Light-emitting device and electronic apparatus including the same
Provided are a light-emitting device and an electronic apparatus including the same. The light-emitting device includes a first electrode, a second electrode facing the first electrode, and an emission layer between the first electrode and the second electrode, wherein the first electrode is a reflective electrode, the emission layer includes i) a first emission layer, ii) a second emission layer, or a combination thereof, wherein when the first emission layer and the second emission layer are both present, then the second emission layer is located between the first emission layer and the second electrode, the first emission layer includes a first compound capable of emitting first light having a first spectrum, λP(1) is an emission peak wavelength (nm) of the first spectrum, the second emission layer includes a second compound capable of emitting second light having a second spectrum, λP(2) is an emission peak wavelength (nm) of the second spectrum, the emission layer may emit third light having a third spectrum, λP(3) is an emission peak wavelength (nm) of the third spectrum, λP(1) is less than λP(2), |λP(1)−λP(2)| is greater than 0 nm and less than or equal to 30 nm, and each of |λP(2)−λP(3)| and |λP(3)−λP(1)| is greater than or equal to 0 nm and less than or equal to 30 nm.
1 . A light-emitting device comprising:
a first electrode;
a second electrode facing the first electrode; and
an emission layer between the first electrode and the second electrode, wherein the first electrode is a reflective electrode,
the emission layer comprises: i) a first emission layer; and ii) a second emission layer between the first emission layer and the second electrode, and the second electrode is a transparent electrode or a semi-transparent electrode,
the first emission layer comprises a first compound that emits a first light having an emission peak wavelength λP(1) in nm,
the second emission layer comprises a second compound that emits a second light having an emission peak wavelength λP(2) in nm,
wherein the first compound and the second compound are different from each other,
wherein the emission layer emits a third light having an emission peak wavelength λP(3) in nm,
λP(1) is less than λP(2),
|λP(1)−λP(2)| is greater than 0 nm and less than or equal to about 30 nm,
each of |λP(2)−λP(3)| and |λP(3)−λP(1)| is greater than or equal to 0 nm and less than or equal to about 30 nm,
λP(1) and λP(2) are evaluated from photoluminescence spectra measured for a first film and a second film, respectively,
the first film comprises a first compound,
the second film comprises a second compound, and
λP(3) is evaluated from an electroluminescence spectrum of the light-emitting device,
wherein the third light is extracted to outside through the second electrode, and
wherein at least one of condition i) or condition ii) is true:
i) the first compound and the second compound are independently organometallic phosphorescent compounds including platinum or iridium; and
ii) each of λP(1), λP(2), and λP(3) is about 500 nm to 570 nm, or each of λP(1), λP(2), and λP(3) is about 570 nm to 630 nm.
2 . The light-emitting device of claim 1 , wherein the first electrode is an anode, and
the second electrode is a cathode.
3 . The light-emitting device of claim 1 , wherein |λP(1)−λP(2)| is greater than 0 nm and less than or equal to about 10 nm.
4 . The light-emitting device of claim 1 , wherein each of |λP(2)−λP(3)| and |λP(3)−λP(1)| is greater than or equal to 0 nm and less than or equal to about 15 nm.
5 . The light-emitting device of claim 1 , wherein
λP(1)<λP(2)≤λP(3), i)
λP(1)≤λP(3)<λP(2), ii)
λP(1)<λP(3)≤λP(2), or iii)
λP(3)≤λP(1)<λP(2). iv)
6 . The light-emitting device of claim 1 , wherein condition ii) is true, and each of λP(1), λP(2), and λP(3) is about 500 nm to about 570 nm.
7 . The light-emitting device of claim 6 , wherein
i) λP(1) is about 510 nm to about 530 nm, λP(2) is about 520 nm to about 540 nm, and λP(3) is about 510 nm to about 540 nm, or
ii) λP(1) is about 540 nm to about 560 nm, λP(2) is about 550 nm to about 570 nm, and λP(3) is about 540 nm to about 570 nm.
8 . The light-emitting device of claim 1 , wherein condition ii) is true, and each of λP(1), λP(2), and λP(3) is about 570 nm to about 650 nm.
9 . The light-emitting device of claim 8 , wherein λP(1) is about 590 nm to about 630 nm, λP(2) is about 620 nm to about 650 nm, and λP(3) is about 590 nm to about 650 nm.
10 . The light-emitting device of claim 1 , wherein condition i) is true, and each of λP(1), λP(2), and λP(3) is about 400 nm to about 500 nm.
11 . The light-emitting device of claim 10 , wherein λP(1) is 430 nm to 480 nm, λP(2) is about 460 nm to about 500 nm, and λP(3) is about 430 nm to about 500 nm.
