Semiconductor device for RF integrated circuit
In order to reduce costs as well as to effectively dissipate heat in certain RF circuits, a semiconductor device of the circuit can include one or more active devices such as transistors, diodes, and/or varactors formed of a first semiconductor material system integrated onto (e.g., bonded to) a base substrate formed of a second semiconductor material system that includes other circuit components. The first semiconductor material system can, for example, be the III-V or III-N semiconductor system, and the second semiconductor material system can, for example be silicon.
1. A semiconductor device, comprising:
a base substrate, comprising:
a substrate layer comprising a semiconductor or insulator material, the substrate layer having a front side and a back side opposite the front side;
a first plurality of vias that each extend through an entirety of the thickness of the substrate layer;
a first metal material and an isolation material in each via of the first plurality of vias, wherein the isolation material is between the first metal material and the substrate layer;
a backside metal material overlying the back side of the substrate layer and contacting the first metal material in each via of the first plurality of vias; and
an interconnect metal on the front side of the substrate layer; and
a transistor connected to the base substrate, the transistor comprising:
a III-N material structure, comprising:
a III-N barrier layer;
a III-N channel layer on an N-face of the III-N barrier layer, wherein the III-N barrier layer has a larger bandgap than the III-N channel layer; and
a 2DEG channel in the III-N channel layer adjacent to the interface between the III-N channel layer and the III-N barrier layer; and
a plurality of contacts, the plurality of contacts comprising a source contact, a drain contact, and a gate contact, wherein the source, gate, and drain contacts are on an opposite side of the III-N channel layer from the III-N barrier layer, and the source and drain contacts are electrically connected to the 2DEG channel; wherein
the transistor is over the front side of the base substrate such that the substrate layer of the base substrate is between the backside metal and the transistor, and the first metal material in a first via of the first plurality of vias is electrically connected to a first contact of the plurality of contacts by one or more bonding materials.
2. The semiconductor device of claim 1 , wherein at least one of the one or more bonding materials comprises gold, silver, copper, and indium containing compound, a tin containing compound, AuSn, AuSi, CuSn, AuGe, AlGe, AlSi, or a combination thereof.
3. The semiconductor device of claim 1 , wherein the one or more bonding materials is directly between the first contact and the first metal material.
4. The semiconductor device of claim 1 , wherein the first contact is the source contact.
5. The semiconductor device of claim 1 , wherein the base substrate further comprises a second plurality of vias that each extend partially through the substrate layer without extending through an entirety of the thickness of the substrate layer.
6. The semiconductor device of claim 5 , wherein the base substrate further comprises the first metal material in each via of the second plurality of vias.
7. The semiconductor device of claim 6 , wherein a second via of the second plurality of vias is directly beneath a second contact of the plurality of contacts.
8. The semiconductor device of claim 1 , wherein the isolation material has a lower thermal conductivity than the semiconductor or insulator material of the substrate layer.
9. The semiconductor device of claim 1 , wherein the isolation material electrically isolates the first metal material from the substrate layer.
10. The semiconductor device of claim 1 , further comprising a circuit element connected to the base substrate, wherein the circuit element is selected from the group consisting of a capacitor, an inductor, a transformer, a resistor, a waveguide, an antenna, an electrical resonator, an acoustic component, a piezoelectric component, a diode, and a silicon-based transistor.
11. A semiconductor device, comprising:
a base substrate, comprising:
a substrate layer comprising a semiconductor or insulator material, the substrate layer having a front side and a back side opposite the front side;
a first plurality of vias that each extend through an entirety of the thickness of the substrate layer;
a first metal material and an isolation material in each via of the first plurality of vias, wherein the isolation material is between the first metal material and the substrate layer;
a backside metal material overlying the back side of the substrate layer and contacting the first metal material in each via of the first plurality of vias; and
an interconnect metal on the front side of the substrate layer; and
a transistor connected to the base substrate, the transistor comprising:
a III-N material structure, comprising:
a III-N barrier layer;
a III-N channel layer on an N-face of the III-N barrier layer, wherein the III-N barrier layer has a larger bandgap than the III-N channel layer; and
a 2DEG channel in the III-N channel layer adjacent to the interface between the III-N channel layer and the III-N barrier layer;
a plurality of contacts, the plurality of contacts comprising a source contact, a drain contact, and a gate contact, wherein the source, gate, and drain contacts are on an opposite side of the III-N channel layer from the III-N barrier layer, and the source and drain contacts are electrically connected to the 2DEG channel; and
a thermal contact that is thermally coupled to the III-N material structure and electrically isolated from the 2DEG channel; wherein
the transistor is over the front side of the base substrate such that the substrate layer of the base substrate is between the backside metal and the transistor, and the first metal material in a first via of the first plurality of vias is electrically connected to the thermal contact of the transistor.
