IP Library Granted Patent US 12,388,235
Granted Patent B2
US 12,388,235 · App. 17/706,682 · Granted Aug 12, 2025

Tunable VCSEL polarization control with intracavity subwavelength grating

Inventor: Bartley C. Johnson (North Andover, MA)
Assignee: Excelitas Technologies Corp.
H01S5/18366H01S5/0281H01S5/041H01S5/068H01S5/18361H01S5/18383H01S5/18386H01S5/343
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Quick Facts
Patent No.
US 12,388,235
App. No.
17/706,682
Granted
Aug 12, 2025
Kind
B2
Abstract

A very strong selection mechanism is provided in a tunable vertical cavity surface emitting laser (VCSEL) by manipulating the laser threshold to be different for TE and TM polarization by a employing a subwavelength grating in the laser cavity. The laser selects the polarization with the lowest threshold. The grating does not diffract and does not add loss to the cavity. It works by creating a large birefringence layer between the semiconductor and air sub-cavities of the full VCSEL. Multilayer stack calculations show that this results in a lower threshold for the TM polarization over the TE. This subwavelength grating layer, in one embodiment, replaces the AR coating on the semiconductor surface.

Claims (25)

1. A tunable vertical surface emitting laser configured to emit light at least at a wavelength (λ), comprising:

a deflectable membrane device carrying a mirror and a half VCSEL defining an optical cavity of the laser; and

a subwavelength grating formed in a material in the optical cavity, wherein the material has a refractive index (n), and wherein the subwavelength grating has a pitch (Λ) that is less than λ/n.

2. The laser of claim 1 , wherein the subwavelength grating is located on the half VCSEL.

3. The laser of claim 1 , wherein the subwavelength grating formed on a top high index layer of the half VCSEL.

4. The laser of claim 1 , wherein the half VCSEL includes a distributed Bragg reflector.

5. The laser of claim 1 , wherein the grating has a 50% duty cycle.

6. The laser of claim 1 , wherein the grating is alternating material and air.

7. The laser of claim 1 , wherein the grating is alternating InGaP and air.

8. The laser of claim 1 , wherein the grating replaces an antireflective coating on the half VCSEL.

9. A method for fabricating a tunable vertical surface emitting laser configured to emit light at least at a wavelength (λ), comprising:

forming a deflectable membrane device and a half VCSEL device defining an optical cavity of the laser; and

forming a subwavelength grating into a material in the half VCSEL device, wherein the material has a refractive index (n), and wherein the subwavelength grating has a pitch (Λ) that is less than λ/n.

10. The method of claim 9 , wherein the subwavelength grating is etched into the half VCSEL device.

11. The method of claim 9 , wherein the subwavelength grating is etched into on a top high index layer of the half VCSEL.

12. The method of claim 9 , wherein the grating has a 50% duty cycle.

13. The method of claim 9 , wherein the grating is alternating material and air.

14. The method of claim 9 , wherein the grating is alternating InGaP and air.

15. The method of claim 9 , wherein the grating replaces an antireflective coating on the half VCSEL.

16. The method of claim 9 , wherein the forming the subwavelength grating comprises etching the half VCSEL device.

17. The method of claim 9 , wherein the subwavelength grating is defined by lithography.

18. A tunable vertical surface emitting laser system configured to emit light at least at a wavelength (λ), comprising:

a laser comprising a deflectable membrane device carrying a mirror and a half VCSEL defining an optical cavity of the laser and a subwavelength grating formed in a material in the optical cavity, wherein the material has a refractive index (n), and