12 . The light-emitting device of claim 1 , wherein Condition A is satisfied:
CD(1)<CD(2) Condition A
wherein, in Condition A,
CD(1) is a current density in mA/cm 2 of a first light-emitting device,
CD(2) is a current density in mA/cm 2 of a second light-emitting device,
CD(1) and CD(2) are evaluated by measuring current densities of the first light-emitting device and the second light-emitting device under same voltage,
the first light-emitting device comprises:
a first electrode; a second electrode facing the first electrode; and an emission layer E1 between the first electrode and the second electrode,
the emission layer E1 of the first light-emitting device corresponds to the first emission layer, and does not comprise the second emission layer,
the second light-emitting device comprises:
a first electrode; a second electrode facing the first electrode, and an emission layer E2 between the first electrode and the second electrode,
the emission layer E2 of the second light-emitting device corresponds to the second emission layer, and does not comprise the first emission layer, and
a structure of the first light-emitting device excluding the emission layer E1 and a structure of the second light-emitting device excluding the emission layer E2 are identical to each other.
13 . The light-emitting device of claim 1 , wherein the third spectrum comprises a main emission peak having λP(3), and
the third spectrum does not comprise an additional emission peak having an emission peak wavelength of λP(3)+about 50 nm or more or λP(3)−about 50 nm or less.
14 . The light-emitting device of claim 1 , further comprising a hole transport region between the first electrode and the emission layer and an electron transport region between the emission layer and the second electrode.
15 . The light-emitting device of claim 1 , wherein the first emission layer further comprises a first host, and the second emission layer further comprises a second host.
16 . An electronic apparatus comprising the light-emitting device of claim 1 .
17 . A light-emitting device comprising:
a first electrode; a second electrode facing the first electrode; and an emission layer between the first electrode and the second electrode, wherein the first electrode is a reflective electrode,
the emission layer comprises: i) a first emission layer; and ii) a second emission layer between the first emission layer and the second electrode, and the second electrode is a transparent electrode or a semi-transparent electrode,
the first emission layer comprises a first compound capable of emitting a first light having a first spectrum, and λP(1) is an emission peak wavelength in nm,
the second emission layer comprises a second compound capable of emitting a second light having a second spectrum, and λP(2) is an emission peak wavelength in nm,
wherein the first compound and the second compound are different from each other, the emission layer emits a third light having a third spectrum, and λP(3) is an emission peak wavelength in nm,
λP(1) is less than λP(2), and |λP(1)−λP(2)| is greater than 0 nm and less than or equal to about 30 nm,
each of |λP(2)−λP(3)| and |λP(3)−λP(1)| is greater than or equal to 0 nm and less than or equal to about 30 nm,
λP(1) and λP(2) are evaluated from photoluminescence spectra measured for a first film and a second film, respectively,
the first film comprises a first compound,
the second film comprises a second compound, and
λP(3) is evaluated from an electroluminescence spectrum of the light-emitting device,
wherein the third light is extracted to outside through the second electrode, and Condition A is satisfied:
CD(1)<CD(2) Condition A
wherein, in Condition A,
CD(1) is a current density in mA/cm 2 of a first light-emitting device,
CD(2) is a current density in mA/cm 2 of a second light-emitting device,
CD(1) and CD(2) are evaluated by measuring current densities of the first light-emitting device and the second light-emitting device under same voltage,
wherein the first light-emitting device comprises:
a first electrode; a second electrode facing the first electrode; and an emission layer E1 between the first electrode and the second electrode,
the emission layer E1 of the first light-emitting device corresponds to the first emission layer, and does not comprise the second emission layer,
wherein the second light-emitting device comprises:
a first electrode; a second electrode facing the first electrode, and an emission layer E2 between the first electrode and the second electrode,
the emission layer E2 of the second light-emitting device corresponds to the second emission layer, and does not comprise the first emission layer, and
a structure of the first light-emitting device excluding the emission layer E1 and a structure of the second light-emitting device excluding the emission layer E2 are identical to each other.
18 . The light-emitting device of claim 17 , wherein
i) λP(1) is about 510 nm to about 530 nm, λP(2) is about 520 nm to about 540 nm, and λP(3) is about 510 nm to about 540 nm;
ii) λP(1) is about 540 nm to about 560 nm, λP(2) is about 550 nm to about 570 nm, and λP(3) is about 540 nm to about 570 nm;
iii) λP(1) is about 590 nm to about 630 nm, λP(2) is about 620 nm to about 650 nm, and λP(3) is about 590 nm to about 650 nm; or
iv) λP(1) is 430 nm to 480 nm, λP(2) is about 460 nm to about 500 nm, and λP(3) is about 430 nm to about 500 nm.
19 . The light-emitting device of claim 17 , wherein
|λP(1)−λP(2)| may be greater than 0 nm and less than or equal to about 10 nm, and
|λP(2)−λP(3)| and |λP(3)−λP(1)| may be greater than or equal to 0 nm and less than or equal to about 15 nm.