ESD protection for integrated circuit devices
An integrated circuit device having insulated gate field effect transistors (IGFETs) having a plurality of horizontally disposed channels that can be vertically aligned above a substrate with each channel being surrounded by a gate structure has been disclosed. The integrated circuit device may include electrostatic discharge (ESD) protection circuit structures. The ESD protection circuit structures may be formed in regions other than the region that the IGFETs are formed as well as in the region that the IGFETs having a plurality of horizontally disposed channels that can be vertically aligned above a substrate with each channel being surrounded by a gate structure are formed. By forming ESD protection circuit structures in regions below the IGFETs, an older process technology may be used and device size may be decreased. Furthermore, planar IGFETs of FinFETs may be formed in other regions to decrease device size and improve costs.
1. An integrated circuit device, comprising:
an output buffer circuit having an input terminal coupled to receive an input signal and an output terminal coupled to provide an output signal, the output buffer circuit including at least one insulated gate field effect transistor (IGFET); and
a first electrostatic discharge (ESD) protection circuit structure coupled to the output terminal;
wherein the output signal is provided external to the integrated circuit device and the first ESD protection circuit structure includes a first diode, the first diode including at least three substantially horizontally disposed current carrying regions that are substantially vertically aligned.
2. The integrated circuit device of claim 1 , wherein:
the output buffer circuit includes
a p-type IGFET including a plurality of substantially horizontally disposed channels that are substantially vertically aligned and having a control gate that substantially surrounds the substantially horizontally disposed channels; and
an n-type IGFET including a plurality of substantially horizontally disposed channels that are substantially vertically aligned and having a control gate that substantially surrounds the substantially horizontally disposed channels, the p-type IGFET and n-type IGFET, each have a drain terminal commonly coupled to the first ESD protection circuit structure.
3. The integrated circuit device of claim 2 , wherein:
the p-type IGFET and n-type IGFET, each have a control gate terminal commonly coupled to receive the input signal.
4. The integrated circuit device of claim 3 , wherein:
the n-type IGFET has a source terminal coupled to receive a first power supply potential, the first power supply potential is received external to the integrated circuit device.
5. The integrated circuit device of claim 4 , wherein:
the first diode has a cathode terminal coupled to the output terminal and an anode terminal coupled to the first power supply potential.
6. The integrated circuit device of claim 5 , wherein:
the p-type IGFET has a source terminal coupled to receive a second power supply potential, the second power supply potential is received from external to the integrated circuit device.
7. The integrated circuit device of claim 6 , wherein:
the first ESD circuit structure includes a second diode, the second diode including at least three substantially horizontally disposed current carrying regions that are substantially vertically aligned, the second diode has a cathode terminal coupled to the second power supply potential and an anode terminal coupled to the output terminal.
8. The integrated circuit device of claim 7 , wherein:
the first power supply potential is a ground potential.
9. The integrated circuit device of claim 1 , wherein:
a resistor having a first terminal electrically connected to the output terminal of the output buffer circuit and a second terminal electrically connected to the first ESD protection circuit structure.
10. The integrated circuit device of claim 1 , wherein:
the first diode including at least four substantially horizontally disposed current carrying regions that are substantially vertically aligned.
11. The integrated circuit device of claim 10 , wherein:
each substantially horizontally disposed current carrying region forms a p-n junction diode.
12. The integrated circuit device of claim 1 , further including:
an internal circuit including at least one IGFET including a plurality of substantially horizontally disposed channels that are substantially vertically aligned, the internal circuit coupled between a first power supply potential and a second power supply potential; and
a second ESD protection circuit structure coupled between the first power supply potential and the second power supply potential.
13. The integrated circuit device of claim 12 , wherein:
the second ESD circuit structure includes a SCR circuit.
14. The integrated circuit device of claim 12 , wherein:
the internal circuit is not electrically connected to receive an externally provided signal.
15. An integrated circuit device, comprising:
an output buffer circuit having an input terminal coupled to receive an input signal and an output terminal coupled to provide an output signal, the output buffer circuit including at least one insulated gate field effect transistor (IGFET);
a first electrostatic discharge (ESD) protection circuit structure coupled to the output terminal;
an internal circuit including at least one IGFET, the internal circuit coupled between a first power supply potential and a second power supply potential; and
a second ESD protection circuit structure coupled between the first power supply potential and the second power supply potential
wherein the output signal is provided external to the integrated circuit device and the first ESD protection circuit structure includes a diode, the diode including at least three substantially horizontally disposed current carrying regions that are substantially vertically aligned.
16. The integrated circuit device of claim 15 , wherein:
each substantially horizontally disposed current carrying region forms a p-n junction diode.
17. The integrated circuit device of claim 15 , wherein:
the diode includes an anode terminal electrically connected to the first power supply potential and a cathode terminal electrically connected to the output terminal and the first power supply potential is a ground potential.
18. The integrated circuit device of claim 17 , wherein:
the internal circuit includes a p-type IGFET including a plurality of substantially horizontally disposed channels that are substantially vertically aligned and an n-type IGFET including at least three horizontally disposed channels that are substantially vertically aligned.
19. The integrated circuit device of claim 18 , wherein:
the p-type IGFET and n-type IGFET are configured as an inverter circuit.
20. The integrated circuit device of claim 15 , wherein:
a semiconductor substrate providing a first region;
a second region formed over the first region;
the at least one IGFET of the internal circuit is formed in the second region; and
the second ESD protection circuit structure is substantially formed within the first region.