Electronic device and manufacturing method of the same
According to one embodiment, an electronic device includes a lower electrode, a second insulating layer including an opening overlapping the lower electrode, an organic layer covering the lower electrode at the opening, an upper electrode covering the organic layer, and a barrier wall on the second insulating layer. The barrier wall includes a first layer formed of a metal material and including a first side surface which is in contact with the upper electrode, a second layer disposed above the first layer and extending from the first side surface toward the opening, and a protective layer formed of a material different from a material of the organic layer and covering at least an upper surface of the second layer.
1. An electronic device comprising:
a substrate;
a first insulating layer disposed on the substrate;
a lower electrode disposed on the first insulating layer;
a second insulating layer disposed on the first insulating layer and including an opening overlapping the lower electrode;
an organic layer covering the lower electrode at the opening;
an upper electrode covering the organic layer; and
a barrier wall disposed on the second insulating layer, wherein
the barrier wall comprises:
a first layer formed of a metal material and including a first side surface which is in contact with the upper electrode;
a second layer disposed above the first layer and extending from the first side surface toward the opening;
an intermediate layer located between the first layer and the second layer; and
a protective layer formed of a material different from a material of the organic layer and covering at least an upper surface of the second layer;
the intermediate layer extends from the first side surface toward the opening, and
the protective layer covers a second side surface of the second layer and is in contact with the intermediate layer.
2. The electronic device of claim 1 , wherein
the second layer is an inorganic insulating layer formed of a same material as a material of the second insulating layer.
3. The electronic device of claim 1 , wherein
the protective layer is a metal layer formed of a metal material.
4. A method of manufacturing an electronic device, the method comprising:
forming a lower electrode on a first insulating layer;
forming a second insulating layer covering the first insulating layer and the lower electrode;
forming a barrier wall on the second insulating layer; and
forming an opening to expose the lower electrode in the second insulating layer, wherein
the barrier wall comprises:
a first layer formed of a metal material and including a first side surface;
a second layer disposed above the first layer and extending from the first side surface toward the opening;
an intermediate layer between the first layer and the second layer; and
a protective layer covering at least an upper surface of the second layer;
the intermediate layer extends from the first side surface toward the opening,
the protective layer covers a second side surface of the second layer and is in contact with the intermediate layer, and
the opening is formed by dry etching the second insulating layer using the barrier wall as a mask.
5. The method of claim 4 , further comprising:
forming the opening and then forming an organic layer on the lower electrode in the opening,
wherein
the organic layer is formed by vacuum deposition using the barrier wall as a mask.
6. The method of claim 5 , further comprising:
forming the organic layer and then forming an upper electrode on the organic layer,
wherein
the upper electrode is formed by sputtering using the barrier wall as a mask.