Metallization of solar cells with differentiated p-type and n-type region architectures
Methods of fabricating solar cell emitter regions with differentiated P-type and N-type region architectures, and resulting solar cells, are described. In an example a solar cell includes a first emitter region of a first conductivity type disposed on a first dielectric region, the first dielectric region disposed on a surface of a substrate. A second dielectric region is disposed laterally adjacent to the first and second emitter region. The second emitter region of a second, different, conductivity type is disposed on a third dielectric region, the third dielectric region disposed on the surface of the substrate, over the second dielectric region, and partially over the first emitter region. A first metal foil is disposed over the first emitter region. A second metal foil is disposed over the second emitter region.
1. A method of fabricating a solar cell, the method comprising:
forming a first emitter region of a first conductivity type on a first dielectric region formed on a surface of a substrate, the first emitter region having an insulating cap thereon;
forming a second dielectric region adjacent to exposed sides of the first emitter region;
forming a second emitter region of a second, different, conductivity type on a third dielectric region formed on the surface of the substrate, and over the second dielectric region and the insulating cap of the first emitter region;
forming a contact opening in the second emitter region and in the insulating cap, wherein the contact opening exposes a portion of the first emitter region;
forming a metal region over the first and second emitter regions, the metal region comprising a metal foil; and
patterning the metal region and the second emitter region to form a first metal contact comprising a first metal foil portion in the contact opening and coupled to the portion of the first emitter region and a second metal contact comprising a second metal foil portion coupled to the second emitter region.
2. The method of claim 1 , wherein patterning the metal region and second emitter region comprises performing a wet etching process to pattern the metal region and second emitter region.
3. The method of claim 2 , wherein performing the wet etching process to pattern the metal region and second emitter region comprises performing the wet etching process using an alkaline etchant to etch the metal region and second emitter region.
4. The method of claim 1 , wherein prior to forming the metal region, forming a metal seed region over the second emitter region, wherein the patterning the metal region and the second emitter region includes patterning the metal seed region.
5. The method of claim 4 , further comprising bonding the metal region to the metal seed region.
6. The method of claim 1 , wherein the first and second emitter region are formed as amorphous silicon regions, the method further comprising:
annealing a first and second amorphous silicon regions to form first and second polysilicon emitter regions, respectively.
7. A method of fabricating a solar cell, the method comprising:
forming a first emitter region of a first conductivity type on a first dielectric region formed on a surface of a substrate;
forming an insulating region on the first emitter region;
patterning the insulating region and the first emitter region to form a first emitter region of the first conductivity type having an insulating cap thereon;
forming a second dielectric region adjacent to exposed sides of the first emitter region;
forming a second emitter region of a second, different, conductivity type on a third dielectric region formed on the surface of the substrate, and over the second dielectric region and the insulating cap of the first emitter region;
forming a contact opening in the second emitter region and in the insulating cap, wherein the contact opening exposes a portion of the first emitter region;
forming a metal region over the first and second emitter region, the metal region comprising a metal foil; and
laser ablating through the metal region and the second emitter region to form a first metal contact comprising a first metal foil portion in the contact opening and coupled to the portion of the first emitter region and a second metal contact comprising a second metal foil portion coupled to the second emitter region.
8. The method of claim 7 , wherein laser ablating through the metal region and second emitter region comprises ablating a portion of the insulating cap.
9. The method of claim 7 , wherein prior to forming the metal region, forming a metal seed region over the second emitter region, wherein the laser ablating through the metal region and the second emitter region includes laser ablating the metal seed region.
10. The method of claim 9 , further comprising bonding the metal region to the metal seed region.
11. The method of claim 10 , wherein the bonding comprises a method selected from the group consisting of plating, soldering, using an adhesive, laser welding, ultrasonic process and thermo-compression process.
12. The method of claim 10 , wherein the laser ablating and the bonding are performed using the same laser.
13. The method of claim 7 , wherein the laser ablating comprises using an infra-red (IR) laser.
14. The method of claim 7 , wherein the laser ablating comprises using a laser having a wavelength greater than 155 nm.