IP Library Granted Patent US 11,758,629
Granted Patent B2
US 11,758,629 · App. 17/879,123 · Granted Sep 12, 2023

Load drive device

Inventors: Masaaki Nakayama (Kyoto, JP); Krishnachandran Krishnan Nair (Kyoto, JP); Mathew George (Kyoto, JP)
Assignee: Rohm Co., Ltd.
H05B45/30B60Q1/04B60Q1/34H01L33/00H02M3/156H05B47/10G05F1/56H02M1/0032
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Quick Facts
Patent No.
US 11,758,629
App. No.
17/879,123
Granted
Sep 12, 2023
Kind
B2
Abstract

Provided is a load drive device comprising: a first input terminal for accepting an input of a first input current from a power source; a second input terminal for accepting an input of a second input current from the power source via an external resistor; an output terminal for outputting an output current to a load; a current distribution unit for summing the first input current and second input current at a prescribed distribution ratio and generating the output current and a control unit for controlling the distribution ratio. As one example, it would be appropriate for the control unit to control the distribution ratio according to the difference between a first terminal voltage present in the second input terminal and a second terminal voltage present in the output terminal.

Claims (65)

1. A semiconductor device comprising:

a first voltage side terminal connected to an external first voltage,

a second voltage side terminal connected to an external second voltage different from the external first voltage,

a current driver configured to perform current control of an output current between the first voltage side terminal and the second voltage side terminal,

a current distributor configured to distribute the output current to a first path to the first voltage side terminal and to an internal bypass path that branches from the first path, and

a bypass terminal to which the internal bypass path is connected and is arranged to be connected by one terminal of an external resistor which is arranged to be connected between the external first voltage and the external second voltage.

2. The semiconductor device according to claim 1 , wherein the external first voltage is a power source.

3. The semiconductor device according to claim 2 , wherein the first voltage side terminal is arranged to be directly connected to the power source.

4. The semiconductor device according to claim 2 , wherein the first voltage side terminal is arranged to be connected to another terminal of the external resistor.

5. The semiconductor device according to claim 2 , wherein the second voltage side terminal is arranged to be connected to an external load.

6. The semiconductor device according to claim 1 , wherein the current distributor is configured to distribute the output current to the first path and the internal bypass path such that a sum of a current to the first path and a current to the internal bypass path is equal to the output current.

7. The semiconductor device according to claim 1 , wherein the current distributor includes:

a first transistor in the first path, and

the semiconductor device further includes a controller configured to control the first transistor.

8. The semiconductor device according to claim 7 , wherein the current distributor further includes:

a second transistor in the internal bypass path, and

the controller configured to control the second transistor.

9. The semiconductor device according to claim 8 , wherein the controller includes:

a bypass terminal voltage detector configured to generate a first differential input voltage from voltage at the bypass terminal,

a second terminal voltage detector configured to generate a second differential input voltage from the voltage at the second voltage side terminal, and

a differential amplifier configured to generate a control signal for the current distributor according to a difference value between the first differential input voltage and the second differential input voltage.

10. The semiconductor device according to claim 1 , wherein the current driver is configured to perform constant current control of the output current.

11. The semiconductor device according to claim 1 , wherein, in a plan view of a semiconductor device,

the first voltage side terminal is arranged on a first side of the semiconductor device, and

the second voltage side terminal is arranged on a second side of the semiconductor device opposite to the first side of the semiconductor device.

12. The semiconductor device according to claim 11 , wherein the bypass terminal is on another side adjacent to the first voltage side terminal on the first side of the semiconductor device.

13. The semiconductor device according to claim 11 ,

wherein the current driver and the current distributor are integrated in a semiconductor chip of the semiconductor device, and

wherein, in a plan view of the semiconductor chip,

the current distributor is arranged on a first side of the semiconductor chip which is close to the first side of the semiconductor device, and

the current driver is arranged on a second side of the semiconductor chip which is close to the second side of the semiconductor device.

14. A semiconductor device comprising:

a first voltage side terminal arranged to be connected to an external first voltage,

a second voltage side terminal arranged to be connected to an external second voltage different from the external first voltage,

a bypass terminal adjacent to the first voltage side terminal and arranged to be connected to one terminal of an external resistor which is arranged to be connected to the external first voltage at another terminal of the external resistor,

a current driver configured to perform current control of an output current between the first voltage side terminal and the second voltage side terminal, and

a current distributor configured to distribute the output current of the current driver to a first current to the first voltage side terminal and a bypass current to the bypass terminal on a side of the first voltage side terminal of the output current with respect to the current driver.

15. The semiconductor device according to claim 14 , wherein the external first voltage is a power source.

16. The semiconductor device according to claim 15 , wherein the first voltage side terminal is arranged to be directly connected to the power source.

17. The semiconductor device according to claim 16 , wherein the second voltage side terminal is arranged to be connected to an external load.

18. The semiconductor device according to claim 14 , wherein the current distributor includes:

a first transistor in a path which is configured to flow the first current, and

the semiconductor device further includes a controller configured to control the first transistor.

19. The semiconductor device according to claim 18 , wherein the current distributor further includes a second transistor in a path which is configured to flow the bypass current, and wherein the controller also configured to control the second transistor.

20. The semiconductor device according to claim 19 , wherein the controller includes:

a first input detector configured to generate a first differential input voltage from the external first voltage,

a bypass input detector configured to generate a second differential input voltage from a voltage of the bypass terminal, and

a differential amplifier configured to generate a control signal for the current distributor according to a difference value between the first differential input voltage and the second differential input voltage.

21. The semiconductor device according to claim 14 , wherein, in a plan view of a semiconductor device,

the first voltage side terminal is arranged on a first side of the semiconductor device, and

the second voltage side terminal is arranged on a second side of the semiconductor device opposite to the first side of the semiconductor device.

22. The semiconductor device according to claim 21 , wherein the bypass terminal is arranged on the first side of the semiconductor device.

23. The semiconductor device according to claim 21 ,

wherein the current driver and the current distributor are integrated in a semiconductor chip of the semiconductor device, and

wherein, in a plan view of the semiconductor chip,

the current distributor is arranged on a first side of the semiconductor chip, and

the current driver is arranged on a second side of the semiconductor chip which is opposite to the first side of the semiconductor chip.

24. An electronic module comprising:

a semiconductor device on a module, board,

an external resistor with one terminal connected to a first terminal of the semiconductor device,

wherein the first terminal of the semiconductor device is connected to an external first voltage, and a second terminal of the semiconductor device is connected to an external second voltage different from the external first voltage, and

wherein the semiconductor device includes:

a current driver configured to perform current control of an output current between the first terminal and the second terminal,

a current distributor configured to distribute the output current to a first path to the first terminal and to an internal bypass path that branches from the first path, and

a bypass terminal to which the internal bypass path is connected and arranged to be connected by another terminal of the external resistor.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 3, 2022
From: NAKAYAMA, MASAAKI; NAIR, KRISHNACHANDRAN KRISHNAN; GEORGE, MATHEW
To: ROHM CO., LTD.
Reel/Frame 060707/0324 →
Priority Claims (1)
JP 2017130768 · Jul 4, 2017 · national
Continuity (2)
Continuation 16628136
Related Publication 20220394830A1 · Dec 8, 2022
Cited By (1)
US 12,432,829