High-frequency terminator

1. A high-frequency terminator, comprising:

a dielectric substrate;

a metal layer provided at a back surface side of the dielectric substrate;

a transmission line provided at a front surface side of the dielectric substrate;

a resistor provided at the front surface side of the dielectric substrate, the resistor being connected to the transmission line; and

a conductor electrically connecting the resistor and the metal layer,

the dielectric substrate including

a first substrate part having a first thickness in a first direction, the first direction being from the back surface toward the front surface of the dielectric substrate, and

a second substrate part having a second thickness in the first direction, the second thickness being less than the first thickness,

the front surface of the dielectric substrate being flat,

a step between the first substrate part and the second substrate part being provided in the back surface side,

the transmission line extending from the first substrate part to the second substrate part and being connected to the resistor on the second substrate part,

the conductor electrically connecting the metal layer and the resistor at the second substrate part.

2. The high-frequency terminator according to claim 1 , wherein

the second substrate part is positioned at an outer edge of the dielectric substrate.

3. The high-frequency terminator according to claim 2 , wherein

the conductor is provided on a side surface linked to the back and front surfaces at the outer edge of the dielectric substrate.

4. The high-frequency terminator according to claim 1 , wherein

the conductor covers an inner surface of a through-hole extending through the second substrate part, and

the conductor is connected to the metal layer at the back surface side.

5. The high-frequency terminator according to claim 1 , wherein

the transmission line includes:

a first line part positioned on the first substrate part; and

a second line part positioned on the second substrate part,

a second direction is along the front surface of the dielectric substrate and crosses an extension direction of the transmission line, and

a width in the second direction of the first line part is greater than a width in the second direction of the second line part in the second direction.

6. The high-frequency terminator according to claim 5 , wherein

the dielectric substrate further includes a third substrate part positioned between the first substrate part and the second substrate part,

the third substrate part has

a third thickness in the first direction at a first position along the extension direction of the transmission line, and

a fourth thickness in the first direction at a second position along the extension direction,

the fourth thickness at the second position is less than the third thickness at the first position, and

the second position is more proximate to the resistor than the first position.

7. The high-frequency terminator according to claim 6 , wherein

the first position and the second position are provided on the second line part,

the second line part has

a first width in the second direction at the first position, and

a second width in the second direction at the second position, and

the first width is greater than the second width.