IP Library › Granted Patent US 12,540,417
Granted Patent B2
US 12,540,417 · App. 17/754,503 · Granted Feb 3, 2026

Growth of semiconductor materials by hydride vapor phase epitaxy using an external aluminum chloride generator

Inventors: Wondwosen Tilahun Metaferia (Rio Rancho, NM); Kevin Louis Schulte (Denver, CO); Aaron Joseph Ptak (Littleton, CO); John David Simon (Austin, TX)
Assignee: Alliance for Energy Innovation, LLC
C30B25/14C30B29/40H01L21/02543H01L21/02546H01L21/0262H01L21/02395H01L21/02433
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Quick Facts
Patent No.
US 12,540,417
App. No.
17/754,503
Granted
Feb 3, 2026
Kind
B2
Abstract

Disclosed herein is the controlled epitaxy of Al x Ga 1-x As, Al x In 1-x P, and Al x Ga y In 1-x-y P by hydride vapor phase epitaxy (HVPE) through use of an external AlCl 3 generator.

Claims (12)

1 . A method for the deposition of Al-containing III-V materials by hydride vapor phase epitaxy (HVPE) through use of an external AlCl 3 generator; wherein the AlCl 3 molecules do not decompose during the deposition process.

2 . The method of claim 1 wherein the source temperature of the external AlCl 3 generator is about 400 degrees Celsius.

3 . The method of claim 1 wherein a deposition temperature ranges from 620 to 700 degrees Celsius.

4 . The method of claim 1 wherein the Al-containing III-V materials comprise Al x Ga 1-x As where x is from 0 to 1.

5 . The method of claim 4 wherein the V/III ratio of Al-containing III-V materials is from 10 to 300.

6 . The method of claim 1 wherein the group V species is selected from the group consisting of nitrogen, phosphorus, arsenic, and antimony.

7 . The method of claim 1 further comprising the use of AsH 3 .

8 . An optoelectronic device made by using a method for the deposition of Al-containing III-V materials by HVPE through use of an external AlCl 3 generator;

wherein the AlCl 3 molecules do not decompose during the deposition process.

9 . The optoelectronic device of claim 8 wherein the source temperature of the external AlCl 3 generator is about 400 degrees Celsius.

10 . The optoelectronic device of claim 8 wherein a deposition temperature ranges from 620 to 700 degrees Celsius.

11 . The optoelectronic device of claim 8 wherein the Al-containing III-V materials comprise lattice-matched Al x In 1-x P and Al x Ga y In 1-x-y P.

Assignments (3)
CHANGE OF NAME Recorded Dec 16, 2025
From: ALLIANCE FOR SUSTAINABLE ENERGY, LLC
To: ALLIANCE FOR ENERGY INNOVATION, LLC
Reel/Frame 073993/0276 →
CONFIRMATORY LICENSE Recorded May 11, 2022
From: NATIONAL RENEWABLE ENERGY LABORATORY
To: UNITED STATES DEPARTMENT OF ENERGY
Reel/Frame 059889/0666 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 4, 2022
From: METAFERIA, WONDWOSEN TILAHUN; SCHULTE, KEVIN LOUIS; PTAK, AARON JOSEPH; SIMON, JOHN DAVID
To: ALLIANCE FOR SUSTAINABLE ENERGY, LLC
Reel/Frame 059493/0691 →
Continuity (2)
Provisional Application 62910923 · Oct 4, 2019
Related Publication 20230062711A1 · Mar 2, 2023
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