Optoelectronic semiconductor chip

1. An optoelectronic semiconductor chip comprising:

a semiconductor layer sequence having an active zone for generating radiation with a wavelength of maximum intensity L; and

a mirror for the radiation on a rear side opposite a light extraction side, wherein

the mirror comprises a cover layer located closest to the semiconductor layer sequence,

the cover layer is formed with a material transparent to the radiation and has an optical thickness between 0.5 L and 3 L inclusive,

the cover layer is followed by between inclusive 2 and inclusive 10 intermediate layers in a direction away from the semiconductor layer sequence,

the intermediate layers have alternately high and low refractive indices for the radiation and are each made of a material transparent to the radiation,

the intermediate layers are followed in the direction away from the semiconductor layer sequence by at least one metal layer as a reflection layer,

the mirror is located on a p-doped side of the semiconductor layer sequence, and

a plurality of electrical connections extend through the mirror for electrically contacting the p-doped side.

2. The optoelectronic semiconductor chip according to claim 1 , wherein a thickness of at least one of the intermediate layers is unequal to L/4.

3. The optoelectronic semiconductor chip according to claim 1 , wherein at least 50% of the intermediate layers have an optical thickness of L/3, with a tolerance of not more than L/15.

4. The optoelectronic semiconductor chip according to claim 1 , wherein

the mirror comprises three or four of the intermediate layers and

the intermediate layers each have an optical thickness of L/3, with a tolerance of at most L/20.

5. The optoelectronic semiconductor chip according to claim 1 , wherein the mirror comprises at most two intermediate layers with an optical thickness of (L/4+N/2)+/−L/20, wherein N is a natural number greater than or equal to zero.

6. The optoelectronic semiconductor chip according to claim 1 , wherein the cover layer has an optical thickness between 1.1 L and 1.6 L, inclusive.

7. The optoelectronic semiconductor chip according to claim 1 , wherein high refractive index layers each have an optical thickness between 0.3 L and 0.4 L, inclusive and an intermediate low refractive index layer has an optical thickness between 0.26 L and 0.35 L, inclusive.

8. The optoelectronic semiconductor chip according to claim 1 ,

wherein an optical thickness of at least three of the intermediate layers increases in a direction away from the cover layer, and

wherein a difference in optical thickness between adjacent ones of the intermediate layers is between 0.03 L and 0.15 L, inclusive.

9. The optoelectronic semiconductor chip according to claim 1 ,

wherein the cover layer is of SiO 2 and/or the intermediate layers are alternately of Nb 2 O 5 and SiO 2 , and

wherein the metal layer is of gold, silver or aluminum.

10. The optoelectronic semiconductor chip according to claim 1 , wherein the semiconductor layer sequence is based on AlInGaAs or on InGaAlP and/or the wavelength of maximum intensity L is between 570 nm and 950 nm inclusive.

11. The optoelectronic semiconductor chip according to claim 1 , wherein the cover layer is followed three or four intermediate layers in a direction away from the semiconductor layer sequence.