SiC P-TYPE, AND LOW RESISTIVITY, CRYSTALS, BOULES, WAFERS AND DEVICES, AND METHODS OF MAKING THE SAME
A doped SiOC liquid starting material provides a p-type polymer derived ceramic SiC crystalline materials, including boules and wafers. P-type SiC electronic devices. Low resistivity SiC crystals, wafers and boules, having phosphorous as a dopant. Polymer derived ceramic doped SiC shaped charge source materials for vapor deposition growth of doped SiC crystals.
1 . A p-type SiC wafer having a diameter from about 4″ (100 mm) to about 6″ (150 mm); a thickness from about 300 μm to about 600 μm; acceptor atoms; and a resistivity of from about 0.015 to about 0.028 ohm-cm.
2 . The p-type wafer of claim 1 , further having a polytype selected from the group consisting of 4H and 6H.
3 . The p-type wafer of claim 1 , wherein the acceptor atoms comprise, aluminum, boron, or a combination of aluminum and boron.
4 . The p-type wafer of claim 1 , wherein the wafer has an N A of at least 10 18 /cm 3 .
5 . The p-type wafer of claim 1 , wherein the wafer has an N A from 10 18 /cm 3 to about 10 20 /cm 3 .
6 . (canceled)
7 . The p-type wafer of claim 1 , further having an orientation of <0001>+/−0.5 degrees.
8 . (canceled)
9 . (canceled)
10 . The p-type wafer of claim 1 , further having a TTV of <15 μm.
11 . (canceled)
12 . (canceled)
13 . (canceled)
14 . (canceled)
15 . A p-type SiC wafer having a diameter from about 4″ (100 mm) to about 6″ (150 mm); a thickness from about 325 μm to about 500 μm; acceptor atoms; and a resistivity of 2.0 ohm-cm and less.
16 . The p-type SiC wafer of claim 15 , wherein the resistivity is from 2.0 ohm-cm to about 0.1 ohm-cm.
17 . The p-type SiC wafer of claim 15 , wherein the resistivity is 0.13 ohm-cm and less.
18 . The p-type SiC wafer of claim 15 , wherein the resistivity is from 0.013 ohm-cm to about 0.004 ohm-cm.
19 . The p-type SiC wafer of claim 15 , wherein the resistivity is about 0.010 ohm-cm and less.
20 . The p-type SiC wafer of claim 15 , wherein the resistivity is about 0.01 ohm-cm to about 0.001 ohm-cm.
21 . The p-type SiC wafer of claim 15 , wherein the resistivity is from about 0.009 ohm-cm to about 0.004 ohm-cm.
22 . The p-type wafer of claim 15 , wherein the acceptor atoms comprise, aluminum, boron, or a combination of aluminum and boron.
23 . The p-type wafer of claim 15 , wherein the wafer has an N A of at least 10 18 /cm 3 .
24 . The p-type wafer of claim 15 , wherein the wafer has an N A from 10 18 /cm 3 to about 10 20 /cm 3 .
25 . The p-type wafer of claim 15 , wherein the wafer has an N A from 10 18 /cm 3 to about 10 21 /cm 3 .
26 . The p-type wafer of claim 15 , further having an orientation of <0001>+/−0.5 degrees.
27 . The p-type wafer of claim 15 , further having a bow of <40 μm.
28 . (canceled)
29 . (canceled)
30 . (canceled)
31 . The p-type wafer of claim 15 , further having a MPD (micropipes) of <0.2 cm −2 .
32 . The p-type wafer of claim 15 , further having a TSD (threading screw density) of <500 cm −2 .
33 . (canceled)
34 . A low resistivity n-type SiC wafer having a diameter from about 4″ (100 mm) to about 6″ (150 mm); a thickness from about 300 μm to about 600 μm; donor atoms; and a resistivity of 0.03 ohm-cm and less.
35 . The n-type SiC wafer of claim 34 , wherein the resistivity is from 0.01 ohm-cm to about 0.004 ohm-cm.
36 . The n-type SiC wafer of claim 34 , wherein the resistivity is about 0.010 ohm-cm and less.
37 . The n-type SiC wafer of claim 34 , wherein the resistivity is about 0.09 ohm-cm to about 0.002 ohm-cm.
38 . The n-type SiC wafer of claim 34 , wherein the resistivity is from about 0.009 ohm-cm to about 0.004 ohm-cm.
39 . The n-type wafer of claim 34 , wherein the donor atoms comprise, phosphorous, nitrogen or a combination of phosphorous and nitrogen.
40 . The n-type wafer of claim 34 , wherein the substitutional donor atoms consist essentially of phosphorous.
41 . The n-type wafer of claim 34 , wherein the wafer has an No of at least 10 18 /cm 3 .
42 . The n-type wafer of claim 34 , wherein the wafer has an No of at least about 10 19 /cm 3 .
43 . (canceled)
44 . (canceled)
45 . (canceled)
46 . (canceled)
47 . (canceled)
48 . (canceled)
49 . (canceled)
50 . (canceled)
51 . (canceled)
52 . (canceled)
53 . (canceled)
54 . A p-type SiC wafer having a thickness from about 300 μm to about 600 μm; acceptor atoms; a bow of <40 μm; a warp of <60 μm; and a resistivity of from 2.0 ohm-cm to about 0.004 ohm-cm.
55 . The p-type wafer of claim 54 , further having a polytype selected from the group consisting of 4H and 6H.
56 . The p-type wafer of claim 54 , wherein the substitutional acceptor atoms comprise, aluminum, boron, or a combination of aluminum and boron.
57 . The p-type wafer of claim 54 , wherein the substitutional acceptor atoms consist essentially of aluminum, boron, or a combination of aluminum and boron.
58 . The p-type wafer of claim 54 , wherein the wafer has an N A of at least 10 18 /cm 3 .
59 . The p-type wafer of claim 54 , wherein the wafer has an N A from 10 18 /cm 3 to 10 22 /cm 3 .
60 . (canceled)
61 . (canceled)
62 . A low resistivity n-type SiC wafer having a thickness from about 300 μm to about 600 μm; donor atoms comprising phosphorous; a bow of <40 μm; a warp of <60 μm; and a resistivity of 0.03 ohm-cm and less.
63 . The n-type wafer of claim 62 , further having a polytype selected from the group consisting of 4H and 6H.
64 . The n-type wafer of claim 62 , wherein the substitutional donor atoms consist essentially of phosphorous.
65 . The n-type wafer of claim 62 , wherein the substitutional donor atoms consist of phosphorous.
66 - 92 . (canceled)