Semiconductor device, semiconductor system, moving body, and method for manufacturing semiconductor device
A semiconductor device includes a laminated body, a semiconductor element, and a cooler. The laminated body includes a first conductor layer, a first insulator layer, a second conductor layer, a second insulator layer, and a third conductor layer. The first conductor layer, the first insulator layer, the second conductor layer, the second insulator layer and the third conductor layer are laminated. The first insulator layer is arranged between the first conductor layer and the second conductor layer, and electrically insulates the first conductor layer from the second conductor layer. The second insulator layer is arranged between the second conductor layer and the third conductor layer, and electrically insulates the third conductor layer from the second conductor layer. The semiconductor element is mounted on the first conductor layer. The cooler is connected to the third conductor layer.
1. A semiconductor device comprising:
a laminated body including a first conductor layer, a first insulator layer, a second conductor layer, a second insulator layer, and a third conductor layer laminated, in which the first insulator layer is arranged between the first conductor layer and the second conductor layer and electrically insulates the first conductor layer from the second conductor layer, and the second insulator layer is arranged between the second conductor layer and the third conductor layer and electrically insulates the third conductor layer from the second conductor layer;
a semiconductor element mounted on the first conductor layer; and
a cooler connected to the third conductor layer; wherein
the first insulator layer has a planar shape smaller than a planar shape of the second insulator layer.
2. The semiconductor device according to claim 1 , wherein
the semiconductor device includes a conduction path through which a main current flows, and
the second conductor layer is electrically insulated from the conduction path.
3. The semiconductor device according to claim 1 , further comprising
a signal terminal electrically connected to the second conductor layer.
4. The semiconductor device according to claim 3 , further comprising
a conductor wire that electrically connects the second conductor layer to the signal terminal.
5. The semiconductor device according to claim 1 , wherein
the second conductor layer has a thickness thicker than that of the third conductor layer.
6. The semiconductor device according to claim 1 , wherein
the first insulator layer and the second conductor layer constitute a first integrated component,
the second insulator layer and the third conductor layer constitute a second integrated component,
the second integrated component has a first main surface on a side on which the second insulator layer is arranged and a second main surface on a side on which the third conductor layer is arranged,
the semiconductor element includes a main electrode and a signal electrode,
the semiconductor element, the first conductor layer, and the first integrated component are arranged on the first main surface, and
the semiconductor device further comprising a main terminal electrically connected to the main electrode, a signal terminal electrically connected to the signal electrode, a mold resin that covers from a side of the first main surface, a part of the main terminal, a part of the signal terminal, the semiconductor element, the first conductor layer, the first integrated component, and the second integrated component, and does not cover the second main surface.
7. A semiconductor system comprising:
a semiconductor device comprising:
a laminated body including a first conductor layer, a first insulator layer, a second conductor layer, a second insulator layer, and a third conductor layer laminated, in which the first insulator layer is arranged between the first conductor layer and the second conductor layer and electrically insulates the first conductor layer from the second conductor layer, and the second insulator layer is arranged between the second conductor layer and the third conductor layer and electrically insulates the third conductor layer from the second conductor layer;
a semiconductor element mounted on the first conductor layer; and
a cooler connected to the third conductor layer;
a monitor circuit that is electrically connected to the second conductor layer and detects that at least one of conductor layers of the first conductor layer and the third conductor layer is electrically short-circuited with the second conductor layer; and
a power supply circuit that causes a main current to flow through the semiconductor device and, when that the at least one of the conductor layers is electrically short-circuited with the second conductor layer is detected, limits the flow of the main current.
8. The semiconductor system according to claim 7 , wherein
limiting the flow of the main current includes stopping the flow of the main current.
9. The semiconductor system according to claim 7 , wherein
limiting the flow of the main current includes lowering an output voltage of the power supply circuit without stopping the flow of the main current.
10. The semiconductor system according to claim 7 , further comprising
a warning device configured to issue a warning when that the at least one of the conductor layers is electrically short-circuited with the second conductor layer is detected.
11. A moving body comprising
the semiconductor system according to claim 7 .
12. The moving body according to claim 11 , wherein
the at least one of the conductor layers includes the third conductor layer,
the moving body further comprises a body, and
the monitor circuit performs monitoring of voltage between the second conductor layer and the body and detects that the third conductor layer is short-circuited with the second conductor layer based on a result of the monitoring.
13. A semiconductor system comprising:
a semiconductor device comprising:
a laminated body including a first conductor layer, a first insulator layer, a second conductor layer, a second insulator layer, and a third conductor layer laminated, in which the first insulator layer is arranged between the first conductor layer and the second conductor layer and electrically insulates the first conductor layer from the second conductor layer, and the second insulator layer is arranged between the second conductor layer and the third conductor layer and electrically insulates the third conductor layer from the second conductor layer;
a semiconductor element mounted on the first conductor layer; and
a cooler connected to the third conductor layer;
a monitor circuit that is electrically connected to the second conductor layer and detects that at least one of conductor layers of the first conductor layer and the third conductor layer is electrically short-circuited with the second conductor layer; and
a warning device configured to issue a warning when that the at least one of the conductor layers is electrically short-circuited with the second conductor layer is detected.