Counter electrode for electrochromic devices
The embodiments herein relate to electrochromic stacks, electrochromic devices, and methods and apparatus for making such stacks and devices. In various embodiments, an anodically coloring layer in an electrochromic stack or device is fabricated to include nickel tungsten tantalum oxide (NiWTaO). This material is particularly beneficial in that it is very transparent in its clear state.
1. A method of fabricating an electrochromic stack, the method comprising:
forming a cathodically coloring layer comprising a cathodically coloring electrochromic material; and
forming an anodically coloring layer comprising nickel tungsten tantalum oxide,
wherein the nickel tungsten tantalum oxide has an atomic ratio of Ni:(W+Ta) that is between 1.5:1 and 3:1, and has an atomic ratio of W:Ta that is between about 0.1:1 and 6:1,
wherein the anodically coloring layer comprises two or more sub-layers that have different compositions and/or different relative concentration, and
wherein a first sub-layer comprises a binary metal oxide and a second sub-layer comprises a ternary metal oxide.
2. The method of claim 1 , wherein the nickel tungsten tantalum oxide has the atomic ratio of Ni:(W+Ta) that is between about 1.8:1 and 2.5:1.
3. The method of claim 2 , wherein the nickel tungsten tantalum oxide has the atomic ratio of Ni:(W+Ta) that is between about 2:1 and 2.5:1.
4. The method of claim 1 , wherein the nickel tungsten tantalum oxide has the atomic ratio of Ni:(W+Ta) that is between about 2:1 and 3:1.
5. The method of claim 1 , wherein forming the anodically coloring layer comprises sputtering one or more sputter targets to form the nickel tungsten tantalum oxide.
6. The method of claim 5 , wherein at least one of the one or more of the sputter targets comprise an elemental metal selected from the group consisting of nickel, tungsten, and tantalum.
7. The method of claim 5 , wherein at least one of the one or more of the sputter targets comprise an alloy comprising two or more metals selected from the group consisting of nickel, tungsten, and tantalum.
8. The method of claim 5 , wherein at least one of the one or more of the sputter targets comprise an oxide.
9. The method of claim 1 , wherein the anodically coloring layer is substantially amorphous.
10. The method of claim 1 , wherein the cathodically coloring layer and the anodically coloring layer are formed in direct physical contact with one another, without a separate ion conductor layer deposited between them.
11. The method of claim 1 , wherein the two or more sub-layers have different morphologies.
12. The method of claim 1 , wherein the cathodically coloring electrochromic material comprises tungsten oxide (WO x ).
13. The method of claim 12 , wherein x is less than 3.0.
14. The method of claim 13 , wherein x is at least about 2.7.
15. The method of claim 1 , wherein the cathodically coloring layer comprises a bilayer or a graded layer, and wherein a portion of the cathodically coloring layer is superstoichiometric with respect to oxygen.
16. An electrochromic stack, comprising:
a cathodically coloring layer comprising a cathodically coloring material; and
an anodically coloring layer comprising nickel tungsten tantalum oxide,
wherein the nickel tungsten tantalum oxide has an atomic ratio of Ni:(W+Ta) that is between 1.5:1 and 3:1, and has an atomic ratio of W:Ta that is between 0.1:1 and 6:1,
wherein the anodically coloring layer comprises two or more sub-layers that have different compositions and/or different relative concentration, and
wherein a first sub-layer comprises a binary metal oxide and a second sub-layer comprises a ternary metal oxide.
17. The electrochromic stack of claim 16 , wherein the nickel tungsten tantalum oxide has the atomic ratio of Ni:(W+Ta) that is between about 1.8:1 and 2.5:1.
18. The electrochromic stack of claim 17 , wherein the nickel tungsten tantalum oxide has the atomic ratio of Ni:(W+Ta) that is between about 2:1 and 2.5:1.
19. The electrochromic stack of claim 16 , wherein the nickel tungsten tantalum oxide has the atomic ratio of Ni:(W+Ta) that is between about 2:1 and 3:1.
20. The electrochromic stack of claim 16 , wherein the anodically coloring layer is substantially amorphous.
21. The electrochromic stack of claim 16 , wherein the anodically coloring layer comprises an amorphous matrix of a first material having domains of a second material scattered throughout the amorphous matrix.
22. The electrochromic stack of claim 16 , wherein the cathodically coloring layer is in direct physical contact with the anodically coloring layer.
23. The electrochromic stack of claim 16 , wherein the two or more sub-layers have different morphologies.
24. The electrochromic stack of claim 16 , wherein the cathodically coloring material comprises tungsten oxide (WO x ).
25. The electrochromic stack of claim 24 , wherein x is less than 3.0.
26. The electrochromic stack of claim 25 , wherein x is at least about 2.7.
27. The electrochromic stack of claim 16 , wherein the cathodically coloring layer comprises a bilayer or a graded layer, and wherein a portion of the cathodically coloring layer is superstoichiometric with respect to oxygen.