Selective single-level memory cell operation

1. A method comprising:

selectively configuring a first subset of non-volatile memory blocks of a plurality of non-volatile memory blocks of a non-volatile memory to operate in a single-level mode responsive to detection of a backup power supply failure event;

configuring the first subset of non-volatile memory blocks to collectively operate as a pseudo single-level cache;

writing data associated with performance of a memory operation to the first subset of non-volatile memory blocks configured as the pseudo single-level cache; and

migrate the data from the first subset of non-volatile memory blocks configured as the pseudo single-level cache to a second subset of non-volatile memory blocks of the plurality of non-volatile memory blocks.

2. The method of claim 1 , further comprising selectively configuring free non-volatile memory blocks to operate in the single-level mode.

3. The method of claim 2 , further comprising:

maintaining a quantity of blocks in a free block pool that is equal to or greater than a target quantity of blocks; and

selectively configuring, from the free block pool, the free non-volatile memory blocks to operate in the single-level mode until a quantity of blocks in the first subset of non-volatile memory blocks is equal to the target quantity of blocks.

4. The method of claim 1 , further comprising determining a target quantity block in the first subset of non-volatile memory blocks based on an expected operational lifetime of the first subset of non-volatile memory blocks, the second subset of non-volatile memory blocks, or both.

5. The method of claim 1 , further comprising determining, based on comparison of an expected operational lifetime of the second subset of the plurality of non-volatile memory blocks, a target quantity of the first subset of the plurality of non-volatile memory blocks.

6. The method of claim 1 , further comprising designating, based on an expected operation lifetime of the first subset of the plurality of non-volatile memory blocks being equal to an expected operational lifetime of the second subset of the plurality of non-volatile memory blocks, a target quantity of the first subset of the plurality of non-volatile memory blocks.

7. The method of claim 1 , wherein selectively configuring the first subset of non-volatile memory blocks to operate in the single-level mode further comprises generating a target quantity of the first subset of the plurality of non-volatile memory blocks blocks of non volatile memory subsequent to detection of the backup power supply failure event.

8. The method of claim 1 , further comprising writing data, associated with performance of a plurality of memory operations, to sequential blocks of non-volatile memory included in the first subset of the plurality of non-volatile memory blocks.

9. An apparatus, comprising:

a volatile memory;

a non-volatile memory comprising non-volatile memory blocks; and

a controller configured to:

selectively configure a first subset of non-volatile memory blocks of the non-volatile memory to operate:

in a single-level mode responsive to detection of a backup power supply failure event; and

in a multi-level mode, triple-level mode, quad-level mode, or penta-level mode in an absence of detection of the backup power supply failure event;

in response to receipt of signaling indicative of an access request from a host, write data associated with performance of a memory operation to the volatile memory;

write the data from the volatile memory to the first subset of non-volatile memory blocks; and

migrate the data from the first subset of the non-volatile memory blocks to a second subset of non-volatile memory blocks of the non-volatile memory.

10. The apparatus of claim 9 , wherein the first subset of the non-volatile memory blocks has a respective block size that is less than a respective block size of the second subset of non-volatile memory blocks.

11. The apparatus of claim 9 , wherein the first subset of blocks of non-volatile memory has a page size that is less than a page size of the second subset of blocks of non-volatile memory.

12. The apparatus of claim 9 , wherein a sum of a first quantity of the first subset of non-volatile memory blocks and a second quantity of the second subset of non-volatile memory blocks is equal to a total block count of the non-volatile memory.

13. A system comprising:

a memory sub-system comprising:

a volatile memory; and

a non-volatile memory; and

a processing device coupled to the memory sub-system, the processing device to perform operations comprising:

operate the volatile memory in accordance with a write-back cache policy;

configure a first portion of the non-volatile memory to operate:

in a single-level mode as a pseudo single-level cache responsive to detection of a backup power supply failure event; and

in a multi-level mode, triple-level mode, quad-level mode, or Penta-level mode in an absence of detection of the backup power supply failure event;

write data from the volatile memory to the first portion of the non-volatile memory configured to operate as the pseudo single-level cache; and

responsive to a threshold amount of data being written to the first portion of the non-volatile memory, internally migrate the data from the first portion of the non-volatile memory to a second portion of the non-volatile memory.

14. The system of claim 13 , further comprising configuring each block in the first portion of the non-volatile memory, to operate collectively as a pseudo single-level cache by assigning consecutive block index numbers to each block in the first portion; and wherein the operations further include:

write data, associated with performance of a first memory operation, to a first block, having a first block index value, in the pseudo single-level cache; and

write data, associated with performance of a second memory operation subsequent to the first memory operation, to a second block, in the pseudo single-level cache, that has a second block index value in the pseudo single-level cache, wherein the first block index value and the second block index value are consecutive block index values.

15. The system of claim 13 , wherein the non-volatile memory is comprised of multi-level cells, triple level cells, quad-level cells, or penta-level cells.

16. The system of claim 13 , wherein the threshold amount of data is equal to a page size of a page included in a non-volatile memory block in the second portion of the non-volatile memory.

17. The system of claim 13 , wherein responsive to the detection of the backup power supply failure event, the processing device is further to operate the volatile memory in accordance with a write-through cache policy.