Electromagnetic wave attenuator and electronic device
According to one embodiment, an electromagnetic wave attenuator includes a stacked member. The stacked member includes a base body including a first surface including unevenness, a first conductive member including Cu, and a first layer provided between the first surface and the first conductive member. The first layer includes Cr and Ti.
1 . An electromagnetic wave attenuator, comprising:
a stacked member, the stacked member including
a base body including a first surface including unevenness,
a first conductive member including Cu, and
a first layer provided between the first surface and the first conductive member, the first layer including Cr and Ti,
wherein
a height of the unevenness is larger than a thickness of the first layer,
the stacked member further includes a second layer including Cr and Ti,
the first conductive member is between the first layer and the second layer,
the base body includes a plurality of particles and a resin around the particles,
the unevenness is formed to be along the plurality of particles,
a thickness of the first conductive member is not less than 0.5 μm and not more than 100 μm,
the first conductive member includes a first stacked body,
the first stacked body includes a plurality of first magnetic layers and a plurality of first non-magnetic layers, the plurality of first non-magnetic layers including Cu,
one of the first magnetic layers is between one of the first non-magnetic layers and an other one of the first non-magnetic layers,
the one of the first magnetic layers includes a first magnetic layer surface facing the one of the first non-magnetic layers,
the first magnetic layer surface includes a first top portion, a second top portion, and a first bottom portion,
a position of the first bottom portion in a crossing direction is between a position of the first top portion in the crossing direction and a position of the second top portion in the crossing direction, the crossing direction crossing a direction from the one of the first non-magnetic layer to the other one of the first non-magnetic layers, and
at least a part of the one of the first non-magnetic layers is between the first top portion and the second top portion in the crossing direction.
2 . The attenuator according to claim 1 , wherein
the plurality of particles include a first element and oxygen, the first element including at least one selected from the group consisting of silicon and aluminum.
3 . The attenuator according to claim 1 , wherein
the plurality of particles include silicon oxide.
4 . The attenuator according to claim 1 , wherein
a diameter of at least one of the particles is not less than 1 nm and not more than 100 μm.
5 . The attenuator according to claim 1 , wherein
the resin includes at least one selected from the group consisting of epoxy and polyimide.
6 . The attenuator according to claim 1 , wherein
the height is not less than 1 μm or more and not more than 100 μm.
7 . The attenuator according to claim 1 , wherein
a thickness of the first layer is not less than 1 nm and not more than 30 nm.
8 . The attenuator according to claim 1 , wherein
a thickness of the second layer is not less than 1 nm and not more than 30 nm.
9 . The attenuator according to claim 1 , wherein
the one of the first non-magnetic layers is in contact with the one of the first magnetic layers and the other one of the first magnetic layers.
10 . The attenuator according to claim 1 , wherein
the plurality of first magnetic layers include at least one selected from the group consisting of Fe, Ni and Co.
11 . The attenuator according to claim 10 , wherein
the plurality of first magnetic layers include at least one selected from the group consisting of Cu, Mo and Cr.
12 . The attenuator according to claim 1 , wherein
the first conductive member further includes a second stacked body,
the second stacked body includes a plurality of second magnetic layers and a plurality of second non-magnetic layers,
one of the second magnetic layers is between one of the second non-magnetic layers and an other one of the second non-magnetic layers, and
the plurality of second non-magnetic layers include at least one selected from the group consisting of Ta, Ti, W, Mo, Nb, and Hf.
13 . The attenuator according to claim 12 , wherein
at least one of the second non-magnetic layers further includes at least one selected from the group consisting of Cu, Al, Ni, Cr, Mn, Mo, Zr, and Si.
14 . The attenuator according to claim 1 , wherein
the stacked member includes a first planar portion and a first side surface portion,
in the first planar portion, a direction from the base body to the first conductive member is along a first direction,
in the first side surface portion, a direction from the base body to the first conductive member is along a second direction, and
the second direction crosses the first direction.
15 . An electronic device, comprising:
the attenuator according to claim 1 ; and
an electronic element.