High efficiency vertical grating coupler for flip-chip application

1. A photonic device, comprising:

a substrate;

a cladding layer disposed on the substrate;

an electrical device region formed within the cladding layer, the electrical device region having a plurality of electrical device component layers that include at least one metal layer; and

a grating region formed within the cladding layer, the grating region including a grating coupler and the at least one metal layer, wherein a distance between the grating coupler and the at least one metal layer in the grating region is based on an integer multiple of a wavelength of light configured to be emitted from the grating coupler into the grating region.

2. The photonic device of claim 1 , wherein the at least one metal layer of the electrical device region and the grating region is formed simultaneously.

3. The photonic device of claim 1 , wherein the substrate is a silicon on insulator (SOI) substrate having a silicon (Si) substrate, a buried oxide (BOX) layer disposed on the Si substrate, and a Si layer disposed on the BOX layer that is configured to form the grating coupler.

4. The photonic device of claim 3 , wherein the Si substrate is configured such that an optical fiber can be optically coupled to the grating coupler.

5. The photonic device of claim 4 , wherein material of the cladding layer is disposed between the at least one metal layer and the grating coupler of the grating region.

6. The photonic device of claim 4 , wherein the at least one metal layer of the grating region is configured to reflect the light emitted from the grating coupler.

7. The photonic device of claim 6 , wherein the at least one metal layer of the grating region is disposed at the distance from the grating coupler such that destructive interference between reflected light from the at least one metal layer of the grating region and the light emitted from the grating coupler is minimized.

8. The photonic device of claim 4 , wherein the optical fiber couples to the grating coupler with a coupling efficiency of at least 70%.

9. The photonic device of claim 1 , wherein the plurality of electrical device component layers includes at least two metal layers and the grating region includes at least one of the at least two metal layers.

10. The photonic device of claim 1 , wherein the photonic device is configured to be flip-chip bonded to a packaging substrate.

11. The photonic device of claim 1 , wherein the at least one metal layer is continuous across the electrical device region and the grating region.

12. The photonic device of claim 1 , wherein the at least one metal layer of the electrical device region and the grating region is disposed within the cladding layer at a substantially equal distance from the substrate.

13. The photonic device of claim 1 , wherein the at least one metal layer is a first metal layer, and wherein the electrical device region includes a second metal layer.

14. The photonic device of claim 13 , wherein the grating region includes the second metal layer.

15. The photonic device of claim 13 , wherein a distance between the first metal layer and the substrate is greater than a distance between the second metal layer and the substrate.

16. The photonic device of claim 13 , wherein a distance between the first metal layer and the substrate is less than a distance between the second metal layer and the substrate.

17. The photonic device of claim 3 , wherein the Si layer includes a waveguide.