Deposition process for molybdenum or tungsten materials
Provided is a process for the rapid deposition of highly conformal molybdenum- or tungsten-containing films onto microelectronic device substrates under vapor deposition conditions. In the practice of the invention, a first nucleation step is conducted, while utilizing a generally lower concentration of metal precursor than would ordinarily be utilized in the reaction zone. This utilization of lower metal precursor concentrations can be achieved by way of regulating the temperature of the ampoule (housing the precursor), the concentration of the precursor, pressure in the reaction zone, and the duration of the pulse. In this fashion, a generally lower concentration is utilized to form a nucleation layer of greater than or equal to about 3 Å, or up to about 9, 15, or 25 Å, at which time, the conditions for introducing the precursor are advantageously changed and the concentration of the precursor in the reaction zone is increased for the purpose of bulk deposition.
1. A process for the vapor deposition of a molybdenum or tungsten-containing film onto a surface, comprising:
introducing into a reaction zone containing the surface, a precursor at a first precursor concentration and a reducing gas until a film has a thickness of about 3 Å to about 25 Å has been deposited on the surface;
introducing into the reaction zone, the precursor at a second precursor concentration and a reducing gas, until deposition of the film having a desired thickness is achieved, and
wherein the first precursor concentration is about 1 to about 75 percent to the second precursor concentration in the reaction zone and wherein the film with a thickness of about 3 Å to about 25 Å is deposited with a smooth surface morphology.
2. The process of claim 1 , wherein the first precursor concentration is about 10 to about 50 percent of the second precursor concentration.
3. The process of claim 1 , wherein the surface is chosen from nitrides, oxides, metals, semiconductors, and superconductors.
4. A process for the vapor deposition of a molybdenum or tungsten-containing film onto the surface of a microelectronic device in a reaction zone, the reaction zone operated at a pressure of about 1 to about 1000 Torr and a temperature of about 300° C. to about 1000° C.; wherein the surface is chosen from nitrides, oxides, metals, semiconductors, and superconductors, which comprises:
a. repeatedly introducing into a reaction zone containing the surface, a molybdenum or tungsten precursor in a pulse for a duration of about 0.1 to about 120 seconds followed by a pause of about 1 to about 120 seconds, wherein a first precursor concentration in the reaction zone is about 1 to about 5000 ppm at its peak, while continuously introducing into the reaction zone a reducing gas, until a film having a thickness of about 3 Å to about 25 Å has been deposited with a smooth surface morphology, and
b. repeatedly introducing into a reaction zone containing the surface, the molybdenum or tungsten precursor in a pulse for a duration of about 0.1 to about 120 seconds, thereby reaching a second precursor concentration, followed by a pause of about 1 to about 120 seconds; wherein the second precursor concentration is about 1.3 to about 100 times the first precursor concentration, while continuously introducing into the reaction zone a reducing gas, until a film having a desired thickness has been deposited.
5. The process of claim 4 , wherein the precursor is chosen from WCl 6 , WCl 5 , WOCl 4 , MoO 2 Cl 2 , MoCl 5 , and MoOCl 4 .
6. The process of claim 4 , wherein the precursor is MoO 2 Cl 2 .
7. The process of claim 4 , wherein the pressure in the reaction zone is about 20 to about 200 Torr.
8. The process of claim 4 , wherein the first precursor concentration is about 20 to about 500 ppm.
9. The process of claim 4 , wherein the temperature in the reaction zone is about 350° to 500° C.
10. A process for the vapor deposition of a molybdenum or tungsten-containing film onto a surface of a microelectronic device in a reaction zone, the reaction zone operated at a pressure of about 1 to about 1000 Torr and a temperature of about 300° C. to about 1000° C.;
wherein the surface is chosen from nitrides, oxides, metals, semiconductors, and superconductors, which comprises:
a. continuously introducing into a reaction zone containing the surface, a molybdenum or tungsten precursor, wherein a first precursor concentration in the reaction zone is about 1 to about 5000 ppm at its peak, while continuously introducing into the reaction zone a reducing gas until a film having a thickness of about 3 Å to about 25 Å has been deposited with a smooth surface morphology, and
b. continuously introducing into a reaction zone containing the surface, the molybdenum or tungsten precursor, thereby reaching a second precursor concentration, wherein the second precursor concentration in the reaction zone is about 1.3 to about 100 times the first precursor concentration, while continuously introducing into the reaction zone a reducing gas, until a film having a desired thickness has been deposited.
11. The process of claim 10 , wherein the precursor is chosen from WCl 6 , WCl 5 , WOCl 4 , MoO 2 Cl 2 , MoCl 5 , and MoOCl 4 .
12. The process of claim 10 , wherein the precursor is MoO 2 Cl 2 .
13. The process of claim 10 , wherein the pressure in the reaction zone is about 20 to about 200 Torr.
14. The process of claim 10 , wherein the first precursor concentration is about 20 to about 500 ppm.
15. The process of claim 10 , wherein the temperature in the reaction zone is about 350° to 500° C.