IP Library › Granted Patent US 12,320,870
Granted Patent B2
US 12,320,870 · App. 17/813,412 · Granted Jun 3, 2025

Controlling out-of-plane anisotropy in an MR sensor with free layer dusting

Inventors: Samridh Jaiswal (London, GB); Paolo Campiglio (Arcueil, FR)
Assignee: Allegro MicroSystems, LLC
G01R33/093G01R33/098H01F10/3286H10N50/10H10N50/85
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Quick Facts
Patent No.
US 12,320,870
App. No.
17/813,412
Granted
Jun 3, 2025
Kind
B2
Abstract

Methods and apparatus for a magnetoresistive (MR) sensor a free layer with a thickness of the CoFeB material to produce out-of-plane sensing for the sensor and a reference layer magnetically coupled to the free layer. A dusting layer of an oxide material is disposed on the free layer to achieve perpendicular magnetic anisotropy for an interface of the oxide layer and the free layer for a desired sensitivity for the sensor.

Claims (23)

1. A method, comprising:

forming, as part of a magnetic sensor, a free layer, wherein the free layer comprises CoFeB material;

selecting a thickness of the CoFeB material to produce out-of-plane sensing for the sensor; and

controlling a thickness of a dusting layer of an oxide material on the free layer to achieve perpendicular magnetic anisotropy for an interface of the oxide material and the CoFeB for providing a desired sensitivity for the sensor,

wherein the magnetic sensor comprises an angle sensor.

2. The method according to claim 1 , wherein the oxide material comprises MgO.

3. The method according to claim 1 , wherein the thickness of the CoFeB material determines an orientation of a magnetic field of the free layer.

4. The method according to claim 1 , wherein the perpendicular magnetic anisotropy occurs as a result of hybridization between 2p and 3d orbitals of Oxygen in the oxide material and Fe in the CoFeB.

5. The method according to claim 1 , wherein a magnetic field orientation of the free layer is orthogonal to magnetic field orientations of a reference layer.

6. The method according to claim 1 , wherein the CoFeB material has a thickness of less than 1.4 nm.

7. The method according to claim 1 , wherein the CoFeB material has a thickness of about 1.0 nm.

8. The method according to claim 1 , wherein a response of the magnetic sensor is linear.

9. A magnetic field sensor, comprising:

a free layer comprising CoFeB material having a thickness to produce out-of-plane sensing for the sensor; and

a dusting layer comprising an oxide material on the free layer to achieve perpendicular magnetic anisotropy for an interface of the oxide material and the CoFeB of the free layer for providing a desired sensitivity for the sensor,

wherein the magnetic sensor comprises an angle sensor.

10. The sensor according to claim 9 , wherein the oxide material comprises MgO.

11. The sensor according to claim 9 , wherein the thickness of the CoFeB material determines an orientation of a magnetic field of the free layer.

12. The sensor according to claim 9 , wherein the perpendicular magnetic anisotropy occurs as a result of hybridization between 2p and 3d orbitals of Oxygen in the oxide material and Fe in the CoFeB.

13. The sensor according to claim 9 , wherein a magnetic field orientation of the free layer is orthogonal to magnetic field orientations of a reference layer.

14. The sensor according to claim 9 , wherein the CoFeB material has a thickness of less than 1.4 nm.

15. The sensor according to claim 9 , wherein the CoFeB material has a thickness of about 1.0 nm.

16. The sensor according to claim 9 , wherein a response of the magnetic sensor is linear.

Assignments (2)
PATENT SECURITY AGREEMENT Recorded Jun 22, 2023
From: ALLEGRO MICROSYSTEMS, LLC
To: MORGAN STANLEY SENIOR FUNDING, INC., AS THE COLLATERAL AGENT
Reel/Frame 064068/0459 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 20, 2022
From: JAISWAL, SAMRIDH; CAMPIGLIO, PAOLO; ALLEGRO MICROSYSTEMS FRANCE SAS; ALLEGRO MICROSYSTEMS EUROPE LIMITED
To: ALLEGRO MICROSYSTEMS, LLC
Reel/Frame 060558/0801 →
Continuity (1)
Related Publication 20240027547A1 · Jan 25, 2024
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Japanese Allowance Report (with Claims and English Translation) dated Mar. 26, 2019 for Japanese Application No. 2016-545864; 10 Pages. [cited by applicant]
Korean 1 [cited by applicant]
Response (with English Translation) to Korean 1st Office Action dated Nov. 23, 2020 for Korean Application No. 10-2016-7021480; Response filed Jan. 21, 2021; 137 Pages. [cited by applicant]
Korean 2 [cited by applicant]
Response (with English Translation) to Korean 2 [cited by applicant]
Korean Notice of Allowance (with English Translation) dated Nov. 26, 2021 for Korean Application No. 10-2016-7021480; 10 Pages. [cited by applicant]
Response to European Examination Report Mar. 13, 2024, filed on May 22, 2024 for European Application No. 20184390.1, 20 pages. [cited by applicant]
U.S. Appl. No. 17/805,054, filed Jun. 2, 2022, Campiglio et al. [cited by applicant]
European Examination Report Mar. 13, 2024 for European Application No. 20184390.1, 7 pages. [cited by applicant]
U.S. Non-Final Office Action dated Mar. 30, 2023 for U.S. Appl. No. 17/805,054; 25 Pages. [cited by applicant]
Response to U.S. Non-Final Office Action dated Mar. 30, 2023 for U.S. Appl. No. 17/805,054; Response filed Apr. 5, 2023; 8 Pages. [cited by applicant]
U.S. Notice of Allowance dated May 10, 2023 for U.S. Appl. No. 17/805,054; 8 Pages. [cited by applicant]