Semiconductor device and switching power supply
A semiconductor device includes: an operational amplifier; an external terminal configured to be attached to an external capacitor; and a resistor configured to be connected between a node, to which an output terminal and an inverting input terminal of the operational amplifier are connected in common, and the external terminal.
1. A semiconductor device comprising:
an operational amplifier;
an external terminal configured to be attached to an external capacitor; and
a resistor configured to be connected between a node, to which an output terminal and an inverting input terminal of the operational amplifier are connected in common, and the external terminal,
wherein the operational amplifier includes an output stage configured by using a source follower or an emitter follower,
wherein the output stage includes:
an output transistor configured to form the source follower or the emitter follower;
a first current source configured to generate a source current flowing into the node via the output transistor; and
a second current source configured to generate a sink current drawn from the node,
wherein the source current has a variable value that changes from a minimum value to a maximum value according to a conductivity of the output transistor, and
wherein the sink current has a fixed value that is larger than the minimum value of the source current and is smaller than the maximum value of the source current.
2. The semiconductor device of claim 1 , wherein the operational amplifier further includes
an input stage configured by using a folded cascode circuit.
3. The semiconductor device of claim 2 , wherein the operational amplifier further includes a phase compensator configured to be provided between an output terminal of the input stage and an input terminal of the output stage.
4. The semiconductor device of claim 1 , wherein when an absolute value of a difference obtained by subtracting the sink current from the maximum value of the source current is |Iso|, a relationship of Vslp 1 =Rx×|Iso| is established, where Vslp 1 denotes an amount of change of a voltage generated in the external terminal while the source current decreases from the maximum value to the same value as the sink current, and where Rx denotes a resistance value of the resistor.
5. The semiconductor device of claim 1 , wherein when an absolute value of a difference obtained by subtracting the sink current from the minimum value of the source current is |Isi|, a relationship of Vslp 2 =Rx×|Isi| is established, where Vslp 2 denotes an amount of change of a voltage generated in the external terminal while the source current decreases from the same value as the sink current to the minimum value, and where Rx denotes a resistance value of the resistor.
6. The semiconductor device of claim 1 , wherein a terminal voltage appearing at the external terminal is used as an internal reference voltage.
7. The semiconductor device of claim 6 , further comprising an output feedback control circuit configured to drive and control a switching output stage so that a feedback voltage according to an output voltage of a switching power supply matches the internal reference voltage.
8. A switching power supply comprising:
the conductor device of claim 7 ; and
the switching output stage configured to generate the output voltage from an input voltage.