Semiconductor package
A semiconductor package includes a substrate body made of an insulating material and having a frame shape with a through hole; and a heat-dissipating member made of a metallic material and having a top face serving as an element-mounting surface, the element-mounting surface being positioned in the through hole. A back face of the substrate body and a front face of the heat-dissipating member are joined to each other with a joining agent, the back face being oriented downward, the front face being oriented upward. The substrate body includes a first riser portion extending downward from the back face. The heat-dissipating member includes a second riser portion extending upward from the front face. The joining agent is placed in a space enclosed by the back face, the first riser portion, the front face, and the second riser portion.
1. A semiconductor package comprising:
a substrate body made of an insulating material and having a frame shape with a through hole; and
a heat-dissipating member made of a metallic material and having a top face serving as an element-mounting surface, the element-mounting surface being positioned in the through hole,
wherein a back face of the substrate body and a front face of the heat-dissipating member are joined to each other with a joining agent, the back face being oriented downward, the front face being oriented upward,
wherein the substrate body includes a first riser portion extending downward from the back face,
wherein the heat-dissipating member includes a second riser portion extending upward from the front face,
wherein the joining agent is placed in a space enclosed by the back face, the first riser portion, the front face, and the second riser portion, and
wherein the heat-dissipating member also includes a planar portion oriented upward and extending inward from the second riser portion, and a third riser portion extending upward from the planar portion to the element-mounting surface.
2. The semiconductor package according to claim 1 ,
wherein an inner lateral face of the substrate body and an outer lateral face of the heat-dissipating member that are positioned face to face with each other are spaced apart from each other.
3. The semiconductor package according to claim 1 ,
wherein the joining agent is filler metal.
4. The semiconductor package according to claim 2 ,
wherein the joining agent is filler metal.
5. The semiconductor package according to claim 1 ,
wherein the substrate body is made of alumina, and
wherein the heat-dissipating member is made of copper.
6. The semiconductor package according to claim 2 ,
wherein the substrate body is made of alumina, and
wherein the heat-dissipating member is made of copper.
7. The semiconductor package according to claim 3 ,
wherein the substrate body is made of alumina, and
wherein the heat-dissipating member is made of copper.
8. The semiconductor package according to claim 4 ,
wherein the substrate body is made of alumina, and
wherein the heat-dissipating member is made of copper.