RF filter circuit including BAW resonators
An RF circuit device using modified lattice, lattice, and ladder circuit topologies. The devices can include four resonator devices and four shunt resonator devices. In the ladder topology, the resonator devices are connected in series from an input port to an output port while shunt resonator devices are coupled the nodes between the resonator devices. In the lattice topology, a top and a bottom serial configurations each includes a pair of resonator devices that are coupled to differential input and output ports. A pair of shunt resonators is cross-coupled between each pair of a top serial configuration resonator and a bottom serial configuration resonator. The modified lattice topology adds baluns or inductor devices between top and bottom nodes of the top and bottom serial configurations of the lattice configuration. These topologies may be applied using single crystal or polycrystalline bulk acoustic wave (BAW) resonators.
1. An RF filter, comprising:
a plurality of resonators arranged in a circuit, the circuit including a series configuration of resonators and a parallel shunt configuration of resonators, each of the resonators comprising:
a support member, portions of the support member defining a cavity and an upper surface of the support member;
a first electrode overlying the cavity;
a piezoelectric material overlying the upper surface of the support member and the first electrode;
a second electrode overlying the piezoelectric material and overlying the first electrode; and
an insulating material overlying the second electrode;
wherein,
one of the resonators of the plurality of resonators, comprises:
a via through the piezoelectric material; and
a metal contact physically coupled to the first electrode through the via of the piezoelectric material; and wherein,
one of the resonators of the plurality of resonators has at least a portion of the first electrode positioned within the cavity;
the circuit has a circuit response configured from the serial configuration and the parallel configuration of the plurality of resonators to achieve a transmission loss from a pass band having a characteristic frequency centered around 2.595 GHz and having a bandwidth from 2.515 GHz to 2.675 GHz; and
at least one of the second electrode and the insulating material of one of the resonators of the plurality of resonators has a thickness sufficient to provide the pass band with the characteristic frequency centered around 2.595 GHz and the bandwidth from 2.515 GHz to 2.675 GHz, the thickness being a first thickness, wherein at least one of the second electrode and the insulating material of one of the resonators of the plurality of resonators has a second thickness sufficient to tune the characteristic frequency centered around 2.595 GHz from a lower frequency ranging from about 2.0 GHz to 2.5 GHz to provide the pass band with the characteristic frequency centered around 2.595 GHz and the bandwidth from 2.515 GHz to 2.675 GHz, the second thickness being greater than the first thickness.
2. The filter of claim 1 , further comprising an air cavity reflector underlying the first electrode, the piezoelectric material, and the second electrode.
3. An RF filter, comprising:
a plurality of resonators arranged in a circuit, the circuit including a series configuration of resonators and a parallel shunt configuration of resonators, each of the resonators comprising:
a support member, portions of the support member defining an upper surface of the substrate;
a reflector structure included in the support member, the reflector structure including two pairs of a low impedance material layer and a high impedance material layer when the material layers are compared to each other;
a first electrode overlying the reflector structure;
a piezoelectric material overlying the upper surface of the support member and the first electrode;
a second electrode overlying the piezoelectric material and overlying the first electrode; and
an insulating material overlying the second electrode;
wherein,
one of the resonators of the plurality of resonators, comprises:
a via through the piezoelectric material; and
a metal contact physically coupled to the first electrode through the via of the piezoelectric material; and
wherein,
portions of the support member define an upper surface of the support member including a cavity region, and one of the resonators of the plurality of resonators has at least a portion of the first electrode positioned within the cavity region defined by the upper surface of the support member.
4. The filter of claim 3 wherein the first insulating material includes a silicon nitride bearing material or an oxide bearing material.
5. The filter of claim 3 , wherein the piezoelectric material includes a single crystal aluminum nitride (AlN) bearing material, a single crystal aluminum scandium nitride (AlScN) bearing material, a single crystal gallium nitride (GaN) bearing material, or a single crystal gallium aluminum nitride (GaAlN) bearing material.
6. The filter of claim 3 , wherein the piezoelectric material includes a polycrystalline aluminum nitride (AlN) bearing material, a polycrystalline aluminum scandium nitride (AlScN) bearing material, a polycrystalline gallium nitride (GaN) bearing material, or a polycrystalline gallium aluminum nitride (GaAlN) bearing material.
7. The filter of claim 3 , wherein the one resonator of the plurality of resonators having at least a portion of the first electrode located within the cavity region defined by the upper surface of the support member includes the first electrode being completely located within the cavity region of the support member such that a top surface of the first electrode aligns with the upper surface of the support member.
8. The filter of claim 3 , wherein,
the one resonator of the plurality of resonators including at least a portion of the first electrode located within the cavity region of the support member, and
the one resonator of the plurality of resonators comprising a via through the piezoelectric material, and a metal contact physically coupled to the first electrode through the via of the piezoelectric material, are the same resonator.
9. The filter of claim 3 , wherein the circuit including the series configuration of resonators and the parallel shunt configuration of resonators further comprises:
a first node;
a first shunt resonator coupled in parallel to the first node;
a second node coupled to the first node;
a first resonator coupled is series between the first node and the second node;
a second shunt resonator coupled in parallel to the second node;
a third node coupled to the second node;
a second resonator coupled in series between the second node and the third node a third shunt resonator coupled in parallel to the third node;
a fourth node coupled to the third node; and
a third resonator coupled is series between the third node and the fourth node.
10. The filter of claim 9 , further comprising:
an input port;
a fourth resonator coupled in series between the first node and the input port.
11. The filter of claim 10 , further comprising a fourth shunt resonator coupled in parallel to the fourth node.
12. The filter of claim 11 , further comprising one or more additional shunt resonators coupled to the fourth shunt resonator.
13. The filter of claim 10 , further comprising one or more additional resonators coupled to the fourth series resonator.
14. The filter of claim 9 , further comprising a fourth shunt resonator coupled in parallel to the fourth node.
15. The filter of claim 14 , further comprising an inductor coupled to at least one of the first shunt resonator, the second shunt resonator, the third shunt resonator, and the fourth shunt resonator.
16. The filter of claim 9 , further comprising an inductor coupled to at least one of the first shunt resonator, the second shunt resonator, and the third shunt resonator.
17. The filter of claim 16 , wherein the inductor is located off of the substrate that includes the plurality of resonators.
18. The filter of claim 9 , further comprising one or more additional shunt resonators coupled to at least one of the first shunt resonator, the second shunt resonator, and the third shunt resonator.
19. The filter of claim 9 , further comprising one or more additional resonators coupled to at least one of the first series resonator, the second series resonator, and the third series resonator.
20. The filter of claim 9 , wherein the circuit further comprises a matching element configured to contribute to a characteristic of the circuit.
21. The filter of claim 20 , wherein the matching element is configured to contribute to the frequency pass band of the circuit or match impedance in the circuit.
22. The filter of claim 20 , wherein the matching element is located off of the substrate that includes the plurality of resonators.
23. The filter of claim 22 , wherein the matching element includes an inductor.
24. The filter of claim 20 , wherein the matching element is coupled to at least one of the first node, the second, and the third node.
25. The filter of claim 20 , wherein the matching element includes an inductor.
26. The filter of claim 9 , wherein the first node is an electrical input node.
27. The filter of claim 9 , wherein the fourth node is an electrical output node.
28. The filter of claim 3 , wherein the circuit has a circuit response configured from the serial configuration and the parallel configuration of the plurality of resonators to achieve a transmission loss from a pass band having a characteristic frequency centered around 2.595 GHz and having a bandwidth from 2.515 GHz to 2.675 GHz.