COMPOSITION, LAYER INCLUDING THE COMPOSITION, LIGHT-EMITTING DEVICE INCLUDING THE COMPOSITION, AND ELECTRONIC APPARATUS INCLUDING THE LIGHT-EMITTING DEVICE
A composition including a first compound and a second compound, wherein the first compound is an organometallic compound including platinum and a tetradentate ligand bound thereto, and the second compound is an organometallic compound including iridium, μ(Pt) is about 0.5 debye to about 5.0 debye, μ(Pt) is less than μ(Ir), μ(Pt) is a dipole moment of the first compound, μ(Ir) is a dipole moment of the second compound, and each of μ(Pt) and μ(Ir) is calculated based on density functional theory as described herein.
1 . A composition, comprising:
a first compound; and
a second compound,
wherein
the first compound is an organometallic compound comprising platinum and a tetradentate ligand bound to the platinum,
the second compound is an organometallic compound comprising iridium,
μ(Pt) is about 0.5 debye to about 5.0 debye,
μ(Pt) is less than μ(Ir),
μ(Pt) is a dipole moment of the first compound,
μ(Ir) is a dipole moment of the second compound, and
each of μ(Pt) and μ(Ir) is calculated based on density functional theory.
2 . The composition of claim 1 , wherein μ(Pt) is about 1.5 debye to about 5.0 debye.
3 . The composition of claim 1 , wherein μ(Ir) is about 4.0 debye to about 9.0 debye.
4 . The composition of claim 1 , wherein μ(Ir)-μ(Pt) is about 0.3 debye to about 4.0 debye.
5 . The composition of claim 1 , wherein
the first compound emits a first light having a first spectrum, and λP(Pt) is an emission peak wavelength of the first spectrum,
the second compound emits a second light having a second spectrum, and λP(Ir) is an emission peak wavelength of the second spectrum,
λP(Pt) is evaluated from a first photoluminescence spectrum measured for a first film,
λP(Ir) is evaluated from a second photoluminescence spectrum measured for a second film,
the first film comprises the first compound,
the second film comprises the second compound, and
an absolute value of a difference between λP(Pt) and λP(Ir) is 0 nanometers to about 30 nanometers.
6 . The composition of claim 5 , wherein the absolute value of the difference between λP(Pt) and λP(Ir) is 0 nanometers to about 10 nanometers.
7 . The composition of claim 5 , wherein each of λP(Pt) and λP(Ir) is about 510 nanometers to about 540 nanometers.
8 . The composition of claim 5 , wherein each of λP(Pt) and λP(Ir) is about 540 nanometers to about 570 nanometers.
9 . The composition of claim 1 , wherein the first compound is an organometallic compound comprising:
a chemical bond between a carbon atom of the tetradentate ligand and platinum, and
a chemical bond between an oxygen atom of the tetradentate ligand and platinum.
10 . The composition of claim 1 , wherein
the second compound comprises a first ligand, a second ligand, and a third ligand, wherein:
the first ligand, the second ligand, and the third ligand are identical to each other,
the first ligand and the second ligand are identical to each other, and the second ligand and the third ligand are different from each other, or
the first ligand, the second ligand, and the third ligand are different from each other, and
each of the first ligand, the second ligand, and the third ligand comprises:
a bidentate ligand bound to the iridium of the second compound via two nitrogen atoms;
a bidentate ligand bound to iridium of the second compound via a nitrogen atom and a carbon atom; or
a bidentate ligand bound to iridium of the second compound via two carbon atoms.
11 . A layer, comprising the composition of claim 1 .
12 . A light-emitting device, comprising:
a first electrode;
a second electrode; and
an organic layer arranged between the first electrode and the second electrode,
wherein the organic layer comprises an emission layer, and
wherein the organic layer comprises the composition of claim 1 .
13 . The light-emitting device of claim 12 , wherein the emission layer comprises the composition.
14 . The light-emitting device of claim 13 , wherein
the emission layer comprises a host and a dopant,
the host does not comprise a transition metal, and
the dopant comprises the composition.
15 . The light-emitting device of claim 14 , wherein the host comprises a hole-transporting compound, an electron-transporting compound, a bipolar compound, or a combination thereof.
16 . The light-emitting device of claim 13 , wherein the emission layer emits a third light having a third spectrum, and λP(EML) is an emission peak wavelength of the third spectrum,
λP(EML) is evaluated from an electroluminescence spectrum of the light-emitting device, and
λP(EML) is about 510 nanometers to about 570 nanometers.
17 . The light-emitting device of claim 13 , wherein
the first compound emits a first light having a first spectrum, and λP(Pt) is an emission peak wavelength of the first spectrum,
the second compound emits a second light having a second spectrum, and λP(Ir) is an emission peak wavelength of the second spectrum,
the emission layer emits a third light having a third spectrum, and λP(EML) is an emission peak wavelength of the third spectrum,
λP(Pt) is evaluated from a first photoluminescence spectrum measured for a first film,
λP(Ir) is evaluated from a second photoluminescence spectrum measured for a second film,
the first film comprises the first compound,
the second film comprises the second compound, and
λP(EML) is evaluated from an electroluminescence spectrum of the light-emitting device, and
an absolute value of a difference between λP(Pt) and λP(Ir) is 0 nanometers to about 30 nanometers,
an absolute value of a difference between λP(EML) and λP(Pt) is 0 nanometers to about 30 nanometers, and
an absolute value of a difference between λP(EML) and λP(Ir) is 0 nanometers to about 30 nanometers.
18 . The light-emitting device of claim 17 , wherein
the absolute value of the difference between λP(Pt) and λP(Ir) is 0 nanometers to about 10 nanometers,
the absolute value of the difference between λP(EML) and λP(Pt) is 0 nanometers to about 10 nanometers, and
the absolute value of the difference between λP(EML) and λP(Ir) is 0 nanometers to about 10 nanometers.
19 . The light-emitting device of claim 17 , wherein
λP(Pt)=λP(Ir)=λP(EML),
λP(Pt)≤λP(Ir)<λP(EML),
λP(Pt)<λP(Ir)≤λP(EML),
λP(Ir)≤λP(Pt)<λP(EML), or
λP(Ir)<λP(Pt)≤λP(EML).
20 . An electronic apparatus, comprising the light-emitting device of claim 12 .