Quantum dots, a composition or composite including the same, and an electronic device including the same
Quantum dots and a composite and a display device including the quantum dots. The quantum dots comprise a semiconductor nanocrystal core comprising indium and phosphorous, and optionally zinc, a semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core, the first semiconductor nanocrystal shell comprising zinc, selenium, and sulfur, wherein the quantum dots are configured to exhibit a maximum photoluminescence peak in a green light wavelength region, and in an ultraviolet-visible (UV-Vis) absorption spectrum of the quantum dots, a ratio A 450 /A first , of an absorption value at 450 nm to an absorption value at a first excitation peak is greater than or equal to about 0.7, and a valley depth (VD) defined by the following equation is greater than or equal to about 0.4: (Abs first −Abs valley )/Abs first =VD wherein, Abs first is an absorption value at the first absorption peak wavelength and Abs valley is an absorption value at a lowest point of the valley adjacent to the first absorption peak, and wherein the maximum photoluminescence peak of the quantum dots has a full width at half maximum of less than or equal to 40 nanometers.
1. Quantum dots each comprising
a semiconductor nanocrystal core comprising indium, phosphorous, and optionally zinc,
a semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core, the semiconductor nanocrystal shell comprising zinc, selenium, and sulfur,
wherein the quantum dots are configured to exhibit a maximum photoluminescence peak in a green light wavelength region, and in an ultraviolet-visible absorption spectrum of the quantum dots, a ratio A 450 /A first , of an absorption value at 450 nanometers to an absorption value of a first absorption peak is greater than or equal to about 0.7, and a valley depth (VD) defined by the following equation is greater than or equal to about 0.4:
(Abs first −Abs valley )/Abs first =VD
wherein, Abs first is the absorption value of the first absorption peak wavelength, and Abs valley is an absorption value at a lowest point of the valley adjacent to the first absorption peak, and
wherein the maximum photoluminescence peak of the quantum dots has a full width at half maximum of less than or equal to 40 nanometers.
2. The quantum dots of claim 1 , wherein the first absorption peak is in a wavelength range of greater than about 450 nanometers and less than or equal to 510 nanometers.
3. The quantum dots of claim 1 , wherein the ratio of the absorption value at 450 nanometers to the absorption value at the first absorption peak is greater than or equal to about 0.78.
4. The quantum dots of claim 1 , wherein the valley depth is from about 0.5 to 0.58.
5. The quantum dots of claim 1 , wherein the valley depth is greater than or equal to about 0.53.
6. The quantum dots of claim 1 , wherein the quantum dots do not comprise cadmium, and
the quantum dots comprises a mole ratio of sulfur with respect to selenium (S:Se) of less than or equal to about 2.5:1.
7. The quantum dots of claim 1 , wherein the quantum dots comprises a mole ratio of sulfur with respect to selenium (S:Se) is greater than or equal to about 0.05:1 and less than or equal to about 0.8:1.
8. The quantum dots of claim 1 , wherein in the quantum dots,
a mole ratio of zinc with respect to indium is greater than or equal to about 10:1 and less than or equal to about 50:1; or
a mole ratio of a sum of selenium and sulfur with respect to indium [(S+Se)/In] is greater than or equal to about 10:1 and less than or equal to about 40:1.
9. The quantum dot of claim 1 , wherein a quantum efficiency of the quantum dots is greater than or equal to about 80%.
10. The quantum dot of claim 1 , wherein a quantum efficiency of the quantum dots is greater than or equal to about 90%.
11. Quantum dots each comprising
a semiconductor nanocrystal core comprising indium, phosphorous, and optionally zinc,
a semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core, the semiconductor nanocrystal shell comprising zinc, selenium, and sulfur,
wherein the quantum dots are configured to exhibit a maximum photoluminescence peak in a green light wavelength region, and in an ultraviolet-visible absorption spectrum of the quantum dots, a ratio A 450 /A first , of an absorption value at 450 nanometers to an absorption value of a first absorption peak is greater than or equal to about 0.7, and a valley depth (VD) defined by the following equation is greater than or equal to about 0.4:
(Abs first −Abs valley )/Abs first =VD
wherein, Abs first is the absorption value of the first absorption peak wavelength, and Abs valley is an absorption value at a lowest point of the valley adjacent to the first absorption peak, and
wherein in an ultraviolet-visible absorption spectrum of the quantum dots the first absorption peak is in a wavelength range of less than or equal to 510 nanometers.
12. The quantum dots of claim 11 , wherein the maximum photoluminescence peak of the quantum dots has a full width at half maximum of less than or equal to 40 nanometers.
13. The quantum dots of claim 11 , wherein the ratio of the absorption value at 450 nanometers to the absorption value at the first absorption peak is greater than or equal to about 0.78.
14. The quantum dots of claim 11 , wherein the valley depth is greater than about 0.5 and less than or equal to 0.58.
15. The quantum dots of claim 11 , wherein the valley depth is greater than or equal to about 0.53.
16. The quantum dots of claim 11 , wherein the quantum dots do not comprise cadmium, and
the quantum dots comprises a mole ratio of sulfur with respect to selenium (S:Se) of less than or equal to about 2.5:1.
17. The quantum dots of claim 11 , wherein the quantum dots comprises a mole ratio of sulfur with respect to selenium (S:Se) is greater than or equal to about 0.05:1 and less than or equal to about 0.8:1.
18. A display device, comprising
a light source and a light emitting element,
wherein the light emitting element comprises a quantum dot-polymer composite with the quantum dots of claim 1 , and the light source is configured to provide the element with incident light.
19. The display device of claim 18 , wherein the quantum dot polymer composite comprises a first repeating section to emit a first light and a second repeating section to emit a second light, and wherein the second light has a different maximum photoluminescent peak wavelength from a maximum photoluminescent peak wavelength of the first light.
20. A display device, comprising
a light source and a light emitting element,
wherein the light emitting element comprises a quantum dot-polymer composite with the quantum dots of claim 11 , and the light source is configured to provide the light emitting element with incident light.
21. The display device of claim 20 , wherein the quantum dot polymer composite comprises a first repeating section to emit a first light and a second repeating section to emit a second light, and wherein the second light has a different maximum photoluminescent peak wavelength from a maximum photoluminescent peak wavelength of the first light.