Detection device
According to an aspect, a detection device includes: a substrate; a plurality of transistors provided on the substrate; a plurality of scan lines that extend in a first direction; a plurality of signal lines that extend in a second direction intersecting the first direction; a plurality of photodiodes that are provided in an area surrounded by the scan lines and the signal lines and each include a p-type semiconductor layer, an i-type semiconductor layer, and an n-type semiconductor layer; and a shield wiring line that extends in the first direction and overlaps a corresponding one of the scan lines. The shield wiring line is electrically coupled to, among the signal lines, a power supply signal line configured to supply a power supply potential to the transistors.
1. A detection device comprising:
a substrate;
a plurality of transistors provided on the substrate;
a plurality of scan lines that extend in a first direction;
a plurality of signal lines that extend in a second direction intersecting the first direction;
a plurality of photodiodes that are provided in an area surrounded by the scan lines and the signal lines and each include a p-type semiconductor layer, an i-type semiconductor layer, and an n-type semiconductor layer; and
a shield wiring line that extends in the first direction and overlaps a corresponding one of the scan lines, wherein
the shield wiring line is electrically coupled to, among the signal lines, a power supply signal line configured to supply a power supply potential to the transistors.
2. The detection device according to claim 1 , wherein the shield wiring line is provided in the same layer as that of the signal lines.
3. The detection device according to claim 1 , wherein
the signal lines include a reset signal line configured to supply a reset signal to the photodiodes,
the shield wiring line includes a first shield wiring line and a second shield wiring line,
the first shield wiring line is coupled to the power supply signal line and extends in a direction intersecting the power supply signal line, and
the second shield wiring line is coupled to the reset signal line and extends in a direction intersecting the reset signal line.
4. The detection device according to claim 3 , wherein
the signal lines include an output signal line configured to output a signal from the photodiodes, and
the output signal line is provided between the first shield wiring line and the second shield wiring line in the first direction while being separate from the first shield wiring line and the second shield wiring line.
5. The detection device according to claim 1 , wherein the shield wiring line is formed of a metal layer provided between a layer of the scan lines and a layer of the signal lines.
6. The detection device according to claim 5 , further comprising an insulating film provided between the shield wiring line and the power supply signal line, wherein
the shield wiring line is electrically coupled to the power supply signal line through a contact hole provided in the insulating film.
7. The detection device according to claim 5 , wherein the shield wiring line extends in the first direction, overlaps the corresponding one of the scan lines in a plan view, and intersects the signal lines.
8. The detection device according to claim 1 , wherein
the shield wiring line has a greater width in the second direction than that of the scan lines and has a recess in a width direction adjacent to the photodiodes in a plan view.
9. The detection device according to claim 1 , wherein
the signal lines include output signal lines configured to output signals from the photodiodes,
the detection device comprises a signal line selection circuit, and
the signal line selection circuit comprises a plurality of switch elements corresponding to the output signal lines and is configured to switch coupling between the output signal lines and a detection circuit using the switch elements.
10. The detection device according to claim 1 , wherein each of the photodiodes comprises:
a plurality of first regions in which the p-type semiconductor layer, the i-type semiconductor layer, and the n-type semiconductor layer are stacked directly and are in contact with one another; and
a second region in which at least the p-type semiconductor layer and the i-type semiconductor layer are stacked and are separate from each other, and
the first regions adjacent to each other are coupled together at least through the p-type semiconductor layer.
11. The detection device according to claim 10 , wherein the p-type semiconductor layer is provided in the same layer as semiconductor layers of the transistors.
12. The detection device according to claim 10 , wherein the first regions are arranged in a triangular lattice pattern in a plan view when viewed from a direction orthogonal to the substrate.
13. A detection device comprising:
a substrate;
a plurality of transistors provided on the substrate;
a plurality of scan lines that extend in a first direction;
a power supply signal line that extends in a second direction intersecting the first direction and that is configured to supply a power supply potential to the plurality of transistors;
a plurality of photodiodes that are provided in an area, between two of the plurality of scan lines, the two being adjacent to each other, and each include a p-type semiconductor layer, an i-type semiconductor layer, and an n-type semiconductor layer; and
a shield wiring line that extends in the first direction so as to overlap a corresponding one of the scan lines and is configured to be supplied with the power supply potential.
14. The detection device according to claim 13 , wherein the shield wiring line is coupled to the power supply signal line.