Films comprising bright silver based quaternary nanostructures
Disclosed are films comprising Ag, In, Ga, and S (AIGS) nanostructures and at least one ligand bound to the nanostructures. In some embodiment, the AIGS nanostructures have a photon conversion efficiency of greater than 32% and a peak wavelength emission of 480-545 nm. In some embodiments, the nanostructures have an emission spectrum with a FWHM of 24-38 nm.
1. A method of preparing a film comprising Ag, In, Ga, and S (AIGS) nanostructures, comprising:
admixing at least one organic resin with AIGS nanostructures and at least one ligand to form an admixture;
preparing a first film comprising the admixture on a first barrier layer;
curing the film by UV irradiation and/or baking; and
encapsulating the first film between the first barrier layer and a second barrier layer;
wherein the encapsulated film exhibits a photon conversion efficiency (PCE) of greater than 32% at a peak emission wavelength of about 480-545 nm, when excited using a blue light source with a wavelength of about 450 nm;
wherein the nanostructures have an emission spectrum with a full width half maximum (FWHM) of less than 40 nm, and wherein the average diameter of the nanostructures is less than 10 nm by TEM.
2. The method of claim 1 , further comprising:
addition of at least one oxygen reactive material to the admixture,
forming a second film comprising at least one oxygen reactive material on top of the first film; or
forming a sacrificial barrier layer on the first film that temporarily blocks oxygen and/or water; measuring the PCE of the film, then removing the sacrificial barrier layer.
3. The method of claim 1 , wherein the method is configured to yield a film comprising AIGS nanostructures having an emission spectrum with a FWHM of 24-38 nm.
4. The method of claim 1 , wherein the method is configured to yield a film comprising AIGS nanostructures having a quantum yield (QY) of 80-99.9%.
5. The method of claim 4 , wherein the method is configured to yield a film comprising AIGS nanostructures having a QY of 85-95%.
6. The method of claim 1 , wherein the method is configured to yield a film comprising AIGS nanostructures having an OD 450 /mass greater than or equal to 0.8 mL mg −1 cm −1 , where OD 450 is the optical density of the film when irradiated with electromagnetic energy having of wavelength of 450 nm.
7. The method of claim 6 , wherein the method is configured to yield a film comprising AIGS nanostructures have an OD 450 /mass in the inclusive range 0.8-2.5 mL mg −1 cm −1 .
8. The method of claim 1 , wherein the method is configured to yield a film comprising AIGS nanostructures have an average diameter of about 5 nm.
9. The method of claim 1 , wherein the method is configured to yield a film comprising AIGS nanostructures such that at least about 80% of the emission is band-edge emission.
10. The method of claim 9 , wherein the method is configured to yield a film comprising AIGS nanostructures such that 92-98% of the emission is band-edge emission.
11. The method of claim 1 , wherein the admixing at least one ligand comprises admixing a polyamino ligand.
12. The method of claim 11 , wherein the admixing a polyamino ligand comprises admixing a polyamino alkane, a polyamino-cycloalkane, a polyamino heterocyclic compound, a polyamino functionalized silicone, or a polyamino substituted ethylene glycol.
13. The method of claim 11 , wherein the admixing a polyamino ligand comprises admixing a C 2-20 alkane or C 2-20 cycloalkane substituted by two or three amino groups and optionally containing one or two amino groups in place of a carbon group.
14. The method of claim 13 , wherein the admixing a polyamino ligand comprises admixing 1,3-cyclohexanebis(methylamine), 2,2-dimethyl-1,3-propanediamine, tris(2-aminoethyl)amine, or 2-methyl-1,5-diaminopentane.
15. The method of claim 1 , wherein the admixing at least one ligand comprises admixing a compound of Formula I:
wherein:
x is 1 to 100;
y is 0 to 100; and
R 2 is C 1-20 alkyl.
16. The method of claim 15 , wherein x=19, y=3, and R 2 ═—CH 3 .
17. The method of claim 1 , wherein the admixing a polyamino ligand comprises admixing (3-aminopropyl)trimethoxysilane); (3-mercaptopropyl)triethoxysilane; DL-α-lipoic acid; 3,6-dioxa-1,8-octanedithiol; 6-mercapto-1-hexanol; methoxypolyethylene glycol amine; poly(ethyleneglycol) methyl ether thiol; diethyl phenylphosphonite; dibenzyl N,N-diisopropylphosphoramidite; di-tert-butyl N,N-diisopropylphosphoramidite; tris(2-carboxyethyl)phosphine hydrochloride; poly(ethylene glycol) methyl ether thiol; methoxypolyethylene glycol amine; acrylamide; or polyethylenimine.
18. The method of claim 1 , wherein the admixing a polyamino ligand comprises admixing a combination of amino-polyalkylene oxide and methoxypolyethylene glycol amine; amino-polyalkylene oxide and 6-mercapto-1-hexanol; amino-polyalkylene oxide and (3-mercaptopropyl)triethoxysilane; or 6-mercapto-1-hexanol and methoxypolyethylene glycol amine.
19. The method of claim 1 , wherein the method is configured to yield a film that is 5-15 μm thick.