12. The semiconductor device of claim 11 , wherein the base substrate further comprises a second plurality of vias that each extend partially through the substrate layer without extending through an entirety of the thickness of the substrate layer.
13. The semiconductor device of claim 12 , wherein the base substrate further comprises the first metal material in each via of the second plurality of vias.
14. The semiconductor device of claim 13 , wherein a second via of the second plurality of vias is directly beneath a second contact of the plurality of contacts.
15. The semiconductor device of claim 11 , further comprising a circuit element connected to the base substrate, wherein the circuit element is selected from the group consisting of a capacitor, an inductor, a transformer, a resistor, a waveguide, an antenna, an electrical resonator, an acoustic component, a piezoelectric component, a diode, and a silicon-based transistor.
16. A semiconductor device, comprising:
a base substrate, comprising:
a substrate layer comprising a semiconductor or insulator material, the substrate layer having a front side and a back side opposite the front side;
a first plurality of vias that each extend through an entirety of the thickness of the substrate layer;
a first metal material and an isolation material in each via of the first plurality of vias, wherein the isolation material is between the first metal material and the substrate layer;
a backside metal material overlying the back side of the substrate layer and contacting the first metal material in each via of the first plurality of vias; and
an interconnect metal on the front side of the substrate layer; and
a transistor connected to the base substrate, the transistor, comprising:
a III-N material structure, comprising:
a III-N barrier layer;
a III-N channel layer on an N-face of the III-N barrier layer, wherein the III-N barrier layer has a larger bandgap than the III-N channel layer; and
a 2DEG channel in the III-N channel layer adjacent to the interface between the III-N channel layer and the III-N barrier layer; and
a plurality of contacts, the plurality of contacts comprising a source contact, a drain contact, and a gate contact, wherein the source, gate, and drain contacts are on an opposite side of the III-N channel layer from the III-N barrier layer, and the source and drain contacts are electrically connected to the 2DEG channel; wherein
the transistor is over the front side of the base substrate such that the substrate layer of the base substrate is between the backside metal and the transistor; and
a first end of an impedance element is electrically connected to a first contact of the plurality of contacts, and a second end of the impedance element is electrically connected to the first metal material.
17. The semiconductor device of claim 16 , further comprising a second transistor, the second transistor comprising:
a second III-N barrier layer;
a second III-N channel layer on an N-face of the second III-N barrier layer, wherein the second III-N barrier layer has a larger bandgap than the second III-N channel layer;
a second 2DEG channel in the second III-N channel layer adjacent to the interface between the second III-N channel layer and the second III-N barrier layer; and
a second plurality of contacts, the second plurality of contacts comprising a second source contact, a second drain contact, and a second gate contact, wherein the second source contact, the second gate contact, and the second drain contact are each on an opposite side of the second III-N channel layer from the second III-N barrier layer, and the second source and second drain contacts are electrically connected to the second 2DEG channel; wherein
the second transistor is connected to the base substrate at least in part by the one or more bonding materials, the one or more bonding materials further being directly between a second contact of the second plurality of contacts and the first metal material in a second via of the first plurality of vias.
18. The semiconductor device of claim 16 , wherein the substrate layer comprises a material selected from the group consisting of silicon, gallium arsenide, silicon carbide, sapphire, germanium, indium phosphide, silicon oxide, and aluminum nitride.
19. The semiconductor device of claim 16 , wherein the interconnect metal directly contacts the first metal material in the first via of the first plurality of vias.
20. The semiconductor device of claim 16 , wherein the plurality of contacts of the transistor is between the III-N channel layer and the base substrate.