Substrate processing method
A substrate processing method which can supply gas to a plurality of process chamber through one gas supply unit, and supply different gases at the same time, thereby improving the uniformity of the thicknesses of thin films deposited in the respective chambers. The substrate processing method can perform a process in only one chamber by supplying gas to only the chamber at the same time or perform different processes in the plurality of chambers by supplying different gases to the respective chambers. Therefore, films having uniform thicknesses can be deposited in the respective chambers, and the gas supply efficiency can be improved.
1. A substrate processing method of a substrate processing apparatus which includes a gas supply unit configured to supply process gas, a first gas line configured to supply the process gas to a first chamber, a first valve configured to open/close the first gas line, a second gas line configured to supply the process gas to a second chamber, a second valve configured to open/close the second gas line, and a third gas line configured to supply the process gas, supplied from the gas supply unit, to each of the first and second gas lines,
wherein the process gas supplied from the gas supply unit is supplied to the first and second gas lines through the third gas line, and the supply of the process gas is controlled through operations of the first and second valves,
wherein the process gas comprises any one of source gas and reaction gas,
wherein the substrate processing method comprises: a first step of supplying source gas of the process gas to the first chamber, and supplying reaction gas of the process gas to the second chamber; and
a second step of supplying the reaction gas of the process gas to the first chamber and supplying the source gas of the process gas to the second chamber.
2. The substrate processing method of claim 1 , wherein a process of performing the first step and then performing the second step is set to one cycle, and the one cycle is repeatedly performed.
3. The substrate processing method of claim 1 , further comprising supplying purge gas after the first and second steps.
4. The substrate processing method of claim 1 , wherein the supply times of the source gas and the reaction gas are different from each other.