SiC P-TYPE, AND LOW RESISTIVITY, CRYSTALS, BOULES, WAFERS AND DEVICES, AND METHODS OF MAKING THE SAME
A doped SiOC liquid starting material provides a p-type polymer derived ceramic SiC crystalline materials, including boules and wafers. P-type SiC electronic devices. Low resistivity SiC crystals, wafers and boules, having phosphorous as a dopant. Polymer derived ceramic doped SiC shaped charge source materials for vapor deposition growth of doped SiC crystals.
1 . A doped polysilocarb precursor material, for use in making a doped SiC crystal, the precursor material comprising:
a. a dopant, wherein the dopant comprises a number of donor atoms, a number of acceptor atoms or both;
b. silicon, carbon, and oxygen;
c. wherein the dopant is about 10% or less by weight of a total weight of the doped polysilocarb precursor material;
d. wherein the dopant is covalently bonded to at least one of silicon, carbon or oxygen;
e. wherein the doped polysilocarb precursor material defines a potential net carrier concentration (pNC); wherein pNC=the number of donor atoms−the number of acceptor atoms.
2 . The doped polysilocarb precursor material of claim 1 , wherein the pNC is positive.
3 . The doped polysilocarb precursor material of claim 2 , wherein there are at least 1×10 18 more donor atoms than acceptor atoms.
4 . The doped polysilocarb precursor material of claim 3 , wherein the number of acceptor atoms is less than 1×10 14 .
5 . The doped polysilocarb precursor material of claim 3 , wherein the number of acceptor atoms is less than 1×10 10 .
6 . The doped polysilocarb precursor material of claim 1 , wherein the donor atoms are selected from one or more of the elements in Group 15 of the periodic table.
7 . The doped polysilocarb precursor material of claim 1 , wherein the donor atoms comprise phosphorous.
8 . The doped polysilocarb precursor material of claim 1 , wherein the donor atoms consist essentially of phosphorous.
9 . The doped polysilocarb precursor material of claim 1 , wherein the donor atom comprises phosphorous; wherein the covalent bond is formed with phosphorous; and, the polysilocarb precursor further comprising one or more of:
a. ˜Si—O—P—R, where R is an alkyl group, a phenyl group, or a styrenyl group;
b. ˜Si—C—C—P—R, wherein R is an alkene group, a styrenyl group, an alkyl group or a phenyl group; and,
c. (˜Si—O) 3 —P═O.
10 . The doped polysilocarb precursor material of claim 1 , wherein the precursor material is a cured solid material.
11 . The doped polysilocarb precursor material of claim 1 , wherein the pNC is negative.
12 . The doped polysilocarb precursor material of claim 2 , wherein there are at least 1×10 18 more acceptor atoms than donor atoms.
13 . The doped polysilocarb precursor material of claim 3 , wherein the number of donor atoms is less than 1×10 14 .
14 . The doped polysilocarb precursor material of claim 3 , wherein the number of donor atoms is less than 1×10 10 .
15 . The doped polysilocarb precursor material of claim 11 , wherein the acceptor atoms are selected from one or more of the elements in Group 13 of the periodic table.
16 . The doped polysilocarb precursor material of claim 1 , wherein the acceptor atoms comprise boron.
17 . The doped polysilocarb precursor material of claim 11 , wherein the acceptor atoms consist essentially of boron.
18 . The doped polysilocarb precursor material of claim 1 , wherein the acceptor atoms comprise aluminum.
19 . The doped polysilocarb precursor material of claim 11 , wherein the acceptor atoms consist essentially of aluminum.
20 . The doped polysilocarb precursor material of claim 11 , wherein the acceptor atoms comprise aluminum; and wherein the precursor material contains no alloys, and is thereby alloy free.
21 . The doped polysilocarb precursor material of claim 11 , wherein the acceptor atoms consist essentially of aluminum; and wherein the precursor material contains no alloys, and is thereby alloy free.
22 . The doped polysilocarb precursor material of claim 1 , wherein the precursor material contains no alloys, and is thereby alloy free.
23 . The doped polysilocarb precursor material of claim 1 , wherein the acceptor atom comprises aluminum; wherein the covalent bond is formed with aluminum; and, the polysilocarb precursor further comprising one or more of:
a. 2Al—(O—Si˜) 3 ;
b. 2Al—(O—Si˜) 3 ; and,
c. Al 2 O 3 .
24 . The doped polysilocarb precursor material of claim 1 , wherein the acceptor atom comprises boron; wherein the covalent bond is formed with boron; and, the polysilocarb precursor further comprising one or more of:
a. 2B—(O—Si˜) 3 ; and,
b. B—C—C—Si˜.
25 . The doped polysilocarb precursor material of claim 11 , wherein the precursor material is a cured solid material.
26 . A doped shaped charge source material, for use in making a p-type SiC crystal, the shaped charge source material comprising:
a. a porous matrix comprising Si, C and a number of impurity atoms, wherein the impurity atoms comprise a number of donor atoms, a number of acceptor atoms or both;
b. wherein the impurity atoms are less than 5% by weight of a total weight of the doped shaped charge source material; and,
c. wherein the doped shaped charge source material defines a potential net carrier concentration (pNC); wherein pNC=the number of donor atoms−the number of acceptor atoms.
27 . The doped shaped charge source material of claim 26 , wherein the pNC is positive.
28 . The doped shaped charge source material of claim 26 , wherein there are at least 1×10 18 more donor atoms than acceptor atoms.
29 . The doped shaped charge source material of claim 26 , wherein the number of acceptor atoms is less than 1×10 14 .
30 . The doped shaped charge source material of claim 26 , wherein the number of acceptor atoms is less than 1×10 10 .
31 . The doped shaped charge source material of claim 26 , wherein the donor atoms are selected from one or more of the elements in Group 15 of the periodic table.
32 . The doped shaped charge source material of claim 26 , wherein the donor atoms comprise phosphorous.
33 . The doped shaped charge source material of claim 26 , wherein the donor atoms consist essentially of phosphorous.
34 . The doped shaped charge source material of claim 26 , wherein the pNC is negative.
35 . The doped shaped charge source material of claim 26 , wherein there are at least 1×10 18 more acceptor atoms than donor atoms.
36 . The doped shaped charge source material of claim 26 , wherein the number of donor atoms is less than 1×10 14 .
37 . The doped shaped charge source material of claim 26 , wherein the number of donor atoms is less than 1×10 10 .
38 . The doped shaped charge source material of claim 26 , wherein the acceptor atoms are selected from one or more of the elements in Group 13 of the periodic table.
39 . The doped shaped charge source material of claim 26 , wherein the acceptor atoms comprise boron.
40 . The doped shaped charge source material of claim 34 , wherein the acceptor atoms consist essentially of boron.
41 . The doped shaped charge source material of claim 26 , wherein the acceptor atoms comprise aluminum.
42 . The doped shaped charge source material of claim 34 , wherein the acceptor atoms consist essentially of aluminum.
43 . The doped shaped charge source material of claim 34 , wherein the acceptor atoms comprise aluminum; and wherein the precursor material contains no alloys, and is thereby alloy free.
44 - 77 . (canceled)