IP Library Granted Patent US 12,237,589
Granted Patent B2
US 12,237,589 · App. 17/734,529 · Granted Feb 25, 2025

Wireless communication technology, apparatuses, and methods

Inventors: Erkan Alpman (Portland, OR); Arnaud Lucres Amadjikpe (Beaverton, OR); Omer Asaf (Oranit, IL); Kameran Azadet (San Ramon, CA); Rotem Banin (Even-Yehuda, IL); Miroslav Baryakh (Petach Tikva, IL); Anat Bazov (Petach-Tikva, IL); Stefano Brenna (Hillsboro, OR); Bryan K. Casper (Portland, OR); Anandaroop Chakrabarti (Beaverton, OR); Gregory Chance (Chandler, AZ); Debabani Choudhury (Thousand Oaks, CA); Emanuel Cohen (Zichron Yaacov, IL); Claudio Da Silva (Portland, OR); Sidharth Dalmia (Fair Oaks, CA); Saeid Daneshgar Asl (Portland, OR); Kaushik Dasgupta (Hillsboro, OR); Kunal Datta (Los Angeles, CA); Brandon Davis (Phoenix, AZ); Ofir Degani (Haifa, IL); Amr M. Fahim (Portland, OR); Amit Freiman (Haifa, IL); Michael Genossar (Modiin, IL); Eran Gerson (Pardes Hana, IL); Eyal Goldberger (Moshav Beherotaim, IL); Eshel Gordon (Aloney Aba, IL); Meir Gordon (Holon, IL); Josef Hagn (Neubiberg, DE); Shinwon Kang (San Francisco, CA); Te Yu Kao (San Jose, CA); Noam Kogan (Tel-Aviv, IL); Mikko S. Komulainen (Oulu, FI); Igal Yehuda Kushnir (Hod-Hasharon, IL); Saku Lahti (Tampere, FI); Mikko M. Lampinen (Nokia, FI); Naftali Landsberg (Ramat Gan, IL); Wook Bong Lee (San Jose, CA); Run Levinger (Tel Aviv, IL); Albert Molina (Alcobendas, ES); Resti Montoya Moreno (Helsinki, FI); Tawfiq Musah (Hillsboro, OR); Nathan G. Narevsky (Portland, OR); Hosein Nikopour (San Jose, CA); Oner Orhan (San Jose, CA); Georgios Palaskas (Portland, OR); Stefano Pellerano (Beaverton, OR); Ron Pongratz (Tel Aviv, IL); Ashoke Ravi (Portland, OR); Shmuel Ravid (Haifa, IL); Peter Andrew Sagazio (Portland, OR); Eren Sasoglu (Mountain View, CA); Lior Shakedd (Kfar Bilu, IL); Gadi Shor (Tel Aviv, IL); Baljit Singh (San Jose, CA); Menashe Soffer (Katzir, IL); Ra'anan Sover (Haifa, IL); Shilpa Talwar (Cupertino, CA); Nebil Tanzi (Hoffman Estates, IL); Moshe Teplitsky (Tel-Aviv, IL); Chintan S. Thakkar (Portland, OR); Jayprakash Thakur (Bangalore, IN); Avi Tsarfati (Rishon le Zion, IL); Yossi Tsfati (Rishon le Zion, IL); Marian Verhelst (Portland, OR); Nir Weisman (Hod Hasharon, IL); Shuhei Yamada (Hillsboro, OR); Ana M. Yepes (Portland, OR); Duncan Kitchin (Beaverton, OR)
Assignee: Intel Corporation
H01Q9/0414H01Q1/243H01Q1/38H01Q1/48H01Q3/24H01Q5/47H01Q21/24H03L7/145H04B1/3827H04B7/0482H04B7/0639H04B15/04
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Quick Facts
Patent No.
US 12,237,589
App. No.
17/734,529
Granted
Feb 25, 2025
Kind
B2
Abstract

Millimeter wave (mmWave) technology, apparatuses, and methods that relate to transceivers, receivers, and antenna structures for wireless communications are described. The various aspects include co-located millimeter wave (mmWave) and near-field communication (NFC) antennas, scalable phased array radio transceiver architecture (SPARTA), phased array distributed communication system with MIMO support and phase noise synchronization over a single coax cable, communicating RF signals over cable (RFoC) in a distributed phased array communication system, clock noise leakage reduction, IF-to-RF companion chip for backwards and forwards compatibility and modularity, on-package matching networks, 5G scalable receiver (Rx) architecture, among others.

Claims (31)

1. A low-loss radio subsystem, comprising:

at least one silicon die configured to include electronic circuits operable to generate electronic signals for operation of a predetermined number of antennas;

a laminar substrate comprising a plurality of parallel layers, wherein the at least one silicon die is embedded between a first layer and a second layer of the plurality of parallel layers of the laminar substrate;

the predetermined number of antennas comprising at least a first antenna configured on or within the first layer and at least a second antenna configured on or within the second layer of the laminar substrate; and

a conductive signal feed structure connected between the at least one silicon die and the predetermined number of antennas and configured to feed the electronic signals to the predetermined number of antennas.

