Shingled solar cell module
A high efficiency configuration for a solar cell module comprises solar cells conductively bonded to each other in a shingled manner to form super cells, which may be arranged to efficiently use the area of the solar module, reduce series resistance, and increase module efficiency.
1. A solar panel comprising:
a plurality of super cells, each super cell comprising a plurality of solar cells arranged in line with end portions of adjacent solar cells overlapping in a shingled manner and conductively bonded to each other to electrically connect the solar cells in series,
each solar cell comprising:
a monocrystalline silicon base having a front surface, a rear surface, and sidewalls substantially perpendicular to the front surface, the sidewalls connecting the front and rear surfaces, at least one sidewall of the monocrystalline silicon base partially coated with a first transparent conductive oxide (TCO) which passivates the coated portion of the sidewall;
a first amorphous silicon layer having a front surface, a rear surface, and sidewalls connecting the front and rear surfaces, the rear surface of the first amorphous silicon layer in contact with the front surface of the monocrystalline silicon base, at least one sidewall of the first amorphous silicon layer coated with the first TCO which passivates the coated sidewall;
a front TCO layer comprising the first TCO, the front TCO layer deposited on the front surface of the first amorphous silicon layer;
a second amorphous silicon layer deposited on the rear surface of the monocrystalline silicon base;
a rear TCO layer comprising a second TCO, the rear TCO layer deposited on the second amorphous silicon layer; and
conductive grid lines on the front and rear TCO layers.
2. The solar panel of claim 1 , wherein the monocrystalline silicon base is a n-type monocrystalline silicon base.
3. The solar panel of claim 1 , wherein the first amorphous silicon layer comprises an intrinsic amorphous silicon layer and a n+ doped amorphous silicon layer.
4. The solar panel of claim 3 , wherein the intrinsic amorphous silicon layer and the n+ doped amorphous silicon layer are each about 5 nm thick.
5. The solar panel of claim 1 , wherein the second amorphous silicon layer comprises an intrinsic amorphous silicon layer and a p+ doped amorphous silicon layer.
6. The solar panel of claim 5 , wherein the intrinsic amorphous silicon layer and the p+ doped amorphous silicon layer are each about 5 nm thick.
7. The solar panel of claim 1 , wherein the front TCO layer is about 65 nm thick.
8. The solar panel of claim 1 , wherein the monocrystalline silicon wafer has a thickness less than 180 microns.
9. The solar panel of claim 1 , wherein the first TCO partially coats and passivates two sidewalls of the monocrystalline silicon base.
10. The solar panel of claim 1 , wherein the first TCO coats and passivates two sidewalls of the first amorphous silicon layer.
11. The solar panel of claim 1 , wherein the front TCO layer functions as an antireflection coating.
12. A solar panel comprising:
a plurality of super cells, each super cell comprising a plurality of solar cells arranged in line with end portions of adjacent solar cells overlapping in a shingled manner and conductively bonded to each other to electrically connect the solar cells in series,
each solar cell comprising:
a n-type monocrystalline silicon base having a front surface, a rear surface, and sidewalls substantially perpendicular to the front surface, the sidewalls connecting the front and rear surfaces, at least one sidewall of the monocrystalline silicon base partially coated with a first transparent conductive oxide (TCO) which passivates the coated portion of the sidewall;
a first amorphous silicon layer comprising an intrinsic amorphous silicon layer and a n+ doped amorphous silicon layer, the first amorphous silicon layer having a front surface, a rear surface, and sidewalls connecting the front and rear surfaces, the rear surface of the first amorphous silicon layer in contact with the front surface of the n-type monocrystalline silicon base, at least one sidewall of the first amorphous silicon layer coated with the first TCO which passivates the coated sidewall;
a front TCO layer comprising the first TCO, the front TCO layer deposited on the front surface of the first amorphous silicon layer;
a second amorphous silicon layer comprises an intrinsic amorphous silicon layer and a p+ doped amorphous silicon layer, the second amorphous silicon layer deposited on the rear surface of the n-type monocrystalline silicon base;
a rear TCO layer comprising a second TCO, the rear TCO layer deposited on the second amorphous silicon layer; and
conductive grid lines on the front and rear TCO layers.
13. The solar panel of claim 12 , wherein the intrinsic amorphous silicon layers are each about 5 nm thick.
14. The solar panel of claim 12 , wherein the n+ doped amorphous silicon layer is about 5 nm thick.
15. The solar panel of claim 12 , wherein the p+ doped amorphous silicon layer is about 5 nm thick.
16. The solar panel of claim 12 , wherein the monocrystalline silicon wafer has a thickness less than 180 microns.
17. The solar panel of claim 12 , wherein the front TCO layer is about 65 nm thick.
18. The solar panel of claim 12 , wherein the first TCO partially coats and passivates two sidewalls of the monocrystalline silicon base.
19. The solar panel of claim 12 , wherein the first TCO coats and passivates two sidewalls of the first amorphous silicon layer.
20. The solar panel of claim 12 , wherein the front TCO layer functions as an antireflection coating.