Thin film stacks for group V doping, photovoltaic devices including the same, and methods for forming photovoltaic devices with thin film stacks
According to the embodiments provided herein, a method for forming a photovoltaic device can include depositing a plurality of semiconductor layers. The plurality of semiconductor layers can include a doped layer that is doped with a group V dopant. The doped layer can include cadmium selenide or cadmium telluride. The method can include annealing the plurality of semiconductor layers to form an absorber layer.
1. A photovoltaic device comprising:
a buffer layer having a first surface facing an energy side of the photovoltaic device and a second surface facing an opposing side of the photovoltaic device; and
an absorber layer provided upon the second surface of the buffer layer, wherein:
the buffer layer comprises at least one of: intrinsic tin dioxide, zinc magnesium oxide, silicon dioxide, aluminum oxide, or aluminum nitride,
the absorber layer is adjacent to the buffer layer at the second surface of the buffer layer,
the absorber layer comprises cadmium, selenium, and tellurium,
the absorber layer is p-type,
the absorber layer is formed from a plurality of semiconductor layers,
the plurality of semiconductor layers comprises a doped layer comprising cadmium selenide or cadmium telluride,
the doped layer is doped with a group V dopant,
a total dosage of the group V dopant in the absorber layer is greater than 0 atomic percent and less than 0.1 atomic percent, and
the absorber layer has a first surface nearest the energy side of the photovoltaic device, and an average concentration of oxygen in the absorber layer measured between a first surface of the absorber layer and a midpoint of the absorber layer is between 5×10 15 cm −3 and 3×10 17 cm −3 .
2. The photovoltaic device of claim 1 , comprising a back contact layer formed upon the absorber layer, wherein the back contact layer is substantially free of copper.
3. The photovoltaic device of claim 2 , wherein the back contact layer comprises nitrogen-doped zinc telluride.
4. The photovoltaic device of claim 2 , comprising a conducting layer formed over the back contact layer.
5. The photovoltaic device of claim 1 , wherein the plurality of semiconductor layers are deposited over the buffer layer, and the first surface of the absorber layer is provided upon the second surface of the buffer layer.
6. The photovoltaic device of claim 5 , wherein:
an absorber buffer interface region is formed adjacent to the first surface of the absorber layer;
a percent concentration profile of the Group V dopant is formed in the absorber layer with distance from the first surface of the absorber layer;
the percent concentration profile of the Group V dopant at the absorber buffer interface differs from the percent concentration profile of the Group V dopant in a bulk portion of the absorber layer; and
the Group V dopant comprises arsenic.
7. The photovoltaic device of claim 1 , wherein the buffer layer consists essentially of: intrinsic tin dioxide, zinc magnesium oxide, silicon dioxide, aluminum oxide, aluminum nitride, or a combination thereof.
8. The photovoltaic device of claim 1 , wherein the group V dopant comprises arsenic, phosphorous, antimony, or a combination thereof.
9. The photovoltaic device of claim 1 , wherein the absorber layer comprises a ternary of cadmium, selenium, and tellurium.
10. The photovoltaic device of claim 1 , wherein the absorber layer comprises a ternary or quaternary of cadmium, selenium, and tellurium.
11. The photovoltaic device of claim 1 , wherein the group V dopant is arsenic, and the total dosage of the group V dopant in the absorber layer is greater than 0.001 atomic percent and less than 0.05 atomic percent.
12. A photovoltaic device comprising:
an absorber layer having a first surface facing an energy side of the photovoltaic device and a second surface facing an opposing side of the photovoltaic device, wherein:
the absorber layer comprises cadmium, tellurium, and selenium,
the absorber layer is doped with a group V dopant, and
a total dosage of the group V dopant in the absorber layer is greater than 0.001 atomic percent and less than 0.05 atomic percent, and
a back contact layer provided upon the second surface of the absorber layer, wherein the back contact layer is substantially free of copper.
13. The photovoltaic device of claim 12 , wherein the back contact layer comprises nitrogen-doped zinc telluride.
14. The photovoltaic device of claim 12 , wherein the group V dopant is arsenic.
15. The photovoltaic device of claim 12 , wherein the group V dopant is phosphorous.
16. The photovoltaic device of any of claim 12 , wherein the group V dopant is antimony.
17. The photovoltaic device of claim 12 , further comprising a buffer layer, wherein:
the first surface of the absorber layer is provided upon a second surface of the buffer layer, whereby the absorber layer is adjacent to the buffer layer;
the buffer layer comprises at least one of: intrinsic tin dioxide, zinc magnesium oxide, silicon dioxide, aluminum oxide, or aluminum nitride;
an absorber buffer interface region is formed adjacent to the first surface of the absorber layer;
the group V dopant comprises arsenic;
a percent concentration profile of arsenic is formed in the absorber layer with distance from the first surface of the absorber layer; and
the percent concentration profile of arsenic at the absorber buffer interface differs from the percent concentration profile of arsenic in a bulk portion of the absorber layer.
18. The photovoltaic device of claim 17 , wherein the buffer layer consists essentially of: intrinsic tin dioxide, zinc magnesium oxide, silicon dioxide, aluminum oxide, or aluminum nitride.
19. The photovoltaic device of claim 12 , wherein the absorber layer comprises a ternary of cadmium, selenium, and tellurium given by the formula CdSe x Te 1-x and x varies in the absorber layer with distance from the first surface of the absorber layer.
20. A photovoltaic device comprising:
an absorber layer having a first surface facing an energy side of the photovoltaic device and a second surface facing an opposing side of the photovoltaic device, wherein:
the absorber layer comprises cadmium, tellurium, and selenium,
the absorber layer comprises greater than 0 atomic percent and less than about 20 atomic percent of selenium compared to cadmium,
the absorber layer is doped with arsenic,
a total dosage of the arsenic in the absorber layer is greater than 0 atomic percent and less than 0.05 atomic percent, and
an average concentration of oxygen in the absorber layer measured between the first surface of the absorber layer and a midpoint of the absorber layer is between 5×10 15 cm −3 and 3×10 17 cm −3 , and
a back contact layer provided upon the second surface of the absorber layer, wherein the back contact layer is substantially free of copper.