Precision tuning of a page or word of non-volatile memory cells in an analog neural memory system
Numerous examples for performing tuning of a page or a word of non-volatile memory cells in an analog neural memory are disclosed. In one example, a method comprises programming a word or page of non-volatile memory cells in an analog neural memory system; and identifying any fast bits in the word or page of non-volatile memory cells.
1. A method comprising:
programing a word or page of non-volatile memory cells in an analog neural memory system;
identifying any fast bits in the word or page of non-volatile memory cells;
erasing the word or page of non-volatile memory cells;
programming and verifying fast-bits in the word or page of non-volatile memory cells; and
programming and verifying non-fast-bits in the word or page of non-volatile memory cells:
wherein the programming of the fast-bits and the programming of the non-fast-bits utilize different programming sequences.
2. The method of claim 1 , wherein the identifying step comprises monitoring a programming rate of each cell in the word or page.
3. The method of claim 1 , wherein the identifying step comprises monitoring a current change over time during programming of each cell in the word or page.
4. The method of claim 1 , further comprising performing soft programming of the word or page of non-volatile memory cells.
5. The method of claim 1 , wherein the programming and verifying non-fast-bits comprises coarse programing of non-fast-bits.
6. The method of claim 5 , wherein the programming and verifying non-fast-bits comprises fine programming of non-fast-bits.
7. The method of claim 6 , further comprising:
after the fine programming, performing ultra-fine programming of non-fast-bits.