Thin-film saw device utilizing rayleigh mode
A surface acoustic wave device ( 5 ) is provided using a layered substrate system with a special material and a special cut of a piezoelectric thin film ( 4 ) selected for utilizing Rayleigh mode. The proper choice of the material and the cut of the piezoelectric thin film leads to a low velocity of the excited wave mode, which allows the usage of smaller devices without deteriorating other performance parameters according to specifications.
1 . A SAW device realized on a layer stack comprising:
a substrate;
a TCF compensating layer;
a piezoelectric thin film; and
an electrode structure,
wherein the piezoelectric thin film has a thickness and a cut-angle that favors excitement and propagation of a Rayleigh wave as a main mode, wherein the piezoelectric thin film is a lithium niobate film having a crystal cut with Euler angles of (0°/125°±15°/0°).
2 . The SAW device of claim 1 , wherein λ is a wavelength of the main mode and wherein the piezoelectric thin film has a thickness x with 0.1λ<x<0.6λ.
3 . The SAW device of claim 1 , wherein λ is a wavelength of the main mode and wherein:
the TCF compensating layer is a SiO 2 layer having a thickness y of 0.05λ<y<0.5λ.
4 . The SAW device of claim 1 , wherein the substrate comprises a high resistive crystalline material.
5 . The SAW device of claim 1 , wherein:
the substrate comprises silicon with Euler angles of (−45°±10°, −54°±10°, 60°±20°) or (0°±10°, 0°±10°, 45°±20°).
6 . The SAW device of claim 1 , wherein λ is a wavelength of the main mode and wherein the device further comprises an additional layer disposed
between the substrate and the TCF compensating layer that comprises a polycrystalline silicon having a thickness z, wherein 0.05λ<z<1.0λ.
7 . The SAW device of claim 1 , wherein λ is a wavelength of the main mode and wherein:
the electrode structure has a layered structures;
Al is a main component of the layered electrode structure; and
the electrode structure has a thickness z with 0.05λ<z<0.25λ.
8 . The SAW device of claim 1 , wherein λ is a wavelength of the main mode and wherein:
a dielectric passivation layer is arranged on the electrode structure, the passivation layer having a thickness w with 0.0025λ<w<0.2λ; and
a material of the dielectric passivation layer is chosen from Si 3 N 4 , SiO 2 , SiON and Al 2 O 3 .
9 . The SAW device of claim 1 , wherein the TCF compensating layer comprises one of doped SiO 2 and GeO 2 .
10 . The SAW device of claim 1 , wherein the substrate comprises one of Quartz, Sapphire, Glass, Spinel and SiC.
11 . The SAW device of claim 1 , wherein the device further comprises an additional layer between the substrate and the TCF compensating layer, wherein the additional layer comprises one of AIN, Si 3 N 4 , diamond and SiC.
12 . The SAW device of claim 1 , wherein the electrode structure comprises one of a copper-based electrode system of one or more layers, a single layer chosen from W, Mo and Pt, Ta, Ag, Au and Ti.
13 . The SAW device of claim 1 , wherein the TCF compensating layer is disposed between the substrate and the piezoelectric thin film, wherein the piezoelectric thin film is disposed between the TCF compensating layer and the electrode structure.