Display panel and display device
A display panel and a display device. The display panel includes a test circuit located in a non-display region. The test circuit includes a plurality of switching transistors and at least one data switching line extending in a first direction. In each switching transistor, a first end of the switching transistor is electrically connected to a data line in the display panel, and a second end of the switching transistor is configured to receive a test data signal. The data switching line is disposed in the same layer as a source-drain layer of the switching transistor. The data switching line is configured to control the switching transistor to be turned on or off.
1. A display panel, comprising a test circuit located in a non-display region, wherein the test circuit comprises:
a plurality of switching transistors, wherein a first end of each switching transistor is electrically connected to a data line in the display panel, and a second end of each switching transistor is configured to receive a test data signal;
a data switching line extending in a first direction, wherein the data switching line is disposed in a same layer as a source-drain layer of each switching transistor, and the data switching line is configured to control each switching transistor to be turned on or off; and
a via hole connected to an active layer on which the switching transistors are located, wherein a distance provided between the data switching line and the via hole in a second direction is greater than 4 microns, wherein the second direction is perpendicular to the first direction,
wherein a vertical projection of the data switching line on a plane of the active layer overlaps the active layer, and a portion of the data switching line corresponding to an overlapping region of the vertical projection is a gate electrode of the switching transistors.
2. The display panel according to claim 1 , wherein the active layer comprises a heavily doped region, and a first lightly doped region and a second lightly doped region located on two sides of the heavily doped region; and in response to an action of a control signal of the data switching line, the first lightly doped region is in a conduction with the second lightly doped region.
3. The display panel according to claim 1 , wherein the distance between the data switching line and the via hole in the second direction is less than 16 microns.
4. The display panel according to claim 1 , wherein the test circuit further comprises a test pad, and the data switching line is electrically connected to the test pad.
5. The display panel according to claim 1 , wherein a material of the data switching line is titanium aluminum titanium (Ti/Al/Ti).
6. The display panel according to claim 1 , wherein the second ends of the plurality of switching transistors are electrically connected to a same test pad.
7. The display panel according to claim 1 , wherein the second ends of the plurality of switching transistors are electrically connected to different test pads.
8. The display panel according to claim 1 , wherein the via hole is provided in the switching transistor, and the via hole connects the active layer with a source of the switching transistor or a drain of the switching transistor.
9. The display panel according to claim 1 , further comprising a third via hole, wherein one end of the third via hole is electrically connected to the data switching line, and another end of the third via hole is connected to a side of a gate insulating layer of the switching transistor close to the data switching line.
10. The display panel according to claim 1 , wherein the distance between the data switching line and the via hole in the second direction is greater than 13 microns.
11. A display device, comprising the display panel according to claim 1 .