LOW TEMPERATURE DEPOSITION PROCESS
The invention provides a process for the deposition of titanium silicon nitride (TiSiN) films onto a substrate, such as a substrate surface on a microelectronic device. Surprisingly, the process can be run at relatively low temperatures for the silicon precursors described herein.
1 . A process for depositing a titanium silicon nitride film on a microelectronic device substrate in a reaction zone, which comprises:
introducing compounds A, B, and C, individually, into the reaction zone under pulsed vapor deposition conditions to provide a pulse sequence, wherein the reaction zone is about 250° C. to about 450° C.; each compound optionally followed by a purge step with an inert gas, and wherein A is chosen from bis-t-amyl ethylene silylene, SiI 2 H 2 , and SiI 4 ; B is TiCl 4 ; and C is a nitrogen-containing reducing gas, and repeating the pulse sequence until a desired thickness of the film has been deposited.
2 . The process of claim 1 , wherein the thickness of the titanium silicon nitride film is at least about 10 Å.
3 . The process of claim 1 , wherein the thickness of the titanium silicon nitride film is at least about 20 Å.
4 . The process of claim 1 , wherein the thickness of the titanium silicon nitride film is at least about 30 Å.
5 . The process of claim 1 , wherein the pulsed vapor deposition conditions comprise a plurality of pulse sequences, wherein the pulse sequence comprises a pulse of A, followed by a pulse of B, followed by a pulse of C, each pulse optionally followed by a purge step with an inert gas.
6 . The process of claim 1 , wherein the pulsed vapor deposition conditions comprise a plurality of pulse sequences, wherein the pulse sequence comprises a pulse of A, followed by a pulse of C, followed by a pulse of B, followed by a pulse of C, each pulse optionally followed by a purge step with an inert gas.
7 . The process of claim 1 , wherein A is bis-t-amyl ethylene silylene.
8 . The process of claim 1 , wherein A is SiI 2 H 2 .
9 . The process of claim 1 , wherein B is titanium tetrachloride.
10 . The process of claim 1 , wherein the nitrogen-containing reducing gas is chosen from ammonia; hydrazine; 1,1-dimethyl hydrazine; and 1,2-dimethyl hydrazine.
11 . The process of claim 1 , wherein the nitrogen-containing reducing gas is ammonia.
The process of claim 1 , wherein the pulsed vapor deposition conditions further comprise introduction of B and C to provide a titanium nitride sub-cycle, each of B and C optionally followed by a purge with an inert gas. 12 .
12 . The process of claim 5 , further comprising introduction of B and C to provide a titanium nitride sub-cycle, each of B and C optionally followed by a purge with an inert gas.
13 . The process of claim 11 , wherein B is introduced followed by C
14 . The process of claim 11 , wherein the number of titanium nitride sub-cycles utilized in the process, relative to the number of pulse sequences is pre-determined to provide a titanium silicon nitride film having a desired weight percentage of silicon.
15 . The process of claim 12 , wherein the number of titanium nitride sub-cycles utilized in the process, relative to the number of pulse sequences is pre-determined to provide a titanium silicon nitride film having a desired weight percentage of silicon.
16 . The process of claim 1 , wherein the percentage of silicon in the film is about 5 to about 50 weight percent.
17 . The process of claim 1 , wherein the percentage of silicon in the film is about 5 to about 50 weight percent.
18 . The process of claim 1 , wherein the percentage of silicon in the film is about 15 to about 35 weight percent.
19 . The process of claim 1 , wherein the percentage of silicon in the film is about 15 to about 35 weight percent.