Semiconductor device
According to one embodiment, a semiconductor device includes a gate electrode, a first insulating layer covering the gate electrode, an oxide semiconductor provided on the first insulating layer immediately above the gate electrode, a source electrode in contact with the oxide semiconductor, and a drain electrode in contact with the oxide semiconductor. Each of the source electrode and the drain electrode includes an oxide conductive layer in contact with the oxide semiconductor, a first metal layer stacked on the oxide conductive layer, a second metal layer formed of a different material from the first metal layer and stacked on the first metal layer, and a third metal layer formed of a same material as the first metal layer and stacked on the second metal layer.
1. A semiconductor device comprising:
an insulating substrate;
a gate electrode provided on the insulating substrate;
a first insulating layer covering the gate electrode;
an oxide semiconductor provided on the first insulating layer immediately above the gate electrode;
a source electrode in contact with the oxide semiconductor; and
a drain electrode in contact with the oxide semiconductor, wherein
each of the source electrode and the drain electrode comprises:
an oxide conductive layer in contact with the oxide semiconductor;
a first metal layer stacked on the oxide conductive layer;
a second metal layer formed of a different material from the first metal layer, and stacked on the first metal layer; and
a third metal layer formed of a same material as the first metal layer, and stacked on the second metal layer, and
a first side surface of the oxide conductive layer is located on an external side relative to a second side surface of the first metal layer, and
a tilt of the first side surface is less than a tilt of the second side surface.
2. The semiconductor device of claim 1 , wherein
the oxide conductive layer is formed of indium tin oxide or indium zinc oxide.
3. The semiconductor device of claim 1 , wherein
the first metal layer and the third metal layer are formed of a material containing molybdenum (Mo), and
the second metal layer is formed of a material containing aluminum (Al).
4. The semiconductor device of claim 1 , further comprising a passivation film covering the source electrode and the drain electrode, wherein
the oxide conductive layer is in contact with the first insulating layer and the oxide semiconductor, and
the passivation film is in contact with the oxide semiconductor between the source electrode and the drain electrode.
5. A semiconductor device comprising:
an insulating substrate;
a gate electrode provided on the insulating substrate;
a first insulating layer covering the gate electrode;
an oxide semiconductor provided on the first insulating layer immediately above the gate electrode;
a source electrode in contact with the oxide semiconductor;
a drain electrode in contact with the oxide semiconductor;
a second insulating layer covering the oxide semiconductor; and
a passivation film covering the source electrode and the drain electrode, wherein
each of the source electrode and the drain electrode comprises:
an oxide conductive layer in contact with the oxide semiconductor;
a first metal layer stacked on the oxide conductive layer;
a second metal layer formed of a different material from the first metal layer, and stacked on the first metal layer; and
a third metal layer formed of a same material as the first metal layer, and stacked on the second metal layer, and
the oxide conductive layer is in contact with the second insulating layer, and is in contact with the oxide semiconductor in a through-hole of the second insulating layer, and
the passivation film is in contact with the second insulating layer between the source electrode and the drain electrode.
6. A semiconductor device comprising:
an insulating substrate;
a gate electrode provided on the insulating substrate;
a first insulating layer covering the gate electrode;
an oxide semiconductor provided on the first insulating layer immediately above the gate electrode;
a source electrode in contact with the oxide semiconductor;
a drain electrode in contact with the oxide semiconductor;
a passivation film covering the source electrode and the drain electrode; and
a top gate electrode provided on the passivation film and electrically connected to the gate electrode immediately above the gate electrode, wherein
each of the gate electrode, the source electrode, the drain electrode and the top gate electrode comprises:
a first metal layer containing molybdenum (Mo);
a second metal layer containing aluminum (Al) and stacked on the first metal layer; and
a third metal layer containing molybdenum (Mo) and stacked on the second metal layer.
7. The semiconductor device of claim 6 , wherein
each of the source electrode and the drain electrode comprises, as an underlayer of the first metal layer, an oxide conductive layer in contact with the oxide semiconductor.
8. The semiconductor device of claim 6 , further comprising a second insulating layer covering the oxide semiconductor, wherein
the passivation film is in contact with the second insulating layer between the source electrode and the drain electrode.
9. The semiconductor device of claim 6 , wherein
the passivation film is in contact with the oxide semiconductor between the source electrode and the drain electrode.