Optical semiconductor device
An optical semiconductor device includes a substrate, a semiconductor multilayer which is formed on the substrate, and includes an optical functional layer, an insulating film formed on the semiconductor multilayer, and an electrode formed on a part of the insulating film. The insulating film covers the semiconductor multilayer except for a region in which the semiconductor multilayer and the electrode are electrically connected to each other. At least a part of a region of the insulating film that is overlapped with the electrode is thinner than a region of the insulating film that is not overlapped with the electrode.
1. An optical semiconductor device, comprising:
a substrate;
a semiconductor multilayer which is formed on the substrate, and includes an optical functional layer;
an insulating film formed on the semiconductor multilayer; and
an electrode formed on a part of the insulating film,
wherein the insulating film covers the semiconductor multilayer except for a region in which the semiconductor multilayer and the electrode are electrically connected to each other,
wherein at least a part of a region of the insulating film that is over the semiconductor multilayer and overlapped with the electrode is thinner than a region of the insulating film that is over the semiconductor multilayer and not overlapped with the electrode, and
wherein the at least the part of the region of the insulating film that is overlapped with the electrode is proximate to and located above the semiconductor multilayer.
2. The optical semiconductor device according to claim 1 , wherein a first region of the insulating film is overlapped with a part of an end portion of the electrode.
3. The optical semiconductor device according to claim 1 , wherein the insulating film is integrally formed of a single material.
4. The optical semiconductor device according to claim 1 , wherein the insulating film includes a first insulating layer formed in the at least the part of the region and a second insulating layer formed in another region with a material different from a material for the first insulating layer.
5. The optical semiconductor device according to claim 4 , wherein the first insulating layer is arranged in the region of the insulation film that is over the semiconductor multilayer and not overlapped with the electrode.
6. The optical semiconductor device according to claim 5 , wherein the first insulating layer arranged in the region of the insulating film that is over the semiconductor multilayer and not overlapped with the electrode is arranged under the second insulating layer.
7. The optical semiconductor device according to claim 5 , wherein the first insulating layer is arranged on the second insulating layer.
8. The optical semiconductor device according to claim 7 , wherein the first insulating layer is arranged on the second insulating layer in an end portion of the electrode.
9. The optical semiconductor device according to claim 1 , wherein the semiconductor multilayer includes a stripe structure and a buried layer formed on each side of the stripe structure.
10. The optical semiconductor device according to claim 4 ,
wherein the semiconductor multilayer includes a stripe structure, and
wherein the first insulating layer is arranged on each side surface of the stripe structure.
11. The optical semiconductor device according to claim 10 , wherein the second insulating layer is arranged between the side surface of the stripe structure and the first insulating layer in a portion of the side surface of the stripe structure.
12. The optical semiconductor device according to claim 1 , wherein the at least the part of the region includes one of a silicon nitride film or an aluminum oxide film.
13. The optical semiconductor device according to claim 1 , wherein a thick region of the insulating film includes a silicon oxide film.
14. A method of forming an optical semiconductor device, comprising:
forming a semiconductor multilayer on a substrate, the semiconductor multilayer including an optical functional layer;
forming an insulating film on the semiconductor multilayer; and
forming an electrode on a part of the insulating film,
wherein the insulating film covers the semiconductor multilayer except for a region in which the semiconductor multilayer and the electrode are electrically connected to each other,
wherein at least a part of a region of the insulating film that is overlapped with the electrode is thinner than another region of the insulating film that is not overlapped with the electrode, and
wherein the at least the part of the region of the insulating film that is overlapped with the electrode is proximate to and located above the semiconductor multilayer.
15. The method of claim 14 , wherein another region of the insulating film is overlapped with a part of an end portion of the electrode.
16. The method of claim 14 , wherein the insulating film is integrally formed of a single material.
17. The method of claim 14 , wherein forming the insulating film comprises:
forming a first insulating layer in the at least the part of the region; and
forming a second insulating layer in the other region with a material different from a material for the first insulating layer.
18. The method of claim 17 , wherein forming the first insulating layer comprises:
forming the first insulating layer in the other region.
19. The method of claim 18 , wherein forming the second insulating layer comprises:
forming the second insulating layer on the first insulating layer.
20. The method of claim 18 , wherein forming the first insulating layer comprises:
forming the first insulating layer on the second insulating layer.