the organic linker comprises at least one of a carboxylate or a imidazolate.

16. The method of claim 8 , comprising reacting the at least one of the metal oxide or the metal cluster compound in the precursor structure with the organic linker at a temperature of about 80° C. to about 100° C. to form the nanoporous structure.

17. The method of claim 8 , comprising reacting the at least one of the metal oxide or the metal cluster compound in the precursor structure with the organic linker at a pressure of about 0.001 bar to about 1 bar to form the nanoporous structure.

18. The method of claim 8 , wherein

the metal-organic framework is a crystalline network comprising inorganic nodes linked by organic moieties, the inorganic nodes formed from the at least one of the metal oxide or the metal cluster compound, and the organic moieties formed from the organic linker; and

the crystalline network has voids with a pore diameter of about 5 to about 20 angstroms.

19. The method of claim 8 , further comprising exposing the nanoporous structure to a temperature of about 120° C. to about 150° C. at a subatmospheric pressure of about 0.0001 bar to about 0.001 bar to activate the nanoporous structure.

20. The method of claim 8 , comprising:

additively forming the precursor structure on the substrate via an aerosol jetting process, a binder jetting process, or a material jetting process from at least one of the metal oxide or the metal cluster compound in the reactor chamber equipped;

introducing the vapor of the organic linker into the reactor chamber;

exposing the precursor structure to the vapor of the organic linker in the reactor chamber;

reacting the at least one of the metal oxide or the metal cluster compound in the precursor structure with the organic linker in the reactor chamber at a temperature of about 80° C. to about 100° C. to form the nanoporous structure comprising the metal-organic framework; and

exposing the nanoporous structure to a temperature of about 120° C. to about 150° C. and a subatmospheric pressure of about 0.0001 bar to about 0.001 bar to activate the nanoporous structure.

21. The method of claim 20 , wherein the vapor of the organic linker is introduced into the reactor chamber together with a gaseous carrier.

22. The method of claim 8 , wherein the nanoporous structure is discontinuous and has a predetermined pattern.

23. The method of claim 8 , wherein the nanoporous structure has a first portion and a second portion, and the first portion and the second portion have at least one of a different thickness; a different shape; or a different metal-organic framework.

24. The method of claim 8 , further comprising:

additively forming a second precursor structure from at least one of a second metal oxide or a second metal cluster compound on the nanoporous structure;

exposing the second precursor structure to a vapor of a second organic linker; and

reacting the at least one of the second metal oxide or the second metal cluster compound in the second precursor structure with the second organic linker to form a second nanoporous structure comprising a second metal-organic framework disposed on the nanoporous structure;

wherein the nanoporous structure and the second nanoporous structure have at least one of a different thickness; a different shape; or a different metal-organic framework.

25. An integrated system for manufacturing a nanoporous structure on a substrate, the integrated system comprising:

a reactor chamber equipped with a chamber heater effective to heat the reactor chamber and a substrate disposed in the reactor chamber, the reactor chamber having an inlet for introducing a vapor of an organic linker into the reactor chamber and an outlet for removing a gaseous stream from the reactor chamber;

a platform equipped with a platform heater and disposed inside the reactor chamber, the platform being effective to support and heat the substrate, wherein the platform heater is configured to heat the substrate to a temperature that is different from a temperature of the reactor chamber; and

an additive manufacturing apparatus disposed inside the reactor chamber, the additive manufacturing apparatus effective to additively forming a precursor structure on the substrate,

wherein the integrated system further comprises the vapor of the organic linker in the reactor chamber.