wherein the subwavelength grating has a pitch (Λ) that is less than λ/n; and

a pump chip for optically pumping the laser.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 26, 2022
From: JOHNSON, BARTLEY C.
To: EXCELITAS TECHNOLOGIES CORP.
Reel/Frame 059732/0924 →
Continuity (2)
Provisional Application 63167209 · Mar 29, 2021
Related Publication 20220311213A1 · Sep 29, 2022
References Cited (38)
US 6661830B1 · Reed · 2003 [cited by examiner]
US 20070153860A1 · Chang-Hasnain · 2007 [cited by examiner]
US 20140176958A1 · Flanders · 2014 [cited by examiner]
US 20140219301A1 · Chung · 2014 [cited by examiner]
US 20140268169A1 · Jayaraman · 2014 [cited by examiner]
US 20160079736A1 · Yvind · 2016 [cited by examiner]
US 20190348815A1 · Johnson · 2019 [cited by examiner]
US 20200067281A1 · Curwen · 2020 [cited by examiner]
US 20210050712A1 · Johnson · 2021 [cited by examiner]
EP 2525450A1 · 2012 [cited by applicant]
GB 2582378A · 2020 [cited by applicant]
WO WO2018067837A1 · 2018 [cited by applicant]
International Search Report and Written Opinion for International Application No. PCT/US2022/022244 mailed Jul. 12, 2022. [cited by applicant]
[No Author Listed], Mode Decomposition. MEEP Documentation. 2022. 34 pages. https://meep.readthedocs.io/en/latest/Python_Tutorials/Mode_Decomposition/ [Last accessed Oct. 19, 2022]. [cited by applicant]
Ansbaek et al., Vertical-cavity surface-emitting lasers for medical diagnosis. Research Paper), Sep. 2012;30. [cited by applicant]
Bobrov et al., VCSEL polarization control by rhomboidal selectively-oxidized current aperture. 2016 International Conference Laser Optics (LO) Jun. 27, 2016:R3-16. [cited by applicant]
Chong et al., Theoretical gain of strained-layer semiconductor lasers in the large strain regime. IEEE journal of quantum electronics. Feb. 1989;25(2):171-8. [cited by applicant]
Coldren et al., Diode lasers and photonic integrated circuits. John Wiley & Sons; Mar. 2, 2012. 723 pages. [cited by applicant]
Cook et al., Air Cavity Dominant VCSELs with a Wide Wavelength Sweep. Optical Society of America. 2018. 10 pages. [cited by applicant]
Debernardi et al., Reliable polarization control of VCSELs through monolithically integrated surface gratings: a comparative theoretical and experimental study. IEEE Journal of selected topics in quantum electronics. Fe… [cited by applicant]
Flanders, Submicrometer periodicity gratings as artificial anisotropic dielectrics. Applied Physics Letters. Mar. 15, 1983;42(6):492-4. [cited by applicant]
Ha et al., Polarization control of vertical-cavity surface-emitting lasers by asymmetric oxide-aperture. Technical Digest. CLEO/Pacific Rim'99. Pacific Rim Conference on Lasers and Electro-Optics (Cat. No. 99TH8464) Aug… [cited by applicant]
Jayaraman et al., VCSEL swept light sources. Optical Coherence Tomography. 2015:659. [cited by applicant]
Johnson et al., OCT applications in optics R&D and manufacturing. Optical Coherence Tomography and Coherence Domain Optical Methods in Biomedicine XXV Mar. 5, 2021 (11630);112-17. [cited by applicant]
Johnson et al., Tunable 1060nm VCSEL co-packaged with pump and SOA for OCT and LiDAR. Optical Coherence Tomography and Coherence Domain Optical Methods in Biomedicine XXIII Feb. 22, 2019 (10867);5-14. SPIE. [cited by applicant]
Kawaguchi, Polarization-bistable vertical-cavity surface-emitting lasers: application for optical bit memory. Opto-Electronics Review. Dec. 1, 2009;17(4):265-74. [cited by applicant]
Matsui et al., Complete polarization mode control of long-wavelength tunable vertical-cavity surface-emitting lasers over 65-nm tuning, up to 14-mW output power. IEEE Journal of Quantum Electronics. Sep. 4, 2003;39(9):1… [cited by applicant]
Niskiyama et al., Highly strained GaInAs—GaAs quantum-well vertical-cavity surface-emitting laser on GaAs (311) B substrate for stable polarization operation. IEEE Journal of Selected Topics in Quantum Electronics. Mar.… [cited by applicant]
Okuno et al., 1.3 μm wavelength vertical cavity surface emitting laser fabricated by orientation-mismatched wafer bonding: A prospect for polarization control. Applied physics letters. Apr. 14, 2003;82(15):2377-9. [cited by applicant]
Orfanidis, Multilayer structures. Electromagnetic Waves and Antennas. 2002:186-240. [cited by applicant]
Ortsiefer et al., Polarization control in buried tunnel junction VCSELs using a birefringent semiconductor/dielectric subwavelength grating. IEEE Photonics Technology Letters. Oct. 23, 2009;22(1):15-7. [cited by applicant]
Ostermann et al., Polarization-controlled surface grating VCSELs under externally induced anisotropic strain. IEEE Photonics Technology Letters. Aug. 8, 2007;19(17):1301-3. [cited by applicant]
Qiao et al., Wide, Continuously Swept VCSEL Using a Novel Air-Cavity-Dominant Design. Optical Fiber Communication Conference Mar. 11, 2018;Th1I-7. Optical Society of America. [cited by applicant]
Rao et al., Long-wavelength VCSEL using high-contrast grating. IEEE Journal of Selected Topics in Quantum Electronics. Feb. 12, 2013;19(4):1701311. [cited by applicant]
Sato et al., Polarization bistable characteristics of mesa structure 980 nm vertical-cavity surface-emitting lasers. Japanese journal of applied physics. Apr. 14, 2006;45(4L):L438. [cited by applicant]
Yariv et al., Electromagnetic propagation in periodic stratified media. I. General theory. JOSA. Apr. 1, 1977;67(4):423-38. [cited by applicant]
Yoshikawa et al., Polarization-controlled single-mode VCSEL. IEEE journal of quantum electronics. Jun. 1998;34(6):1009-15. [cited by applicant]
Zheng et al., Control of polarization phase offset in low threshold polarization switching VCSELs. IEEE Photonics Technology Letters. Dec. 10, 2010;23(5):305-7. [cited by applicant]