Laser devices using a semipolar plane
An optical device includes a gallium and nitrogen containing substrate comprising a surface region configured in a (20-2-1) orientation, a (30-3-1) orientation, or a (30-31) orientation, within +/−10 degrees toward c-plane and/or a-plane from the orientation. Optical devices having quantum well regions overly the surface region are also disclosed.
1. A system comprising:
a housing;
a laser diode device disposed within the housing;
a power source electrically coupled to the laser diode device; wherein the laser diode device is configured to emit electromagnetic radiation with a peak wavelength of between 400 nm and 500 nm or between 500 nm and 560 nm; and
an application configured with the laser diode device, wherein the application is selected from one of a laser display application, a metrology application, a communications application, a health care application, a surgery application, a projector application, a pointer or illuminator application, a biomedical instrumentation application, a biomedical therapeutics application, an industrial imaging application, or an information technology application, the laser diode device comprising:
a gallium and nitrogen containing material comprising a semipolar surface configured on a (30-3-1) orientation, a (30-31) orientation, a (20-2-1) orientation, or a (30-3-2) orientation, the semipolar surface having an offcut of the orientation from between +/−5 degrees toward a c-plane and between +/−10 degrees toward an a-plane;
an n-type cladding region overlying the semipolar surface;
an active region comprising at least one light emitting active layer region overlying the n-type cladding region;
a p-type cladding region overlying the active region;
a conductive oxide overlying the p-type cladding region;
a laser stripe region comprising at least a portion of the p-type cladding region and the conductive oxide;
a first facet provided on a first end of the laser stripe region; and
a second facet provided on a second end of the laser stripe region.
2. The system of claim 1 , wherein the active region contains a plurality of quantum well regions comprising 1 to 7 quantum wells, each of the quantum well regions comprising substantially InGaN; the plurality of quantum well regions ranging in thickness from 2 nm to 5 nm or from 5 nm to 10 nm; or wherein the active region contains a double heterostructure region; the double heterostructure region ranging in thickness from 10 nm to about 25 nm.
3. The system of claim 1 , wherein the first facet and the second facet are etched facets.
4. The system of claim 1 , wherein the conductive oxide comprises at least one of indium tin oxide (ITO) or zinc oxide (ZnO).
5. The system of claim 1 , further comprising a p-type gallium and nitrogen containing layer overlying the active region and underlying the conductive oxide.
6. A system comprising:
a housing;
a blue laser device;
a power source electrically coupled to the blue laser device; and
an application configured with the blue laser device, the blue laser device comprising:
a gallium and nitrogen containing material comprising a semipolar surface configured on a (30-3-1) orientation, a (30-31) orientation, a (20-2-1) orientation, a (20-21) orientation, or a (30-3-2) orientation, the semipolar surface having an offcut of the orientation from between +/−5 degrees toward a c-plane and between +/−10 degrees toward an a-plane;
an n-type cladding region overlying the semipolar surface;
an active region comprising at least one light emitting active layer region overlying the n-type cladding region;
a laser stripe region overlying the active region characterized by a cavity orientation substantially parallel to a projection of a c-direction, the laser stripe region having a first end and a second end;
a first facet provided on the first end of the laser stripe region; and
a second facet provided on the second end of the laser stripe region.
7. The system of claim 6 , wherein the active region contains a plurality of quantum well regions comprising 1 to 7 quantum wells, each of the quantum well regions comprising substantially InGaN; the plurality of quantum well regions ranging in thickness from 2 nm to 5 nm or from 5 nm to 10 nm; or wherein the active region contains a double heterostructure region; the double heterostructure region ranging in thickness from about 10 nm to about 25 nm.
8. The system of claim 6 , wherein the first facet and the second facet are formed using a lithography and etching process.
9. The system of claim 6 , wherein the laser stripe region comprises a conductive oxide of at least one of indium tin oxide (ITO) or zinc oxide (ZnO).
10. The system of claim 9 , further comprising a p-type gallium and nitrogen containing layer overlying the active region and underlying the conductive oxide.
11. The system of claim 6 , wherein the first facet and the second facet are etched facets.
12. The system of claim 6 , wherein the application is selected from one of a laser display application, a metrology application, a communications application, a health care application, a surgery application, a projector application, a pointer or illuminator application, a biomedical instrumentation application, a biomedical therapeutics application, an industrial imaging application, or an information technology application.
13. A system comprising:
a housing having an aperture;
a laser device;
a power source electrically coupled to the laser device; and
an application configured with the laser device, the laser device comprising:
a gallium and nitrogen containing material comprising a semipolar surface configured on a (30-31) orientation, a (30-31) orientation, a (20-2-1) orientation, a (20-21) orientation, or a (30-3-2) orientation, the semipolar surface having an offcut of the orientation from between +/−5 degrees toward a c-plane and between +/−10 degrees toward an a-plane;
an n-type cladding region overlying the semipolar surface;
an active region comprising at least one light emitting active layer region overlying the n-type cladding region;
a p-type cladding region overlying the active region;
a laser stripe region overlying a portion of the semipolar surface, the laser stripe region being characterized by a cavity orientation substantially parallel to a projection of a c-direction, the laser stripe region having a first end and a second end;
a first etched facet provided on the first end of the laser stripe region; and
a second etched facet provided on the second end of the laser stripe region.
14. The system of claim 13 , wherein the application is selected from one of a laser display application, a metrology application, a communications application, a health care application, a surgery application, a projector application, a pointer or illuminator application, a biomedical instrumentation application, a biomedical therapeutics application, an industrial imaging application, or an information technology application.
15. The system of claim 13 , wherein the active region contains a plurality of quantum well regions comprising 1 to 7 quantum wells, each of the quantum well regions comprising substantially InGaN; the plurality of quantum well regions ranging in thickness from 2 nm to 5 nm or from 5 nm to 10 nm; or wherein the active region contains a double heterostructure region; the double heterostructure region ranging in thickness from 10 nm to about 25 nm.
16. The system of claim 13 , wherein the first facet and the second facet are etched facets.