Method of forming an embedded magnetic shielding device
A semiconductor device has a substrate. A semiconductor die is disposed over the substrate. A first encapsulant is deposited over the semiconductor die. A ferromagnetic film is disposed over the first encapsulant. A second encapsulant is deposited over the ferromagnetic film. A shielding layer is optionally formed over the substrate, first encapsulant, and second encapsulant.
1 . A method of making a semiconductor device, comprising: providing a substrate; disposing a semiconductor die over the substrate; depositing a first encapsulant over the semiconductor die; disposing a ferromagnetic film over the first encapsulant; and depositing a second encapsulant over the ferromagnetic film, wherein vertical side surfaces of the first encapsulant, second encapsulant, and ferromagnetic film are coplanar.
2 . The method of claim 1 , further including forming a shielding layer over the substrate, first encapsulant, and second encapsulant.
3 . The method of claim 1 , further including:
forming a conductive pillar over the substrate;
depositing the first encapsulant over the conductive pillar; and
disposing the ferromagnetic film on the conductive pillar and first encapsulant.
4 . The method of claim 3 , further including forming the conductive pillar as a can extending continuously completely around the semiconductor die.
5 . The method of claim 1 , further including depositing the second encapsulant in contact with the first encapsulant around the ferromagnetic film.
6 . The method of claim 1 , further including singulating the first encapsulant, second encapsulant, and ferromagnetic film.
7 . A method of making a semiconductor device, comprising: providing an electrical component; depositing a first encapsulant over the electrical component; disposing a ferromagnetic film over the first encapsulant; and depositing a second encapsulant over the ferromagnetic film, wherein vertical side surfaces of the first encapsulant, second encapsulant, and ferromagnetic film are coplanar.
8 . The method of claim 7 , further including forming a shielding layer over the first encapsulant, and second encapsulant.
9 . The method of claim 7 , further including:
forming a conductive pillar adjacent to the electrical component;
depositing the first encapsulant over the conductive pillar; and
disposing the ferromagnetic film on the conductive pillar and first encapsulant.
10 . The method of claim 9 , further including forming the conductive pillar as a can extending continuously completely around the electrical component.
11 . The method of claim 7 , further including depositing the second encapsulant in contact with the first encapsulant around the ferromagnetic film.
12 . The method of claim 7 , further including:
forming a trench in the first encapsulant; and
depositing an electrically or magnetically conductive material in the trench to form a conductive pillar or can.
13 . The method of claim 7 , further including singulating the first encapsulant, second encapsulant, and ferromagnetic film.
14 . A method of making a semiconductor device, comprising:
providing a substrate;
disposing a semiconductor die over the substrate;
disposing an electrical component over the substrate;
depositing a first encapsulant over the semiconductor die;
disposing a ferromagnetic film over the first encapsulant with the electrical component outside a footprint of the ferromagnetic film; and
depositing a second encapsulant over the ferromagnetic film, wherein side surfaces of the first encapsulant, second encapsulant, and ferromagnetic film are coplanar.
15 . The method of claim 14 , further including forming a shielding layer over the substrate, first encapsulant, and second encapsulant.
16 . The method of claim 14 , further including disposing a conductive pillar in the first encapsulant between the substrate and ferromagnetic film and between the semiconductor die and electrical component.
17 . The method of claim 16 , wherein the conductive pillar comprises a can extending continuously completely around the semiconductor die.
18 . The method of claim 14 , wherein the second encapsulant physically contacts the first encapsulant continuously completely around the ferromagnetic film.
19 . A method of making a semiconductor device, comprising:
providing a first electrical component;
providing a second electrical component;
depositing a first encapsulant over the first electrical component and second electrical component;
disposing a ferromagnetic film over the first encapsulant; and
depositing a second encapsulant over the ferromagnetic film, wherein side surfaces of the first encapsulant, second encapsulant, and ferromagnetic film are coplanar.
20 . The method of claim 19 , further including forming a shielding layer over the first encapsulant and second encapsulant.
21 . The method of claim 19 , further including disposing a conductive pillar or can in the first encapsulant under the ferromagnetic film and between the first electrical component and second electrical component.
22 . The method of claim 19 , wherein the second encapsulant physically contacts the first encapsulant around the ferromagnetic film.
23 . The method of claim 19 , wherein the ferromagnetic film includes a plurality of ferromagnetic layers.