2. The low-loss radio subsystem of claim 1 , wherein the at least one silicon die includes a plurality of embedded silicon dies and the predetermined number of antennas includes a plurality of respective predetermined numbers of antennas, and wherein the conductive signal feed structure includes a plurality of signal feed traces connected to respective ones of the plurality of embedded silicon dies and to respective ones of the plurality of respective predetermined numbers of antennas.

3. The low-loss radio subsystem of claim 1 , wherein the laminar substrate includes a plurality of densely packed contacts respectively surrounding the at least one silicon die and arranged to provide a radio frequency interference (RFI) and electromagnetic interference (EMI) shield for the at least one silicon die.

4. The low-loss radio subsystem of claim 3 , wherein the at least one silicon die includes a plurality of embedded silicon dies and the laminar substrate includes pluralities of densely packed contacts each of the pluralities surrounding a respective one of the plurality of embedded silicon dies and arranged to provide respective RFI and EMI shields for the respective ones of the plurality of embedded silicon dies.

5. The low-loss radio subsystem of claim 4 , wherein the plurality of embedded silicon dies are coupled with each other and arranged to be controlled by a plurality of software instructions executed by a central processing unit.

6. The low-loss radio subsystem of claim 5 , wherein the laminar substrate is stacked upon and physically connected to a second laminar substrate that includes a second plurality of second respective predetermined numbers of second antennas, wherein the second laminar substrate includes a second plurality of embedded silicon dies each arranged to include electronic circuits operable to generate primarily only electronic signals for operation of ones of the second plurality of second respective predetermined numbers of antennas, and a plurality of feed traces connected to respective ones of the second plurality of second respective predetermined numbers of second antennas.

7. The low-loss radio subsystem of claim 6 , wherein the laminar substrate is parallel to the second laminar substrate or perpendicular to the second laminar substrate.

8. The low-loss radio subsystem of claim 7 , wherein a first of the plurality of embedded silicon dies generates signals in a first frequency range and a second of the plurality of embedded silicon dies generates signals in a second frequency range.

9. The low-loss radio subsystem of claim 8 , wherein the first frequency range includes millimeter-wave frequencies, and the second frequency range comprises microwave frequencies.

10. The low-loss radio subsystem of claim 9 , wherein at least some of the antennas are configured for operation at the millimeter-wave frequencies and at least some of the antennas are configured for operation at the microwave frequencies.

11. A wireless communication device comprising:

a low-loss radio subsystem; and

a plurality of antennas coupled to the low-loss radio subsystem,

wherein the low-loss radio subsystem comprises:

at least one silicon die configured to include electronic circuits operable to generate electronic signals for operation of a predetermined number of antennas of the plurality;

a laminar substrate comprising a plurality of parallel layers, wherein the at least one silicon die is embedded between a first layer and a second layer of the plurality of parallel layers of the laminar substrate;

the predetermined number of antennas comprising at least a first antenna configured on or within the first layer and at least a second antenna configured on or within the second layer of the laminar substrate; and

a conductive signal feed structure connected between the at least one silicon die and the predetermined number of antennas and configured to feed the electronic signals to the predetermined number of antennas.

12. The wireless communication device of claim 11 , wherein the at least one silicon die includes a plurality of embedded silicon dies and the predetermined number of antennas includes a plurality of respective predetermined numbers of antennas, and wherein the conductive signal feed structure includes a plurality of signal feed traces connected to respective ones of the plurality of embedded silicon dies and to respective ones of the plurality of respective predetermined numbers of antennas.

13. The wireless communication device of claim 11 , wherein the laminar substrate includes a plurality of densely packed contacts respectively surrounding the at least one silicon die and arranged to provide a radio frequency interference (RFI) and electromagnetic interference (EMI) shield for the at least one silicon die.

14. The wireless communication device of claim 13 , wherein the at least one silicon die includes a plurality of embedded silicon dies and the laminar substrate includes pluralities of densely packed contacts each of the pluralities surrounding a respective one of the plurality of embedded silicon dies and arranged to provide respective RFI and EMI shields for the respective ones of the plurality of embedded silicon dies.

15. The wireless communication device of claim 14 , wherein the plurality of embedded silicon dies are coupled with each other and arranged to be controlled by a plurality of software instructions executed by a central processing unit.

16. The wireless communication device of claim 15 , wherein the laminar substrate is stacked upon and physically connected to a second laminar substrate that includes a second plurality of second respective predetermined numbers of second antennas, wherein the second laminar substrate includes a second plurality of embedded silicon dies each arranged to include electronic circuits operable to generate primarily only electronic signals for operation of ones of the second plurality of second respective predetermined numbers of antennas, and a plurality of feed traces connected to respective ones of the second plurality of second respective predetermined numbers of second antennas.

17. The wireless communication device of claim 16 , wherein the laminar substrate is parallel to the second laminar substrate or perpendicular to the second laminar substrate.

18. The wireless communication device of claim 17 , wherein a first of the plurality of embedded silicon dies generates signals in a first frequency range and a second of the plurality of embedded silicon dies generates signals in a second frequency range.

19. The wireless communication device of claim 18 , wherein the first frequency range includes millimeter-wave frequencies, and the second frequency range comprises microwave frequencies.

20. The wireless communication device of claim 19 , wherein at least some of the antennas are configured for operation at the millimeter-wave frequencies and at least some of the antennas are configured for operation at the microwave frequencies.